PRELIMINARY
HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
.eatures:
x x x
IDT70T9359/49L
x
x
x x
True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial:7.5/9/12ns (max.) – Industrial: 9ns (max.) Low-power operation – IDT70T9359/49L Active: 225mW (typ.) Standby: 1.5mW (typ.) Flow-Through or Pipelined output mode on either port via the FT/PIPE pins Counter enable and reset features Dual chip enables allow for depth expansion without additional logic
x
x x
x
Full synchronous operation on both ports – 4.0ns setup to clock and 0.5ns hold on all control, data, and address inputs – Data input, address, and control registers – Fast 7.5ns clock to data out in the Pipelined output mode – Self-timed write allows fast cycle time – 12ns cycle time, 83MHz operation in Pipelined output mode Separate upper-byte and lower-byte controls for multiplexed bus and bus matching compatibility LVTTL- compatible, single 2.5V (±100mV) power supply Industrial temperature range (–40°C to +85°C) is available for 66MHz Available in a 100-pin Thin Quad Flatpack (TQFP) and 100pin fine pitch Ball Grid Array (fpBGA) packages.
.unctional Block Diagram
R/WL
UBL CE0L
R/WR
UBR CE0R
CE1L
LBL OEL
1 0 0/1
1 0 0/1
CE1R
LBR OER
FT/PIPEL
0/1
1b 0b
ba
1a 0a
0a 1a
a
b
0b 1b
0/1
FT/PIPER
I/O9L-I/O17L I/O0L-I/O8L
I/O Control
I/O9R-I/O17R I/O Control I/O0R-I/O8R
A12L(1) A0L CLKL Counter/ Address Reg. MEMORY ARRAY Counter/ Address Reg.
A12R(1) A0R CLKR
ADSL CNTENL CNTRSTL
ADSR CNTENR CNTRSTR
5640 drw 01
NOTE: 1. A 12 is a NC for IDT70T9349.
JULY 2002
1
©2002 Integrated Device Technology, Inc. DSC-5640/1
IDT70T9359/49L High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Description:
The IDT70T9359/49 is a high-speed 8/4K x 18 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times. With an input data register, the IDT70T9359/49 has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT’s CMOS high-performance technology, these devices typically operate on only 225mW of power.
Pin Configurations (1,2,3,4)
06/07/02
Index
A9L A10L A11L A12L(1) NC NC NC LBL UBL CE0L CE1L CNTRSTL R/WL OEL VDD FT/PIPEL I/O17L I/O16L VSS I/O15L I/O14L I/O13L I/O12L I/O11L I/O10L
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 2 74 3 73 1 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 72 71 70 69 68
A8L A7L A6L A5L A4L A3L A2L A1L A0L CNTENL CLKL ADSL VSS VSS ADSR CLKR CNTENR A0R A1R A2R A3R A4R A5R A6R A7R
70T9359/49PF PN100-1(5) 100-Pin TQFP Top View(6)
67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A8R A9R A10R A11R A12R(1) NC NC NC LBR UBR CE0R CE1R CNTRSTR R/WR VSS OER FT/PIPER I/O17R VSS I/O16R I/O15R I/O14R I/O13R I/O12R I/O11R
5640 drw 02
NOTES: 1. A12 is a NC for IDT70T9349. 2. All VDD pins must be connected to power supply. 3. All VSS pins must be connected to ground supply. 4. Package body is approximately 14mm x 14mm x 1.4mm. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking.
I/O9L I/O8L VDD I/O7L I/O6L I/O5L I/O4L I/O3L I/O2L VSS I/O1L I/O0L VSS I/O0R I/O1R I/O2R I/O3R I/O4R I/O5R I/O6R VDD I/O7R I/O8R I/O9R I/O10R
.
6.42 2
IDT70T9359/49L High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Pin Configurations (con't.)(1,2,3,4)
70T9359/49BF BF100(5) 100-Pin fpBGA Top View(6)
A2 A3 A4
CNTRSTR
0 6/07/02 A1
A5
A6
A7
A8
A9
A10
A8R
B1
A11R
B2
UB R
B3
Vss
B5
Vss
B6 B7
Vss
I/O13R I/O10R I/O17R
B8 B9 B10
B4
A6R
C1
A7R
C2
A 10R A 12R(1) R/W R
C3 C4 C5
OE R PL/FTR I/O12R I/O9R I/O6R
C6 C7 C8 C9 C10
A 3R
D1
A4R
D2
A 5R
D3
A9R
D4
CE 1R I/O16R I/O15R I/O11R I/O7R I/O3R
D5 D6 D7 D8 D9 D10
A0R
E1
CLKR
E2
A 1R
E3 CNTENR F3
A 2R
E4
LB R
E5
CE 0R I/O14R I/O8R
E6 E7 E8
I/O5R I/O1R
E9 E10
Vss
F1
ADS R
F2
A1L
F4
ADSL
F5
Vss
F6
I/O4R
F7
I/O2R
F8
I/O0R
F9
VDD
F10
Vss
G1 CNTENL H1
CLKL
G2
A0L
G3
A 3L
G4
V DD
G5
Vss
G6
V DD
G7
I/O2L
G8
I/O1L
G9
I/O0L
G10
A4L
H2
A 7L
H3
UBL
H4 H5
Vss
I/O13L
H6
NC
H7
I/O4L
H8
Vss
H9
I/O3L
H10
,
A2L
J1
A6L
J2
A11L
J3
CE 0L
J4
CNTRST L
I/O15L I/O9L
J6 J7
I/O7L
J8
I/O6L
J9
I/O5L
J10
J5
A 5L
K1
A9L
K2
A 12L(1) R/WL
K3 K4
OEL PL/FTL I/O12L I/O10L
K5 K6 K7 K8
Vss
K9
I/O8L
K10
A 8L
A 10L
LBL
CE1L
V DD
VDD
I/O16L I/O14L I/O11L I/O17L
5 640 drw 03
NOTES: 1. A 12 is a NC for IDT70T9349. 2. All V DD pins must be connected to power supply. 3. All V SS pins must be connected to ground supply. 4. Package body is approximately 10mm x 10mm x 1.4mm with 0.8mm ball pitch. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking.
6.42 3
IDT70T9359/49L High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Pin Names
Left Port CE0L, CE1L R/WL OEL A0L - A12L
(1)
Right Port CE0R, CE1R R/WR OER A0R - A12R
(1)
Names Chip Enables (3) Read/Write Enable Output Enable Address Data Input/Output Clock Upper Byte Select(2) Lower Byte Select(2) Address Strobe Enable Counter Enable Counter Reset Flow-Through / Pipeline Power (2.5V) Ground (0V)
5640 tbl 01
I/O0L - I/O17L CLKL UBL LBL ADSL CNTENL CNTRSTL FT/PIPEL
I/O0R - I/O17R CLKR UBR LBR ADSR CNTENR CNTRSTR FT/PIPER VDD Vss
NOTES: 1. A12 is a NC for IDT70T9349. 2. LB and UB are single buffered regardless of state of FT/PIPE. 3. CEo and CE1 are single buffered when FT/PIPE = VIL, CEo and CE 1 are double buffered when FT/PIPE = VIH, i.e. the signals take two cycles to deselect.
Truth Table IRead/Write and Enable Control(1,2,3)
OE X X X X X X L L L H CLK ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ X CE0(5) H X L L L L L L L L CE1(5) X L H H H H H H H H UB(4) X X H L H L L H L X LB(4) X X H H L L H L L X R/ W X X X L L L H H H X Upper Byte I/O9-17 High-Z High-Z High-Z DATAIN High-Z DATAIN DATAOUT High-Z DATAOUT High-Z Lower Byte I/O0-8 High-Z High-Z High-Z High-Z DATAIN DATAIN High-Z DATAOUT DATAOUT High-Z Deselected –Power Down Deselected –Power Down Both Bytes Deselected Write to Upper Byte Only Write to Lower Byte Only Write to Both Bytes Read Upper Byte Only Read Lower Byte Only Read Both Bytes Outputs Disabled
5640 tbl 02
MODE
NOTES: 1. "H" = VIH, "L" = V IL, "X" = Don't Care. 2. ADS, CNTEN, CNTRST = X. 3. OE is an asynchronous input signal. 4. LB and UB are single buffered regardless of state of FT/PIPE. 5. CEo and CE1 are single buffered when FT/PIPE = V IL. CEo and CE1 are double buffered when FT/PIPE = V IH, i.e. the signals take two cycles to deselect.
6.42 4
IDT70T9359/49L High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Truth Table IIAddress Counter Control(1,2)
External Address An X X X Previous Internal Address X An An + 1 X Internal Address Used An An + 1 An + 1 A0 CLK ↑ ↑ ↑ ↑ ADS L(4) H H X CNTEN X L
(5)
CNTRST H H H L
(4)
I/O (3) DI/O (n) D I/O(n+1) D I/O(n+1) DI/O (0) Exte rnal Ad dre ss Used
MODE
Counte r Enable d — Inte rnal Add re ss ge ne ration E xte rnal Add re ss Blocke d — Counte r d isab le d (An + 1 re used ) Counte r Reset to Ad dress 0
5640 tbl 03
H X
NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. CE0, LB, UB , and OE = VIL; CE 1 and R/W = VIH. 3. Outputs configured in Flow-Through Output mode: if outputs are in Pipelined mode the data out will be delayed by one cycle. 4. ADS and CNTRST are independent of all other signals including CE0, CE1, UB and LB. 5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other signals including CE 0, CE1, UB and LB.
Recommended Operating Temperature and Supply Voltage
Grade Commercial Industrial Ambient Temperature(1) 0OC to +70OC -40OC to +85OC GND 0V 0V VDD 2.5V + 100mV 2.5V + 100mV
5640 tbl 04
Recommended DC Operating Conditions
Symbol VDD VSS VIH VIL Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min. 2.4 0 1.7 -0.3
(1)
Typ. 2.5 0
____
Max. 2.6 0 VDD+0.3V 0.7
(2)
Unit V V V V
5640 tbl 05
NOTES: 1. This is the parameter TA. This is the "instant on" case temperature.
____
NOTES: 1. VIL > -1.5V for pulse width less than 10 ns. 2. VTERM must not exceed VDD +0.3V.
Absolute Maximum Ratings(1)
Symbol VTERM(2) Rating Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature DC Output Current Commercial & Industrial -0.5 to +3.6 Unit V
Capacitance(1)
Symbol CIN COUT
(3)
(TA = +25°C, f = 1.0MHZ)
Parameter Input Capacitance Output Capacitance Conditions(2) VIN = 3dV V OUT = 3dV Max. 9 10 Unit pF pF
5640 tbl 07
TBIAS TSTG IOUT
-55 to +125 -65 to +150 50
o
C C
o
mA
5640 tbl 06
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VDD + 0.3V for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 0.3V.
NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. 3. COUT also references C I/O.
6.42 5
IDT70T9359/49L High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Preliminary Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 2.5V ± 100mV)
70T9359/49L Symbol |ILI| |ILO| VOL VOH Parameter Input Leakage Current(1) Output Leakage Current Output Low Voltage Output High Voltage VDD = 2.6V, VIN = 0V to VDD CE = VIH o r CE1 = VIL, VOUT = 0V to VDD IOL = + 2mA IOH = -2mA Test Conditions Min.
___
Max. 5 5 0.4
___
Unit µA µA V V
5640 tbl 08
___
___
2.0
NOTE: 1. At VDD < 2.0V input leakages are undefined.
DC Electrical Characteristics Over the Operating Temperature Supply Voltage Range(3) (VDD= 2.5V ± 100mV)
70T9359/49L7 Com'l Only Symbol IDD Parameter Dynamic Operating Current (Both Ports Active) Standby Current (Both Ports - TTL Level Inputs) Standby Current (One Port - TTL Level Inputs) Full Standby Current (Both Ports - CMOS Level Inputs) Full Standby Current (One Port - CMOS Level Inputs) Test Condition CEL and CER= VIL, Outputs Disabled, f = fMAX(1) CEL = CER = VIH f = fMAX
(1)
70T9359/49L9 Com'l & Ind Typ. (4) 75 75 20 20 47 47 0.1 0.1 47 47 Max. 175 220 50 70 100 190 3.0 3.0 100 190
70T9359/49L12 Com'l Only Typ. (4) 70
____
Version COM'L IND COM'L IND COM'L IND COM'L IND L L L L L L L L L L
Typ. (4) 80
____
Max. 200
____
Max. 150
____
Unit mA
ISB1
20
____
60
____
20
____
40
____
mA
ISB2
CE"A" = VIL and CE"B" = VIH(5) Active Port Outputs Disabled, f=fMAX(1) Both Ports CEL and CER >V DD - 0.2V, VIN > VDD - 0.2V or VIN < 0.2V, f = 0 (2)
50
____
115
____
45
____
85
____
mA
ISB3
0.1
____
3.0
____
0.1
____
3.0
____
mA
ISB4
COM'L CE"A" < 0.2V and CE"B" > VDD - 0.2V(5) IND VIN > VDD - 0.2V or VIN < 0.2V, Active Port, (1) Outputs Disabled , f = fMAX
50
____
115
____
45
____
85
____
mA
NOTES: 1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC , using "AC TEST CONDITIONS" at input levels of GND to 3V. 2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby. 3. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 4. VDD = 2.5V, TA = 25°C for Typ, and are not production tested. IDD DC(f=0) = 75mA (Typ). 5. CEX = V IL means CE 0X = V IL and CE1X = VIH CEX = VIH means CE0X = VIH or CE1X = VIL CEX < 0.2V means CE0X < 0.2V and CE1X > VDD - 0.2V CEX > VDD - 0.2V means CE0X > VDD - 0.2V or CE1X < 0.2V "X" represents "L" for left port or "R" for right port.
5640 tbl 09
6.42 6
IDT70T9359/49L High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Preliminary Industrial and Commercial Temperature Ranges
AC Test Conditions
Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND to 2.5V 2ns Max. 1.25V 1.25V Figure 1 and 2
5640 tbl 10
50Ω DATAOUT
50Ω 1.25V 10pF / 5pF* (Tester)
,
5640 drw 04
*(For t CKLZ, t CKHZ, t OLZ,
Figure 1. AC Output Test load. and tOHZ).
∆ tCD
(Typical, ns)
∆ Capacitance (pF) from AC Test Load
5640 drw 05
Figure 2. Typical Output Derating (Lumped Capacitive Load).
6.42 7
IDT70T9359/49L High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Preliminary Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing)(3) (VDD = 2.5V ± 100mV, TA = 0°C to +70°C)
70T9359/49L7 Com'l Only Symbol tCYC1 tCYC2 tCH1 tCL1 tCH2 tCL2 tR tF tSA tHA tSC tHC tSB tHB tSW tHW tSD tHD tSAD tHAD tSCN tHCN tSRST tHRST tOE tOLZ tOHZ tCD1 tCD2 tDC tCKHZ tCKLZ Clock Cycle Time (Flow-Through) Clock Cycle Time (Pipelined)(2) Clock High Time (Flow-Through) Clock Low Time (Flow-Through) Clock High Time (Pipelined)(2) Clock Low Time (Pipelined) Clock Rise Time Clock Fall Time Address Setup Time Address Hold Time Chip Enable Setup Time Chip Enable Hold Time Byte Enable Setup Time Byte Enable Hold Time R/ W S etup Time R/ W Hold Time Input Data Setup Time Input Data Hold Time ADS S etup Time ADS Hold Time CNTEN S etup Time CNTEN Hold Time CNTRST S etup Time CNTRST Hold Time Output Enable to Data Valid Output Enable to Output Low-Z
(1) (1) (2) (2) (2)
70T9359/49L9 Com'l & Ind Min. 25 15 12 12 6 6
____
70T9359/49L12 Com'l Only Min. 30 20 12 12 8 8
____
Parameter
Min. 22 12 7.5 7.5 5 5
____
Max.
____ ____
Max.
____ ____
Max.
____ ____
Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
____
____
____
(2)
____
____
____
____
____
____
____
____
____
3 3
____
3 3
____
3 3
____
____
____
____
4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0
____
4 1 4 1 4 1 4 1 4 1 4 1 4 1 4 1
____
4 1 4 1 4 1 4 1 4 1 4 1 4 1 4 1
____
____
____
____
____
____
____
____
____
____
____ ____
____ ____
____ ____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
7.5
____
9
____
12
____
2 1
____
2 1
____
2 1
____
Output Enable to Output High-Z
7 18 7.5
____
7 20 9
____
7 25 12
____
Clock to Data Valid (Flow-Through)(2) Clock to Data Valid (Pipelined)
(2)
____
____
____
Data Output Hold After Clock High Clock High to Output High-Z
(1)
2 2 2
2 2 2
2 2 2
9
____
9
____
9
____
Clock High to Output Low-Z(1)
Port-to-Port Delay tCWDD tCCS Write Port Clock High to Read Data Delay Clock-to-Clock Setup Time
____
28 10
____
35 15
____
40 15
ns ns
5640 tbl 11
____
____
____
NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). This parameter is guaranteed by device characterization, but is not production tested. 2. The Pipelined output parameters (tCYC2, tCD2) apply to either or both the Left and Right ports when FT/PIPE = VIH. Flow-through parameters (tCYC1, tCD1) apply when FT/PIPE = VIL for that port. 3. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE), FT/PIPER, and FT/PIPEL.
6.42 8
IDT70T9359/49L High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle for .low-Through Output (FT/PIPE"X" = VIL)(3,7)
tCYC1 tCH1 CLK
CE0
tCL1
tSC CE1 tSB
UB, LB
t HC
tSC
tHC
tHB tSB tHB
R/W
tSW tHW tSA tHA An + 1 tCD1 tDC Qn tCKLZ
(1)
ADDRESS
(5)
An
An + 2
An + 3 tCKHZ (1)
DATAOUT
Qn + 1
(1)
Qn + 2 tOLZ (1) tDC
tOHZ
OE
(2)
tOE
5640 drw 06
Timing Waveform of Read Cycle for Pipelined Operation (FT/PIPE"X" = VIH)(3,7)
t CYC2 tCH2 CLK CE0 tSC CE1 UB, LB R/W tSB tHB tSB
(6)
tCL2
tHC
tSC
(4)
tHC
tHB
tSW tSA
tHW tHA An + 1 (1 Latency) tCD2 Qn tCKLZ
(1)
ADDRESS
(5)
An
An + 2 tDC Qn + 1
An + 3
DATAOUT
Qn + 2
(1)
(6)
tOHZ
tOLZ
(1)
OE
(2)
tOE
5640 drw 07 NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge. 3. ADS = VIL, CNTEN and CNTRST = VIH. 4. The output is disabled (High-Impedance state) by C E 0 = V IH , CE 1 = V IL f ollowing the next rising edge of the clock. Refer to Truth Table 1. 5. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 6. If UB or LB was HIGH, then the Upper Byte and/or Lower Byte of DATAOUT for Qn + 2 would be disabled (High-Impedance state). 7. "X' here denotes Left or Right port. The diagram is with respect to that port.
6.42 9
IDT70T9359/49L High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Timing Waveform of a Bank Select Pipelined Read(1,2)
tCH2 CLK tSA ADDRESS(B1) tSC
CE0(B1)
tCYC2 tCL2
tHA A0 tHC tSC tCD2 tHC tCD2 Q0 tDC tCKHZ(3) Q1 tDC A3 A4 tCD2 Q3 tCKLZ
(3)
A1
A2
A3
A4
A5
A6
DATAOUT(B1) tSA ADDRESS(B2) tHA A0 A1
tCKHZ (3) A5 A6
A2
tSC tHC
CE0(B2)
tSC
tHC tCD2 tCKHZ Q2 tCKLZ
(3)
tCD2
(3)
DATAOUT(B2)
tCKLZ(3)
Q4
5640 drw 08
Timing Waveform with Port-to-Port .low-Through Read(4,5,7)
CLK "A" tSW tHW R/W "A" tSA ADDRESS "A" tHA
NO MATCH
MATCH
tSD DATAIN "A"
VALID
tHD
tCCS CLK "B"
(6)
tCD1 R/W "B" tSW tSA ADDRESS "B" tHW tHA
NO MATCH
MATCH
tCWDD DATAOUT "B" tDC
(6)
tCD1
VALID VALID
tDC
5640 drw 09
NOTES: 1. B1 Represents Bank #1; B2 Represents Bank #2. Each Bank consists of one IDT70T9359/49 for this waveform, and are setup for depth expansion in this example. ADDRESS(B1) = ADDRESS (B2) in this situation. 2. UB, LB, OE, and ADS = VIL; CE1(B1) , CE1(B2), R/W, CNTEN , and CNTRST = VIH. 3. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 4. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = V IH. 5. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to. 6. If tCCS < maximum specified, then data from right port READ is not valid until the maximum specified for tCWDD. If tCCS > maximum specified, then data from right port READ is not valid until tCCS + t CD1. tCWDD does not apply in this case. 7. All timing is the same for both Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite from Port "A".
6.42 10
IDT70T9359/49L High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read-to-Write-to-Read ( OE = VIL)(3)
tCYC2 tCH2 tCL2 CLK
CE0
tSC CE1 tSB
UB, LB
tHC
tHB
tSW tHW R/W tSW tHW
ADDRESS
(4)
An tSA tHA
An +1
An + 2
An + 2 tSD tHD Dn + 2
An + 3
An + 4
DATAIN
(2)
tCD2 Qn READ
tCKHZ
(1)
tCKLZ
(1)
tCD2 Qn + 3
DATAOUT
NOP
(5)
WRITE
READ
5640 drw 10
Timing Waveform of Pipelined Read-to-Write-to-Read ( OE Controlled)(3)
tCYC2 tCH2 CLK CE0 tSC CE1 tSB UB, LB tSW tHW R/W tSW tHW tHB tHC tCL2
ADDRESS
(4)
An tSA tHA
An +1
An + 2 tSD tHD
An + 3
An + 4
An + 5
DATAIN
(2)
tCD2 Qn tOHZ (1)
Dn + 2
Dn + 3
tCKLZ(1)
tCD2 Qn + 4
DATAOUT
OE READ WRITE READ
5640 drw 11
NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 3. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = V IH. "NOP" is "No Operation". 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
6.42 11
IDT70T9359/49L High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Timing Waveform of .low-Through Read-to-Write-to-Read (OE = VIL)(3)
tCH1 CLK tCYC1 tCL1
CE0
tSC CE1 tSB
UB, LB
tHC
tHB
tSW tHW R/W tSW tHW
ADDRESS
(4)
tSA DATAIN
(2)
An tHA
An +1
An + 2
An + 2 tSD tHD Dn + 2
An + 3
An + 4
tCD1 Qn tDC READ
tCD1 Qn + 1 tCKHZ NOP
(5) (1)
tCD1
tCD1 Qn + 3 tDC READ
DATAOUT
tCKLZ WRITE
(1)
5640 drw 12
Timing Waveform of .low-Through Read-to-Write-to-Read (OE Controlled)(3)
tCYC1 tCH1 tCL1 CLK
CE0
tSC CE1 tSB
UB, LB
tHC
tHB
tSW tHW R/W ADDRESS
(4)
tSW tHW An tSA tHA An +1 An + 2 tSD tHD Dn + 2
(2)
An + 3
An + 4
An + 5
DATAIN tCD1 Qn tOHZ
OE
(1)
Dn + 3
tDC
tOE tCD1
(1)
tCD1 Qn + 4 tDC
DATAOUT
tCKLZ
READ
WRITE
READ
5640 drw 13
NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 3. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = V IH. "NOP" is "No Operation". 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
6.42 12
IDT70T9359/49L High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read with Address Counter Advance (1)
tCH2 CLK tSA ADDRESS An tSAD tHAD
ADS
tCYC2 tCL2
tHA
tSAD tHAD
CNTEN
tSCN tHCN tCD2
DATAOUT
Qx - 1(2)
Qx tDC
Qn
Qn + 1
Qn + 2(2)
Qn + 3
READ EXTERNAL ADDRESS
READ WITH COUNTER
COUNTER HOLD
READ WITH COUNTER
5640 drw 14
Timing Waveform of .low-Through Read with Address Counter Advance(1)
tCH1 CLK tSA ADDRESS tHA tCYC1 tCL1
An tSAD tHAD
ADS
tSAD tHAD tSCN tHCN
CNTEN
tCD1 DATAOUT Qx(2) tDC READ EXTERNAL ADDRESS READ WITH COUNTER COUNTER HOLD READ WITH COUNTER
5640 drw 15
Qn
Qn + 1
Qn + 2
Qn + 3(2)
Qn + 4
NOTES: 1. CE0, OE, UB, and LB = VIL; CE1, R/W, and CNTRST = V IH. 2. If there is no address change via ADS = VIL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then the data output remains constant for subsequent clocks.
6.42 13
IDT70T9359/49L High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Address Counter Advance (.low-Through or Pipelined Outputs)(1)
tCH2 CLK tSA ADDRESS tHA tCYC2 tCL2
An
INTERNAL(3) ADDRESS tSAD tHAD
ADS
An(7)
An + 1
An + 2
An + 3
An + 4
CNTEN(7)
tSD tHD DATAIN Dn WRITE EXTERNAL ADDRESS Dn + 1 Dn + 1 Dn + 2 Dn + 3 Dn + 4
WRITE WRITE WITH COUNTER COUNTER HOLD
WRITE WITH COUNTER
5640 drw 16
Timing Waveform of Counter Reset (Pipelined Outputs)(2)
tCH2 CLK tSA tHA ADDRESS(4) INTERNAL(3) ADDRESS R/W
ADS CNTEN
tCYC2 tCL2
An
(6)
An + 1
An + 2
Ax
0 tSW tHW
1
An
An + 1
tSAD tHAD tSCN tHCN tSRST tHRST
CNTRST
tSD
tHD D0 Q0 Q1 READ ADDRESS n READ ADDRESS n+1 Qn
DATAIN DATAOUT(5) COUNTER RESET
(6)
WRITE ADDRESS 0
READ ADDRESS 0
READ ADDRESS 1
NOTES: 5640 drw 17 1. CE0, UB, LB, and R/W = VIL; CE1 and CNTRST = VIH. 2. CE0, UB, LB = VIL; CE1 = VIH. 3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 6. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset cycle. ADDR0 will be accessed. Extra cycles are shown here simply for clarification. 7. CNTEN = VIL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance. The ‘An +1’ Address is written to during this cycle.
6.42 14
IDT70T9359/49L High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Preliminary Industrial and Commercial Temperature Ranges
.unctional Description
The IDT70T9359/49 provides a true synchronous Dual-Port Static RAM interface. Registered inputs provide minimal set-up and hold times on address, data, and all critical control inputs. All internal registers are clocked on the rising edge of the clock signal, however, the self-timed internal write pulse is independent of the LOW to HIGH transition of the clock signal. An asynchronous output enable is provided to ease asynchronous bus interfacing. Counter enable inputs are also provided to stall the operation of the address counters for fast interleaved memory applications. CE0 = VIL and CE1 = VIH for one clock cycle will power down the internal circuitry to reduce static power consumption. Multiple chip enables allow easier banking of multiple IDT70T9359/49's for depth expansion configurations. When the Pipelined output mode is enabled, two cycles are required with CE0 = VIL and CE1 = VIH to re-activate the outputs.
Depth and Width Expansion
The IDT70T9359/49 features dual chip enables (refer to Truth Table I) in order to facilitate rapid and simple depth expansion with no requirements for external logic. Figure 4 illustrates how to control the varioius chip enables in order to expand two devices in depth. The IDT70T9359/49 can also be used in applications requiring expanded width, as indicated in Figure 4. Since the banks are allocated at the discretion of the user, the external controller can be set up to drive the input signals for the various devices as required to allow for 36-bit or wider applications.
A13/A12(1)
IDT70T9359/49
CE0 CE1 VDD
IDT70T9359/49
CE0 CE1 VDD
Control Inputs
Control Inputs
IDT70T9359/49
CE1 CE0
IDT70T9359/49
CE1 CE0 CNTRST CLK ADS CNTEN R/W LB, UB OE
Control Inputs
Control Inputs
5640 drw 18
Figure 4. Depth and Width Expansion with IDT70T9359/49 NOTE: 1. A13 is for IDT70T9359, A12 is for IDT70T9349.
6.42 15
IDT70T9359/49L High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Preliminary Industrial and Commercial Temperature Ranges
Ordering Information
IDT XXXXX Device Type A Power 99 Speed A Package A Process/ Temperature Range
Blank I(1) PF BF
Commercial (0 °C to +70°C) Industrial (-40°C to +85°C) 100-pin TQFP (PN100-1) 100-pin fpBGA (BF100)
7 9 12 L
Commercial Only Commercial & Industrial Commercial Only Low Power
Speed in nanoseconds
70T9359 144K (8K x 18) 2.5V Synchronous Dual-Port RAM 70T9349 72K (4K x 18) 2.5V Synchronous Dual-Port RAM
5640 drw 19
NOTE: 1. Contact your local sales office for Industrial temp range for other speeds, packages and powers.
Datasheet Document History
07/08/02: Initial Public Release
CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054
for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com
6.42 16
for Tech Support: 831-754-4613 DualPortHelp@idt.com
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