IDT70V08S15PFI

HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM Features True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20/25/35ns (max.) Low-power operation – IDT70V08S Active: 550mW (typ.) Standby: 5mW (typ.) – IDT70V08L Active: 550mW (typ.) Standby: 1mW (typ.) Dual chip enables allow for depth expansion without external logic IDT70V08 easily expands data bus width to 16 bits or x IDT70V08S/L x x x x x x x x x x x more using the Master/Slave select when cascading more than one device M/S = VIH for BUSY output flag on Master, M/S = VIL for BUSY input on Slave Busy and Interrupt Flags On-chip port arbitration logic Full on-chip hardware support of semaphore signaling between ports Fully asynchronous operation from either port LVTTL-compatible, single 3.3V (±0.3V) power supply Available in a 100-pin TQFP Industrial temperature range (–40°C to +85°C) is available for selected speeds x Functional Block Diagram R/W L CE0L CE1L OE L R/WR CE0R CE1R OE R I/O 0-7L I/O Control (1,2) I/O Control I/O 0-7R (1,2) BUSY L BUSY R 64Kx8 MEMORY ARRAY 70V08 A15R A 0R A15L A0L Address Decoder Address Decoder A15L A 0L CE 0L CE1L OE L R/W L SEM L (2) INT L ARBITRATION INTERRUPT SEMAPHORE LOGIC A15R A 0R CE0R CE1R OER R/W R SEMR (2) INT R 3740 drw 01 M/S (1) NOTES: 1. BUSY is an input as a Slave (M/S-VIL) and an output when it is a Master (M/S-VIH). 2. BUSY and INT are non-tri-state totem-pole outputs (push-pull). JANUARY 2001 DSC-3740/4 1 ©2000 Integrated Device Technology, Inc. IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Description The IDT70V08 is a high-speed 64K x 8 Dual-Port Static RAM. The IDT70V08 is designed to be used as a stand-alone 512K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bitor-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 16-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT’s CMOS high-performance technology, these devices typically operate on only 550mW of power. The IDT70V08 is packaged in a 100-pin Thin Quad Flatpack (TQFP). Pin Configurations(1,2,3) Index NC NC A7L A8L A9L A10L A11L A12L A13L A14L A15L NC Vcc NC NC NC NC CE0L CE1L SEML R/WL OEL GND NC NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 1 75 2 74 3 73 4 72 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 54 54 53 NC NC A6L A5L A4L A3L A2L A1L A0L NC INTL BUSYL GND M/S BUSYR INTR A0R A1R A2R A3R A4R A5R A6R NC NC IDT70V08PF PN100-1(4) 100-Pin TQFP Top View(5) 52 24 51 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 NC NC A7R A8R A9R A10R A11R A12R A13R A14R A15R NC GND NC NC NC NC CE0R CE1R SEMR , R/WR OER GND GND NC 3740 drw 02 NOTES: 1. All Vcc pins must be connected to power supply. 2. All GND pins must be connected to ground. 3. Package body is approximately 14mm x 14mm x 1.4mm. 4. This package code is used to reference the package diagram. 5. This text does not indicate orientation of the actual part-marking. GND NC I/O7L I/O6L I/O5L I/O4L I/O3L I/O2L GND I/O1L I/O0L Vcc GND I/O0R I/O1R I/O2R Vcc I/O3R I/O4R I/O5R I/O6R I/O7R NC NC NC 2 IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Absolute Maximum Ratings(1) Symbol VTERM(2) Rating Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature DC Output Current Commercial & Industrial -0.5 to +4.6 Unit V Maximum Operating Temperature and Supply Voltage(1,2) Grade Commercial Ambient Temperature 0OC to +70OC -40OC to +85OC GND 0V 0V Vcc 3.3V + 0.3V 3.3V + 0.3V 3740 tbl 02 TBIAS TSTG IOUT -55 to +125 -65 to +150 50 o C C Industrial o mA 3740 tbl 01 NOTES: 1. This is the parameter TA. This is the "instant on" case temperature. 2. Industrial temperature: for specific speeds, packages and powers contact yours sales office. NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed Vcc + 0.3V for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 0.3V. Capacitance(1) Symbol CIN COUT Parameter Input Capacitance (TA = +25°C, f = 1.0mhz) Conditions(2) VIN = 3dV V OUT = 3dV Max. 9 10 Unit pF pF 3740 tbl 03 Output Capacitance Pin Names Left Port CE0L, CE1L R/WL OEL A0L - A15L I/O0L - I/O7L SEML INTL BUSYL Right Port CE0R, CE1R R/WR OER A0R - A15R I/O0R - I/O7R SEMR INTR BUSYR M/S VCC GND Names Chip Enables Read/Write Enable Output Enable Address Data Input/Output Semaphore Enable Interrupt Flag Busy Flag Master or Slave Select Power Ground 3740 tbl 04 NOTES: 1. This parameter is determined by device characterization but is not production tested. 2. 3dV represents the interpolated capacitance when the input and output signals switch from 0V to 3V or from 3V to 0V. Recommended DC Operating Conditions Symbol VCC GND VIH VIL Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min. 3.0 0 2.0 -0.3 (1) Typ. 3.3 0 ____ Max. 3.6 0 VCC+0.3 0.8 (2) Unit V V V V 3740 tbl 05 ____ NOTES: 1. VIL > -1.5V for pulse width less than 10ns. 2. VTERM must not exceed Vcc + 0.3V. 3 IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Truth Table I – Chip Enable(1,2) CE CE0 VIL L < 0.2V VIH H X >VCC -0.2V X(3) CE 1 Mode Port Selected (TTL Active) Port Selected (CMOS Active) Port Deselected (TTL Inactive) Port Deselected (TTL Inactive) Port Deselected (CMOS Inactive) Port Deselected (CMOS Inactive) 3740 tbl 06 VIH > VCC -0.2V X VIL X(3) VCC-0.2V. Truth Table II – Non-Contention Read/Write Control Inputs(1) CE (2) Outputs OE X X L H SEM H H H X I/O0-7 High-Z DATAIN DATAOUT High-Z Deselected: Power-Down Write to Memory Read Memory Outputs Disabled 3740 tbl 07 R/W X L H X Mode H L L X NOTES: 1. A0L — A15L ≠ A0R — A15R 2. Refer to Chip Enable Truth Table. Truth Table III – Semaphore Read/Write Control(1) Inputs(1) CE (2) Outputs OE L X X SEM L L L I/O0-7 DATAOUT DATAIN ______ R/W H ↑ X Mode Read Semaphore Flag Data Out Write I/O0 into Semaphore Flag Not Allowed 3740 tbl 08 H H L NOTES: 1. There are eight semaphore flags written to I/O0 and read from all the I/Os (I/O0-I/O7). These eight semaphore flags are addressed by A0-A2. 2. Refer to Chip Enable Truth Table. 4 IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VCC = 3.3V ± 0.3V) 70V08S Symbol |ILI| |ILO| VOL VOH Parameter Input Leakage Current (1) 70V08L Min. ___ Test Conditions V CC = 3.6V, VIN = 0V to V CC CE(2) = VIH, VOUT = 0V to V CC IOL = +4mA IOH = -4mA Min. ___ Max. 10 10 0.4 ___ Max. 5 5 0.4 ___ Unit µA µA V V 3740 tbl 09 Output Leakage Current Output Low Voltage Output High Voltage ___ ___ ___ ___ 2.4 2.4 NOTES: 1. At Vcc < 2.0V, input leakages are undefined. 2. Refer to Chip Enable Truth Table. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1,6,7) (VCC = 3.3V ± 0.3V) Symbol ICC Parameter Dynamic Operating Current (Both Ports Active) Test Condition CE = VIL, Outputs Disabled SEM = VIH f = fMAX(3) Version COM'L IND COM'L IND COM'L IND COM'L IND COM'L S L S L S L S L S L S L S L S L S L S L 70V08X15 Com'l Only Typ.(2) Max 170 170 ____ ____ 70V08X20 Com'l Only Typ.(2) Max 165 165 ____ ____ Unit mA 260 265 ____ ____ 255 220 ____ ____ ISB1 Standby Current (Both Ports - TTL Level Inputs) CEL = CER = VIH SEMR = SEML = VIH f = fMAX(3) 44 44 ____ ____ 70 60 ____ ____ 39 39 ____ ____ 60 50 ____ ____ mA ISB2 Standby Current (One Port - TTL Level Inputs) CE"A" = VIL and CE"B" = VIH(5) Active Port Outputs Disabled, f=fMAX(3) SEMR = SEML = VIH Both Ports CEL and CER > VCC - 0.2V VIN > VCC - 0.2V or VIN < 0.2V, f = 0(4) SEMR = SEML > VCC - 0.2V CE"A" < 0.2V and CE"B" > VCC - 0.2V(5) SEMR = SEML > VCC - 0.2V VIN > VCC - 0.2V or VIN < 0.2V Active Port Outputs Disabled f = fMAX(3) 115 115 ____ ____ 160 145 ____ ____ 105 105 ____ ____ 155 140 ____ ____ mA ISB3 Full Standby Current (Both Ports - All CMOS Level Inputs) 1.0 0.2 ____ ____ 6 3 ____ ____ 1.0 0.2 ____ ____ 6 3 ____ ____ mA ISB4 Full Standby Current (One Port - All CMOS Level Inputs) 115 115 ____ ____ 155 140 ____ ____ 105 105 ____ ____ 150 135 ____ ____ mA IND NOTES: 1. 'X' in part numbers indicates power rating (S or L) 2. VCC = 3.3V, TA = +25°C, and are not production tested. ICCDC = 90mA (Typ.) 3. At f = f MAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions" of input levels of GND to 3V. 4. f = 0 means no address or control lines change. 5. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 6. Refer to Chip Enable Truth Table. 7. Industrial temperature: for specific speeds, packages and powers contact your sales office. 3740 tbl 10a 5 IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1,6,7) (VCC = 3.3V ± 0.3V) Symbol ICC Parameter Dynamic Operating Current (Both Ports Active) Test Condition CE = VIL, Outputs Disabled SEM = VIH f = fMAX(3) Version COM'L IND COM'L IND COM'L IND COM'L IND COM'L S L S L S L S L S L S L S L S L S L S L 70V08X25 Com'l Only Typ.(2) Max 120 120 ____ ____ 70V08X35 Com'l Only Typ.(2) Max 110 110 ____ ____ Unit mA 205 170 ____ ____ 195 160 ____ ____ ISB1 Standby Current (Both Ports - TTL Level Inputs) CEL = CER = VIH SEMR = SEML = VIH f = fMAX(3) 17 15 ____ ____ 45 40 ____ ____ 15 13 ____ ____ 40 35 ____ ____ mA ISB2 Standby Current (One Port - TTL Level Inputs) CE"A" = VIL and CE"B" = VIH(5) Active Port Outputs Disabled, f=fMAX(3) SEMR = SEML = VIH Both Ports CEL and CER > VCC - 0.2V VIN > VCC - 0.2V or VIN < 0.2V, f = 0(4) SEMR = SEML > VCC - 0.2V CE"A" < 0.2V and CE"B" > VCC - 0.2V(5) SEMR = SEML > VCC - 0.2V VIN > VCC - 0.2V or VIN < 0.2V Active Port Outputs Disabled f = fMAX(3) 60 60 ____ ____ 115 100 ____ ____ 50 50 ____ ____ 105 90 ____ ____ mA ISB3 Full Standby Current (Both Ports - All CMOS Level Inputs) 1.0 0.2 ____ ____ 6 3 ____ ____ 1.0 0.2 ____ ____ 6 3 ____ ____ mA ISB4 Full Standby Current (One Port - All CMOS Level Inputs) 70 70 ____ ____ 110 95 ____ ____ 60 60 ____ ____ 100 85 ____ ____ mA IND NOTES: 1. 'X' in part numbers indicates power rating (S or L) 2. VCC = 3.3V, TA = +25°C, and are not production tested. ICCDC = 90mA (Typ.) 3. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions" of input levels of GND to 3V. 4. f = 0 means no address or control lines change. 5. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 6. Refer to Chip Enable Truth Table. 7. Industrial temperature: for specific speeds, packages and powers contact your sales office. 3740 tbl 10b AC Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND to 3.0V 5ns Max. 1.5V 1.5V Figures 1 and 2 3740 tbl 11 3.3V 590Ω DATAOUT BUSY INT DATAOUT 435Ω 30pF 435Ω 3.3V 590Ω 5pF 3740 drw 03 3740 drw 04 Figure 1. AC Output Load Figure 2. Output Test Load (for tLZ , tHZ, t WZ, tOW) * Including scope and jig. 6 IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(4,5) 70V08X15 Com'l Only Symbol READ CYCLE tRC tAA tACE tAOE tOH tLZ tHZ tPU tPD tSOP tSAA Read Cycle Time Address Access Time Chip Enable Access Time (3) 70V08X20 Com'l Only Min. Max. Unit Parameter Min. Max. 15 ____ ____ 20 ____ ____ ns ns ns ns ns ns ns ns ns ns ns 3740 tbl 12a 15 15 10 ____ 20 20 12 ____ ____ ____ Output Enable Access Time Output Hold from Address Change Output Low-Z Time(1,2) Output High-Z Time (1,2) (2,5) (2,5) ____ ____ 3 3 ____ 3 3 ____ ____ ____ 12 ____ 12 ____ Chip Enable to Power Up Time 0 ____ 0 ____ Chip Disable to Power Down Time 15 ____ 20 ____ Semaphore Flag Update Pulse (OE or SEM) Semaphore Address Access Time 10 ____ 10 ____ 15 20 70V08X25 Com'l Only Symbol READ CYCLE tRC tAA tACE tAOE tOH tLZ tHZ tPU tPD tSOP tSAA Read Cycle Time Address Access Time Chip Enable Access Time (3) 70V08X35 Com'l Only Min. Max. Unit Parameter Min. Max. 25 ____ ____ 35 ____ ____ ns ns ns ns ns ns ns ns ns ns ns 3740 tbl 12b 25 25 15 ____ 35 35 20 ____ ____ ____ Output Enable Access Time Output Hold from Address Change Output Low-Z Time(1,2) Output High-Z Time (1,2) Chip Enable to Power Up Time (2,5) (2,5) ____ ____ 3 3 ____ 3 3 ____ ____ ____ 15 ____ 20 ____ 0 ____ 0 ____ Chip Disable to Power Down Time 25 ____ 45 ____ Semaphore Flag Update Pulse (OE or SEM) Semaphore Address Access Time 15 ____ 15 ____ 35 45 NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE= V IH and SEM = VIL. 4. 'X' in part numbers indicates power rating (S or L). 5. Industrial temperature: for specific speeds, packages and powers contact your sales office. 7 IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Waveform of Read Cycles(5) tRC ADDR tAA (4) tACE tAOE OE (4) (4) CE(6) R/W tLZ DATAOUT (1) tOH VALID DATA (4) (2) tHZ BUSYOUT tBDD (3,4) 3740 drw 05 NOTES: 1. Timing depends on which signal is asserted last, OE or CE . 2. Timing depends on which signal is de-asserted first CE or OE. 3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, t AA or tBDD . 5. SEM = VIH. 6. Refer to Chip Enable Truth Table. Timing of Power-Up Power-Down CE tPU ICC 50% 50% 3740 drw 06 tPD ISB , 8 IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(5,6) 70V08X15 Com'l Only Symbol WRITE CYCLE tWC tEW tAW tAS tWP tWR tDW tHZ tDH tWZ tOW tSWRD tSPS Write Cycle Time Chip Enable to End-of-Write (3) 70V08X20 Com'l Only Min. Max. Unit Parameter Min. Max. 15 12 12 0 12 0 10 ____ ____ ____ ____ ____ ____ ____ ____ 20 15 15 0 15 0 15 ____ ____ ____ ____ ____ ____ ____ ____ ns ns ns ns ns ns ns ns ns ns ns ns ns 3740 tbl 13a Address Valid to End-of-Write Address Set-up Time Write Pulse Width Write Recovery Time Data Valid to End-of-Write Output High-Z Time Data Hold Time (4) (1,2) (1,2) (3) 10 ____ 10 ____ 0 ____ 0 ____ Write Enable to Output in High-Z Output Active from End-of-Write SEM Flag Write to Read Time SEM Flag Contention Window 10 ____ ____ 10 ____ ____ (1,2,4) 0 5 5 0 5 5 ____ ____ 70V08X25 Com'l Only Symbol WRITE CYCLE tWC tEW tAW tAS tWP tWR tDW tHZ tDH tWZ tOW tSWRD tSPS Write Cycle Time Chip Enable to End-of-Write (3) Address Valid to End-of-Write Address Set-up Time (3) Write Pulse Width Write Recovery Time Data Valid to End-of-Write Output High-Z Time Data Hold Time (4) (1,2) (1,2) 70V08X35 Com'l Only Min. Max. Unit Parameter Min. Max. 25 20 20 0 20 0 15 ____ ____ ____ ____ ____ ____ ____ ____ 35 30 30 0 25 0 20 ____ ____ ____ ____ ____ ____ ____ ____ ns ns ns ns ns ns ns ns ns ns ns ns ns 3740 tbl 13b 15 ____ 20 ____ 0 ____ 0 ____ Write Enable to Output in High-Z Output Active from End-of-Write SEM Flag Write to Read Time SEM Flag Contention Window 15 ____ 20 ____ (1,2,4) 0 5 5 0 5 5 ____ ____ ____ ____ NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranted by device characterization, but is not production tested. 3. To access RAM, CE= VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. 4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 5. 'X' in part numbers indicates power rating (S or L). 6 Industrial temperature: for specific speeds, packages and powers contact your sales office. 9 IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,5,8) tWC ADDRESS tHZ (7) OE tAW CE or SEM (9,10) tAS R/W (6) tWP (2) tWR (3) tWZ (7) DATAOUT (4) tOW (4) tDW DATAIN tDH 3740 drw 07 Timing Waveform of Write Cycle No. 2, CE Controlled Timing(1,5) tWC ADDRESS tAW CE or SEM (9,10) tAS (6) R/W tEW (2) tWR (3) tDW DATAIN tDH 3740 drw 08 NOTES: 1. R/W or CE must be HIGH during all address transitions. 2. A write occurs during the overlap (tEW or tWP ) of a LOW CE and a LOW R/W for memory array writing cycle. 3. tWR is measured from the earlier of CE or R/W (or SEM or R/W) going HIGH to the end of write cycle. 4. During this period, the I/O pins are in the output state and input signals must not be applied. 5. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state. 6. Timing depends on which enable signal is asserted last, CE or R/W. 7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load (Figure 2). 8. If OE is LOW during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW ) to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW . If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP . 9. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. tEW must be met for either condition. 10. Refer to Chip Enable Truth Table. 10 IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Semaphore Read after Write Timing, Either Side(1) tSAA A0-A2 VALID ADDRESS tAW SEM tEW tDW I/O tAS R/W tSWRD OE Write Cycle Read Cycle 3740 drw 09 VALID ADDRESS tACE tSOP tOH DATA OUT(2) VALID tWR DATAIN VALID tWP tDH tAOE NOTES: 1. CE = VIH for the duration of the above timing (both write and read cycle) (Refer to Chip Enable Truth Table). 2. DATAOUT VALID represents I/O0-7 equal to semaphore value. Timing Waveform of Semaphore Write Contention(1,3,4) A0"A"-A2"A" MATCH SIDE (2) "A" R/W"A" SEM"A" tSPS A0"B"-A2"B" MATCH SIDE (2) "B" R/W"B" SEM"B" 3740 drw 10 NOTES: 1. DOR = D OL = VIL, CEL = CER = V IH (Refer to Chip Enable Truth Table). 2. All timing is the same for left and right ports. Port "A" may be either left or right port. "B" is the opposite from port "A". 3. This parameter is measured from R/W"A" or SEM "A" going HIGH to R/W"B" or SEM"B" going HIGH. 4. If tSPS is not satisfied, there is no guarantee which side will be granted the semaphore flag. 11 IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(6,7) 70V08X15 Com'l Only Symbol BUSY TIMING (M/S=V IH) tBAA tBDA tBAC tBDC tAPS tBDD tWH BUSY Access Time from Address Match BUSY Disable Time from Address Not Matched BUSY Access Time from Chip Enable Low BUSY Acce ss Time from Chip Enable High Arbitration Priority Set-up Time (2) BUSY Disable to Valid Data(3) Write Hold After BUSY (5) ____ 70V08X20 Com'l Only Min. Max. Unit Parameter Min. Max. 15 15 15 15 ____ ____ 20 20 20 20 ____ ns ns ns ns ns ns ns ____ ____ ____ ____ ____ ____ 5 ____ 5 ____ 17 ____ 35 ____ 12 15 BUSY TIMING (M/S=V IL) tWB tWH BUSY Input to Write (4) Write Hold After BUSY (5) 0 12 ____ 0 15 ____ ns ns ____ ____ PORT-TO-PORT DELAY TIMING tWDD tDDD Write Pulse to Data Delay (1) Write Data Valid to Read Data Delay (1) ____ ____ 30 25 ____ ____ 45 30 ns ns 3740 tbl 14a 70V08X25 Com'l Only Symbol BUSY TIMING (M/S=V IH) tBAA tBDA tBAC tBDC tAPS tBDD tWH BUSY Access Time from Address Match BUSY Disable Time from Address Not Matched BUSY Access Time from Chip Enable Low BUSY Acce ss Time from Chip Enable High Arbitration Priority Set-up Time BUSY Disable to Valid Data Write Hold After BUSY (5) (3) (2) ____ 70V08X35 Com'l Only Min. Max. Unit Parameter Min. Max. 25 25 25 25 ____ ____ 35 35 35 35 ____ ns ns ns ns ns ns ns ____ ____ ____ ____ ____ ____ 5 ____ 5 ____ 35 ____ 40 ____ 20 25 BUSY TIMING (M/S=V IL) tWB tWH BUSY Input to Write (4) Write Hold After BUSY (5) 0 20 ____ 0 25 ____ ns ns ____ ____ PORT-TO-PORT DELAY TIMING tWDD tDDD Write Pulse to Data Delay (1) Write Data Valid to Read Data Delay (1) ____ ____ 55 50 ____ ____ 65 60 ns ns 3740 tbl 14b NOTES: 1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and BUSY (M/S = VIH)". 2. To ensure that the earlier of the two ports wins. 3. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual), or tDDD – tDW (actual). 4. To ensure that the write cycle is inhibited on port "B" during contention on port "A". 5. To ensure that a write cycle is completed on port "B" after contention on port "A". 6. 'X' in part numbers indicates power rating (S or L). 7. Industrial temperature: for specific speeds, packages and powers contact yuor sales office. 12 IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Write with Port-to-Port Read and BUSY (M/S = VIH)(2,4,5) tWC ADDR"A" MATCH tWP R/W"A" tDW DATAIN "A" tAPS ADDR"B" tBAA BUSY"B" tWDD DATAOUT "B" tDDD (3) NOTES: 1. To ensure that the earlier of the two ports wins. tAPS is ignored for M/S = VIL (SLAVE). 2. CEL = CER = VIL, refer to Chip Enable Truth Table. 3. OE = VIL for the reading port. 4. If M/S = VIL (slave), BUSY is an input. Then for this example BUSY"A" = VIH and BUSY"B" input is shown above. 5. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A". 3740 drw 11 (1) tDH VALID MATCH tBDA tBDD VALID Timing Waveform of Write with BUSY (M/S = VIL) tWP R/W"A" tWB(3) BUSY"B" tWH (1) R/W"B" (2) NOTES: 1. tWH must be met for both BUSY input (SLAVE) and output (MASTER). 2. BUSY is asserted on port "B" blocking R/W"B", until BUSY"B" goes HIGH. 3. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A". 3740 drw 12 13 IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Waveform of BUSY Arbitration Controlled by CE Timing (M/S = VIH)(1,3) ADDR"A" and "B" ADDRESSES MATCH CE"A" tAPS (2) CE"B" tBAC BUSY"B" 3740 drw 13 tBDC Waveform of BUSY Arbitration Cycle Controlled by Address Match Timing (M/S = VIH)(1) ADDR"A" tAPS (2) ADDR"B" MATCHING ADDRESS "N" tBAA BUSY"B" 3740 drw 14 ADDRESS "N" tBDA NOTES: 1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from port “A”. 2. If tAPS is not satisfied, the BUSY signal will be asserted on one side or another but there is no guarantee on which side BUSY will be asserted. 3. Refer to Chip Enable Truth Table. 14 IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1,2) 70V08X15 Com'l Only Symbol INTERRUPT TIMING tAS tWR tINS tINR Address Set-up Time Write Recovery Time Interrupt Set Time Interrupt Reset Time 0 0 ____ ____ 70V08X20 Com'l Only Min. Max. Unit Parameter Min. Max. 0 0 ____ ____ ns ns ns ns 3740 tbl 15a ____ ____ 15 25 20 20 ____ ____ 70V08X25 Com'l Only Symbol INTERRUPT TIMING tAS tWR tINS tINR Address Set-up Time Write Recovery Time Interrupt Set Time Interrupt Reset Time 0 0 ____ ____ 70V08X35 Com'l Only Min. Max. Unit Parameter Min. Max. 0 0 ____ ____ ns ns ns ns 3740 tbl 15b ____ ____ 25 30 30 35 ____ ____ NOTES: 1. 'X' in part numbers indicates power rating (S or L). 2. Industrial temperature: for specific speeds, packages and powers contact your sales office. 15 IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Waveform of Interrupt Timing(1,5) tWC ADDR"A" tAS CE"A" (3) INTERRUPT SET ADDRESS (2) (4) tWR R/W"A" tINS INT"B" 3740 drw 15 (3) tRC ADDR"B" INTERRUPT CLEAR ADDRESS tAS CE"B" (3) (2) OE"B" tINR (3) INT"B" 3740 drw 16 NOTES: 1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from port “A”. 2. Refer to Interrupt Truth Table. 3. Timing depends on which enable signal (CE or R/ W) is asserted last. 4. Timing depends on which enable signal (CE or R/W) is de-asserted first. 5. Refer to Chip Enable Truth Table. Truth Tables Truth Table IV — Interrupt Flag(1,4,5) Left Port R/WL L X X X CEL L X X L OEL X X X L A15L-A0L FFFF X X FFFE INTL X X L (3) (2) Right Port R/WR X X L X CER X L L X OER X L X X A15R-A0R X FFFF FFFE X INTR L(2) H (3) Function Set Right INTR Flag Reset Right INTR Flag Set Left INTL Flag Reset Left INTL Flag 3740 tbl 16 X X H NOTES: 1. Assumes BUSYL = BUSYR =VIH. 2. If BUSYL = VIL, then no change. 3. If BUSYR = VIL, then no change. 4. INTL and INTR must be initialized at power-up. 5. Refer to Chip Enable Truth Table. 16 IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Truth Table V — Address BUSY Arbitration(4) Inputs CEL X H X L CER X X H L AOL-A15L AOR-A15R NO MATCH MATCH MATCH MATCH Outputs BUSYL(1) H H H (2) BUSYR(1) H H H (2) Function Normal Normal Normal Write Inhibit(3) 3740 tbl 17 NOTES: 1. Pins BUSYL and BUSYR are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSY outputs on the IDT70V08 are pushpull, not open drain outputs. On slaves the BUSY input internally inhibits writes. 2. "L" if the inputs to the opposite port were stable prior to the address and enable inputs of this port. "H" if the inputs to the opposite port became stable after the address and enable inputs of this port. If tAPS is not met, either BUSY L or BUSYR = LOW will result. BUSYL and BUSYR outputs can not be LOW simultaneously. 3. Writes to the left port are internally ignored when BUSYL outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored when BUSYR outputs are driving LOW regardless of actual logic level on the pin. 4. Refer to Chip Enable Truth Table. Truth Table VI — Example of Semaphore Procurement Sequence (1,2,3) Functions No Action Left Port Writes "0" to Semaphore Right Port Writes "0" to Semaphore Left Port Writes "1" to Semaphore Left Port Writes "0" to Semaphore Right Port Writes "1" to Semaphore Left Port Writes "1" to Semaphore Right Port Writes "0" to Semaphore Right Port Writes "1" to Semaphore Left Port Writes "0" to Semaphore Left Port Writes "1" to Semaphore D0 - D7 Left 1 0 0 1 1 0 1 1 1 0 1 D0 - D7 Right 1 1 1 0 0 1 1 0 1 1 1 Semaphore free Left port has semaphore token No change. Right side has no write access to semaphore Right port obtains semaphore token No change. Left port has no write access to semaphore Left port obtains semaphore token Semaphore free Right port has semaphore token Semaphore free Left port has semaphore token Semaphore free 3740 tbl 18 Status NOTES: 1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70V08. 2. There are eight semaphore flags written to via I/O0 and read from all I/O's (I/O0-I/O7). These eight semaphores are addressed by A0 - A2. 3. CE = VIH, SEM = V IL to access the semaphores. Refer to the Semaphore Read/Write Control Truth Table. Functional Description The IDT70V08 provides two ports with separate control, address and I/O pins that permit independent access for reads or writes to any location in memory. The IDT70V08 has an automatic power down feature controlled by CE. The CE0 and CE1 control the on-chip power down circuitry that permits the respective port to go into a standby mode when not selected (CE HIGH). When a port is enabled, access to the entire memory array is permitted. box or message center) is assigned to each port. The left port interrupt flag (INTL) is asserted when the right port writes to memory location FFFE (HEX), where a write is defined as CER = R/WR = VIL per the Truth Table. The left port clears the interrupt through access of address location FFFE when CEL = OEL = VIL, R/W is a "don't care". Likewise, the right port interrupt flag (INTR) is asserted when the left port writes to memory location FFFF (HEX) and to clear the interrupt flag (INTR), the right port must read the memory location FFFF. The message (8 bits) at FFFE or FFFF is user-defined since it is an addressable SRAM location. If the interrupt function is not used, 17 Interrupts If the user chooses the interrupt function, a memory location (mail IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges address locations FFFE and FFFF are not used as mail boxes, but as part of the random access memory. Refer to Truth Table IV for the interrupt operation. Busy Logic Busy Logic provides a hardware indication that both ports of the RAM have accessed the same location at the same time. It also allows one of the two accesses to proceed and signals the other side that the RAM is “Busy”. The BUSY pin can then be used to stall the access until the operation on the other side is completed. If a write operation has been attempted from the side that receives a BUSY indication, the write signal is gated internally to prevent the write from proceeding. The use of BUSY logic is not required or desirable for all applications. In some cases it may be useful to logically OR the BUSY outputs together and use any BUSY indication as an interrupt source to flag the event of an illegal or illogical operation. If the write inhibit function of BUSY logic is not desirable, the BUSY logic can be disabled by placing the part in slave mode with the M/S pin. Once in slave mode the BUSY pin operates solely as a write inhibit input pin. Normal operation can be programmed by tying the BUSY pins HIGH. If desired, unintended write operations can be prevented to a port by tying the BUSY pin for of the array and another master indicating BUSY on one other side of the array. This would inhibit the write operations from one port for part of a word and inhibit the write operations from the other port for the other part of the word. The BUSY arbitration on a master is based on the chip enable and address signals only. It ignores whether an access is a read or write. In a master/slave array, both address and chip enable must be valid long enough for a BUSY flag to be output from the master before the actual write pulse can be initiated with the R/W signal. Failure to observe this timing can result in a glitched internal write inhibit signal and corrupted data in the slave. Semaphores The IDT70V08 is an extremely fast Dual-Port 64K x 8 CMOS Static RAM with an additional 8 address locations dedicated to binary semaphore flags. These flags allow either processor on the left or right side of the Dual-Port RAM to claim a privilege over the other processor for functions defined by the system designer’s software. As an example, the semaphore can be used by one processor to inhibit the other from accessing a portion of the Dual-Port RAM or any other shared resource. The Dual-Port RAM features a fast access time, with both ports being completely independent of each other. This means that the activity on the left port in no way slows the access time of the right port. Both ports are identical in function to standard CMOS Static RAM and can be read from or written to at the same time with the only possible conflict arising from the simultaneous writing of, or a simultaneous READ/WRITE of, a non-semaphore location. Semaphores are protected against such ambiguous situations and may be used by the system program to avoid any conflicts in the non-semaphore portion of the Dual-Port RAM. These devices have an automatic power-down feature controlled by CE, the Dual-Port RAM enable, and SEM, the semaphore enable. The CE and SEM pins control on-chip power down circuitry that permits the respective port to go into standby mode when not selected. This is the condition which is shown in Truth Table III where CE and SEM are both HIGH. Systems which can best use the IDT70V08 contain multiple processors or controllers and are typically very high-speed systems which are software controlled or software intensive. These systems can benefit from a performance increase offered by the IDT70V08s hardware semaphores, which provide a lockout mechanism without requiring complex programming. Software handshaking between processors offers the maximum in system flexibility by permitting shared resources to be allocated in varying configurations. The IDT70V08 does not use its semaphore flags to control any resources through hardware, thus allowing the system designer total flexibility in system architecture. An advantage of using semaphores rather than the more common methods of hardware arbitration is that wait states are never incurred in either processor. This can prove to be a major advantage in very high-speed systems. A16 CE0 MASTER Dual Port RAM BUSYL BUSYR CE0 SLAVE Dual Port RAM BUSYL BUSYR CE1 MASTER Dual Port RAM BUSYL BUSYR CE1 SLAVE Dual Port RAM BUSYL BUSYR 3740 drw 17 Figure 3. Busy and chip enable routing for both width and depth expansion with IDT70V08 RAMs. that port LOW. The BUSY outputs on the IDT 70V08 RAM in master mode, are push-pull type outputs and do not require pull up resistors to operate. If these RAMs are being expanded in depth, then the BUSY indication for the resulting array requires the use of an external AND gate. Width Expansion with Busy Logic Master/Slave Arrays When expanding an IDT70V08 RAM array in width while using BUSY logic, one master part is used to decide which side of the RAMs array will receive a BUSY indication, and to output that indication. Any number of slaves to be addressed in the same address range as the master use the BUSY signal as a write inhibit signal. Thus on the IDT70V08 RAM the BUSY pin is an output if the part is used as a master (M/S pin = VIH), and the BUSY pin is an input if the part used as a slave (M/S pin = VIL) as shown in Figure 3. If two or more master parts were used when expanding in width, a split decision could result with one master indicating BUSY on one side 18 How the Semaphore Flags Work The semaphore logic is a set of eight latches which are independent of the Dual-Port RAM. These latches can be used to pass a flag, or token, from one port to the other to indicate that a shared resource IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges is in use. The semaphores provide a hardware assist for a use assignment method called “Token Passing Allocation.” In this method, the state of a semaphore latch is used as a token indicating that a shared resource is in use. If the left processor wants to use this resource, it requests the token by setting the latch. This processor then verifies its success in setting the latch by reading it. If it was successful, it proceeds to assume control over the shared resource. If it was not successful in setting the latch, it determines that the right side processor has set the latch first, has the token and is using the shared resource. The left processor can then either repeatedly request that semaphore’s status or remove its request for that semaphore to perform another task and occasionally attempt again to gain control of the token via the set and test sequence. Once the right side has relinquished the token, the left side should succeed in gaining control. The semaphore flags are active LOW. A token is requested by writing a zero into a semaphore latch and is released when the same side writes a one to that latch. The eight semaphore flags reside within the IDT70V08 in a separate memory space from the Dual-Port RAM. This address space is accessed by placing a low input on the SEM pin (which acts as a chip select for the semaphore flags) and using the other control pins (Address, CE, and R/W) as they would be used in accessing a standard Static RAM. Each of the flags has a unique address which can be accessed by either side through address pins A0 – A2. When accessing the semaphores, none of the other address pins has any effect. When writing to a semaphore, only data pin D0 is used. If a low level is written into an unused semaphore location, that flag will be set to a zero on that side and a one on the other side (see Truth Table VI). That semaphore can now only be modified by the side showing the zero. When a one is written into the same location from the same side, the flag will be set to a one for both sides (unless a semaphore request from the other side is pending) and then can be written to by both sides. The fact that the side which is able to write a zero into a semaphore subsequently locks out writes from the other side is what makes semaphore flags useful in interprocessor communications. (A thorough discussion on the use of this feature follows shortly.) A zero written into the same location from the other side will be stored in the semaphore request latch for that side until the semaphore is freed by the first side. When a semaphore flag is read, its value is spread into all data bits so that a flag that is a one reads as a one in all data bits and a flag containing a zero reads as all zeros. The read value is latched into one side’s output register when that side's semaphore select (SEM) and output enable (OE) signals go active. This serves to disallow the semaphore from changing state in the middle of a read cycle due to a write cycle from the other side. Because of this latch, a repeated read of a semaphore in a test loop must cause either signal (SEM or OE) to go inactive or the output will never change. A sequence WRITE/READ must be used by the semaphore in order to guarantee that no system level contention will occur. A processor requests access to shared resources by attempting to write a zero into a semaphore location. If the semaphore is already in use, the semaphore request latch will contain a zero, yet the semaphore flag will appear as one, a fact which the processor will verify by the subsequent read (see Table VI). As an example, assume a processor writes a zero to the left port at a free semaphore location. On a subsequent 19 read, the processor will verify that it has written successfully to that location and will assume control over the resource in question. Meanwhile, if a processor on the right side attempts to write a zero to the same semaphore flag it will fail, as will be verified by the fact that a one will be read from that semaphore on the right side during subsequent read. Had a sequence of READ/WRITE been used instead, system contention problems could have occurred during the gap between the read and write cycles. It is important to note that a failed semaphore request must be followed by either repeated reads or by writing a one into the same location. The reason for this is easily understood by looking at the simple logic diagram of the semaphore flag in Figure 4. Two semaphore request latches feed into a semaphore flag. Whichever latch is first to present a zero to the semaphore flag will force its side of the semaphore flag LOW and the other L PORT SEMAPHORE REQUEST FLIP FLOP D0 WRITE D Q R PORT SEMAPHORE REQUEST FLIP FLOP Q D D0 WRITE SEMAPHORE READ Figure 4. IDT70V08 Semaphore Logic SEMAPHORE READ , 3740 drw 18 side HIGH. This condition will continue until a one is written to the same semaphore request latch. Should the other side’s semaphore request latch have been written to a zero in the meantime, the semaphore flag will flip over to the other side as soon as a one is written into the first side’s request latch. The second side’s flag will now stay LOW until its semaphore request latch is written to a one. From this it is easy to understand that, if a semaphore is requested and the processor which requested it no longer needs the resource, the entire system can hang up until a one is written into that semaphore request latch. The critical case of semaphore timing is when both sides request a single token by attempting to write a zero into it at the same time. The semaphore logic is specially designed to resolve this problem. If simultaneous requests are made, the logic guarantees that only one side receives the token. If one side is earlier than the other in making the request, the first side to make the request will receive the token. If both requests arrive at the same time, the assignment will be arbitrarily made to one port or the other. One caution that should be noted when using semaphores is that semaphores alone do not guarantee that access to a resource is secure. As with any powerful programming technique, if semaphores are misused or misinterpreted, a software error can easily happen. Initialization of the semaphores is not automatic and must be handled via the initialization program at power-up. Since any semaphore request flag which contains a zero must be reset to a one, all semaphores on both sides should have a one written into them at initialization from both sides to assure that they will be free when needed. IDT70V08S/L High-Speed 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Ordering Information IDT XXXXX Device Type A Power 999 Speed A Package A Process/ Temperature Range Commercial (0°C to +70°C) Industrial (-40°C to +85°C) Blank I (1) PF 100-pin TQFP (PN100-1) 15 20 25 35 S L 70V08 NOTE: 1. Industrial temperature range is available. For other speeds, packages and powers contact your sales office. Commercial Only Commercial Only Commercial Only Commercial Only Standard Power Low Power Speed in nanoseconds 512K (64K x 8) Dual-Port RAM 3740 drw 19 Datasheet Document History: 3/15/99: Initiated datasheet document history Converted to new format Cosmetic and typographical corrections Page 2 Added additional notes to pin configurations Added 15ns speed grade Changed drawing format Replaced IDT logo Page 3 Increased storage temperature parameter Clarified TA parameter Page 5 DC Electric parameters–changed wording from open to disabled Page 18 Added IV to Truth Table in first paragraph Changed ±200mV to 0mV in notes Removed Preliminary status 6/9/99: 11/10/99: 1/12/01: CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com for Tech Support: 831-754-4613 DualPortHelp@idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 20