BAR90-02LS

BAR90... Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz (typ. 0.19 pF) • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA) • Improved ON / OFF mode harmonic distortion balance • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAR90-02LRH BAR90-02LS BAR90-098LRH " , ! ,   Type BAR90-02LRH BAR90-02LS BAR90-098LRH 1Pb-containing Package TSLP-2-7 TSSLP-2-1 TSLP-4-7 Configuration single, leadless single, leadless anti-parallel pair, leadless LS(nH) 0.4 0.2 0.4 Marking R9 J T9 package may be available upon special request Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation TS ≤ 137 °C, BAR90-02LS TS ≤ 133°C, all others Junction temperature Operating temperature range Storage temperature 1 Symbol VR IF Ptot Value 80 100 150 250 Unit V mA mW Tj Top Tstg 150 -55 ... 125 -55 ... 150 °C 2010-03-05 BAR90... Thermal Resistance Parameter Junction - soldering point 1) BAR90-02LS all others Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Breakdown voltage I(BR) = 5 µA Reverse current VR = 60 V Forward voltage IF = 3 mA IF = 100 mA 1For Symbol RthJS Value ≤ 90 ≤ 65 Unit K/W Symbol min. V(BR) IR VF 0.75 80 - Values typ. max. 50 Unit V nA V 0.81 0.9 0.87 1 calculation of RthJA please refer to Application Note Thermal Resistance 2 2010-03-05 BAR90... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Reverse parallel resistance VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Forward resistance I F = 1 mA, f = 100 MHz I F = 3 mA, f = 100 MHz I F = 10 mA, f = 100 MHz Charge carrier life time I F = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω I-region width Insertion loss1) I F = 1 mA, f = 1.8 GHz I F = 3 mA, f = 1.8 GHz I F = 10 mA, f = 1.8 GHz Isolation1) VR = 0 V, f = 0.9 GHz VR = 0 V, f = 1.8 GHz VR = 0 V, f = 2.45 GHz 1BAR90-02LRH Symbol min. CT RP rf - Values typ. max. Unit pF 0.25 0.3 0.19 0.18 35 5 4 2 1.3 0.8 750 0.35 kΩ - Ω 2.3 ns τ rr - WI IL - 20 0.16 0.11 0.08 18.5 13.5 11.5 - µm dB ISO - in series configuration, Z = 50 Ω 3 2010-03-05 BAR90... Diode capacitance CT = ƒ (VR) f = Parameter 0.5 pF Reverse parallel resistance RP = ƒ(V R) f = Parameter 10 4 KOhm 10 3 0.4 100 MHz CT 0.35 Rp 10 2 0.3 0.25 1 MHz 100 MHz 1 GHz 1.8 GHz 1 GHz 10 1 1.8 GHz 0.2 10 0 0.15 10 -1 0 0.1 0 2 4 6 8 10 12 14 16 V 20 2 4 6 8 10 12 14 16 V 20 VR VR Forward resistance rf = ƒ (I F) f = 100 MHz 10 1 Forward current IF = ƒ (VF) TA = Parameter 10 -1 A Ohm 10 -2 10 -3 10 0 10 -4 IF rf 10 -5 -40°C +25 °C +85 °C +125 °C 10 -1 -1 10 10 0 10 1 mA 10 2 10 -6 0.2 0.4 0.6 0.8 V 1.2 IF VF 4 2010-03-05 BAR90... Forward current IF = ƒ (T S) BAR90-02LRH / -098LRH 120 mA Forward current IF = ƒ (T S) BAR90-02LS 120 mA 100 90 80 100 90 80 IF 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 150 IF 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Permissible Puls Load RthJS = ƒ (tp) BAR90-02LRH / -098LRH 10 2 Permissible Pulse Load IFmax / I FDC = ƒ (t p) BAR90-02LRH / -098LRH 10 2 mA IFmax/IFDC mA 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 °C 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 °C 10 0 tp tp 5 2010-03-05 BAR90... Permissible Puls Load RthJS = ƒ (tp) BAR90-02LS 10 2 Permissible Pulse Load IFmax / I FDC = ƒ (t p) BAR90-02LS 10 2 10 1 10 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 I Fmax/IFDC - RthJS 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Insertion loss IL = -|S21|2 = ƒ(f) IF = Parameter BAR90-02LRH in series configuration, Z = 50Ω 0 dB Isolation ISO = -|S21| 2 = ƒ(f) VR = Parameter BAR90-02LRH in series configuration, Z = 50Ω 0 dB -0.1 |S21|² |S21|² 10mA 3mA 1mA 0.5mA -10 -0.15 -0.2 -15 -0.25 -20 -0.3 -25 -0.35 0V 1V 10 V 1 2 3 4 GHz -0.4 0 1 2 3 4 GHz 6 -30 0 6 f f 6 2010-03-05 Package TSLP-2-7 BAR90... Package Outline Top view 0.39 +0.01 -0.03 0.05 MAX. 0.65 ±0.05 Bottom view 0.6 ±0.05 2 2 1 1 Cathode marking 0.5 ±0.035 1) 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.35 0.45 0.3 0.925 1 0.275 0.275 0.375 0.6 Copper Solder mask 0.35 Stencil apertures Marking Layout (Example) BAR90-02LRH Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel Reel ø330 mm = 50.000 Pieces/Reel (optional) 4 1.16 0.5 Cathode marking 0.76 8 0.25 ±0.035 1) 1±0.05 7 2010-03-05 Package TSLP-4-7 BAR90... Package Outline Top view 0.39 +0.01 -0.03 0.05 MAX. 4 x 0.25 ±0.035 1) 2 3 Bottom view 4 x 0.35 ±0.035 4 1) 0.8 ±0.05 4 1 2 1 Pin 1 marking 1) Dimension applies to plated terminal 0.45 ±0.05 Foot Print For board assembly information please refer to Infineon website "Packages" 0.8 0.4 0.78 0.38 1.18 0.28 0.3 0.3 0.2 Copper Solder mask 0.22 Stencil apertures 0.28 Marking Layout (Example) BAR90-07LRH Type code Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 4 1.45 8 0.5 Pin 1 marking 1.05 0.38 0.4 0.42 1.2 0.4 1.2 ±0.05 3 0.75 ±0.05 8 2010-03-05 Package TSSLP-2-1 BAR90... 9 2010-03-05 BAR90... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 2010-03-05