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BAW78_07

BAW78_07

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BAW78_07 - Silicon Switching Diodes - Infineon Technologies AG

  • 数据手册
  • 价格&库存
BAW78_07 数据手册
BAW78.../BAW79... Silicon Switching Diodes • Switching applications • High breakdown voltage • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAW78D BAW79D  !  ! Type BAW78D BAW79D Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Peak forward current Package SOT89 SOT89 Configuration single common cathode Symbol VR VRM IF I FM I FM I FS I FSM Ptot 1 1 Tj T stg 150 -65 ... 150 Value 400 400 1 1 1 10 - Marking GD GH Unit V A Maximum Ratings at TA = 25°C, unless otherwise specified Surge forward current, t = 1 µs Non-repetitive peak surge forward current Total power dissipation BAW78D, TS ≤ 125°C BAW79D, TS ≤ 115°C Junction temperature Storage temperature 1Pb-containing W °C package may be available upon special request 1 2007-04-20 BAW78.../BAW79... Thermal Resistance Parameter Junction - soldering point 1) BAW78D BAW79D Symbol RthJS Value ≤ 25 ≤ 35 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics 400 V Breakdown voltage V(BR) I(BR) = 100 µA Reverse current VR = 400 V VR = 400 V, TA = 150 °C Forward voltage IF = 1 A IF = 2 A AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200mA, IR = 200mA, measured at IR = 20mA RL = 100Ω Test circuit for reverse recovery time D.U.T. IR - 1 50 µA VF CT trr , V 10 1 1.6 2 pF µs Puls generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50Ω Oscillograph ΙF EHN00019 Oscillograp: R = 50Ω, tr = 0.35ns C ≤ 1pF 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-04-20 BAW78.../BAW79... Reverse current IR = ƒ (TA) VR = 400V 10 5 nA BAW 78A...D EHB00097 Forward current IF = ƒ (VF) TA = 25°C 10 1 BAW 78A...D EHB00095 ΙR ΙF max A 10 4 5 10 0 10 3 5 typ. 10 -1 10 2 5 10 -2 10 1 0 50 100 ˚C TA 150 10 -3 0 1 V VF 2 Peak forward current IFM = ƒ (tp) Forward current IF = ƒ (T S) BAW78D 10 2 BAW 79A...D EHB00100 Ι FM A 10 1 D = 0.005 0.01 0.02 0.05 0.1 0.2 IF 1200 mA 1000 900 800 700 10 0 600 500 400 10 -1 300 tp tp D= T T 200 100 10-2 10-6 10-5 10-4 10-3 10-2 10-1 s 100 0 0 15 30 45 60 75 90 105 120 °C 150 t TS 3 2007-04-20 BAW78.../BAW79... Forward current IF = ƒ (T S) BAW79D 1200 mA 1000 900 800 IF 700 600 500 400 300 200 100 0 0 15 30 45 60 75 90 105 120 °C 150 TS 4 2007-04-20 Package SOT89 BAW78.../BAW79... Package Outline 4.5 ±0.1 45˚ 0.25 ±0.05 B 1.5 ±0.1 0.2 MAX. 10˚ MAX. 1) 1.6 ±0.2 2.5 ±0.1 1 ±0.1 4 ±0.25 0.15 1 2 3 1.5 0.35 ±0.1 0.45 +0.2 -0.1 3 0.2 B 0.15 M B x3 1) Ejector pin markings possible Foot Print 2.0 0.8 0.8 0.7 Marking Layout (Example) BAW78D Type code Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 8 0.2 1.2 1.0 2.5 Pin 1 2005, June Date code (YM) Manufacturer Pin 1 4.6 12 1 ±0.2 4.3 1.6 5 2.75 +0.1 -0.15 1) 2007-04-20 BAW78.../BAW79... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2007-04-20
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