BBY51

BBY51... Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY51 BBY51-02L BBY51-02W BBY51-03W 3 D1 D2 1 2 1 2 Type BBY51 BBY51-02L* BBY51-02W BBY51-03W Package SOT23 TSLP-2-1 SCD80 SOD323 Configuration common cathode single, leadless single single LS(nH) 2 0.4 0.6 1.8 Marking S3s II II H * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 7 20 -55 ... 125 -55 ... 150 Unit V mA °C 1 Dec-15-2003 BBY51... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 6 V VR = 6 V, T A = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT Symbol min. IR - Values typ. max. Unit nA 10 200 pF 5.05 3.4 2.7 2.5 5.4 4.2 3.5 3.1 1.75 1.78 0.5 0.37 5.75 5.2 4.6 3.7 2.2 2.2 0.7 Ω Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz CT1/C T4 C1V-C 3V C3V-C 4V rS 1.55 1.4 0.3 - Capacitance difference VR = 1 V, f = 1 MHz, VR = 4 V pF Capacitance difference VR = 3 V, f = 1 MHz, VR = 4 V Series resistance VR = 1 V, f = 1 GHz 2 Dec-15-2003 BBY51... Diode capacitance CT = ƒ (VR) f = 1MHz EHD07128 Temperature coefficient of the diode capacitance TCc = ƒ (VR) 10 -3 10 CT pF 8 1/°C 6 TCc 10 -4 10 -5 1 4 2 0 0 2 4 V VR 6 2 3 4 5 6 V 8 VR 3 Dec-15-2003