BBY56-03W

BBY56... Silicon Tuning Diode • Excellent linearity • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread BBY56-02W BBY56-03W 1 2 Type BBY56-02W BBY56-03W Parameter Diode reverse voltage Forward current Package SCD80 SOD323 Configuration single single Symbol LS(nH) Marking 0.6 66 1.8 6 red Value 10 20 -55 ... 150 -55 ... 150 Unit V mA °C Maximum Ratings at TA = 25°C, unless otherwise specified VR IF Top Tstg Operating temperature range Storage temperature 1 Jan-13-2004 BBY56... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 6 V VR = 6 V, T A = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz VR = 1 V, VR = 4 V, f = 1 MHz Series resistance VR = 1 V, f = 470 MHz rS CT1/CT3 2.15 2.53 3.3 0.25 Ω CT 37 22 14.8 40 15.8 12.1 43 25 16.8 pF Symbol min. IR - Values typ. max. Unit nA 5 100 2 Jan-13-2004 BBY56... Diode capacitance CT = ƒ (VR) f = 1MHz 100 pF Temperature coefficient of the diode capacitance TCc = ƒ (VR) f = 1 MHz 0.0012 1/K 80 70 0.001 0.0009 CT 60 50 40 0.0005 30 20 10 0 0 V TCc 0.0008 0.0007 0.0006 0.0004 0.0003 0.0002 1 2 3 5 0.0001 0 1 2 3 4 V 6 VR VR Reverse current IR = ƒ(VR) TA = Parameter 10 -9 A 125 °C 10 -10 85 °C IR 10 -11 60 °C 10 -12 25 °C 10 -13 1 2 3 V 5 VR 3 Jan-13-2004