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BCR169L3

BCR169L3

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BCR169L3 - PNP Silicon Digital Transistor - Infineon Technologies AG

  • 数据手册
  • 价格&库存
BCR169L3 数据手册
BCR169.../SEMB3 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7k Ω) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR169/F/L3 BCR169T/W C 3 BCR169S/U SEMB3 C1 6 B2 5 E2 4 R1 R1 TR1 R1 TR2 1 B 2 E EHA07180 1 E1 2 B1 3 C2 EHA07266 Type Marking Pin Configuration Package BCR169 BCR169F BCR169L3 BCR169S BCR169T BCR169U BCR169W SEMB3 WSs WSs WS WSs WSs WSs WSs WS 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - - - SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 May-18-2004 BCR169.../SEMB3 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR169, TS ≤ 102°C BCR169F, TS ≤ 128°C BCR169L3, TS ≤ 135°C BCR169S, T S ≤ 115°C BCR169T, TS ≤ 109°C BCR169U, TS ≤ 118°C BCR169W, TS ≤ 124°C SEMB3, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR169 BCR169F BCR169L3 BCR169S BCR169T BCR169U BCR169W SEMB3 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 15 100 200 250 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 133 ≤ 105 ≤ 300 °C Unit K/W 2 May-18-2004 BCR169.../SEMB3 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO I CBO h FE VCEsat Vi(off) Vi(on) R1 50 5 120 0.4 0.5 3.2 4.7 100 630 0.3 0.8 1.1 6.2 kΩ Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 40 V, IE = 0 nA V DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% fT Ccb - 200 3 - MHz pF 3 May-18-2004 BCR169.../SEMB3 DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) 10 3 Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 2 - mA h FE 10 2 10 1 10 1 IC 10 0 10 0 -1 10 0 1 10 10 mA 10 2 10 -1 0 0.1 0.2 0.3 0.4 V 0.55 IC VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) 10 2 Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 2 mA mA 10 1 10 1 IC IC 10 0 10 -1 -1 10 0 1 10 0 10 -1 10 -2 10 10 V 10 2 10 -3 0 1 2 3 V 5 Vi(on) Vi(off) 4 May-18-2004 BCR169.../SEMB3 Total power dissipation Ptot = ƒ(TS) BCR169 300 Total power dissipation Ptot = ƒ(TS) BCR169F 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) BCR169L3 300 Total power dissipation Ptot = ƒ(TS) BCR169S 300 mW mW Ptot 150 Ptot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS 5 May-18-2004 BCR169.../SEMB3 Total power dissipation Ptot = ƒ(TS) BCR169T 300 Total power dissipation Ptot = ƒ(TS) BCR169U 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) BCR169W 300 Total power dissipation Ptot = ƒ(TS) SEMB3 300 mW mW Ptot 150 Ptot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS 6 May-18-2004 BCR169.../SEMB3 Permissible Pulse Load RthJS = ƒ(tp ) BCR169 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR169 10 3 10 2 P totmax / P totDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BCR169F 10 2 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR169F 10 3 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 Ptotmax /PtotDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 7 May-18-2004 BCR169.../SEMB3 Permissible Puls Load RthJS = ƒ (tp) BCR169L3 10 2 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR169L3 10 3 Ptotmax/ P totDC 10 1 10 2 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BCR169S 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR169S 10 3 10 2 Ptotmax / PtotDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 8 May-18-2004 BCR169.../SEMB3 Permissible Puls Load RthJS = ƒ (tp) BCR169T 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR169T 10 3 10 2 P totmax / P totDC 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BCR169U 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR169U 10 3 Ptotmax / PtotDC 10 2 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 9 May-18-2004 BCR169.../SEMB3 Permissible Puls Load RthJS = ƒ (tp) BCR169W 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR169W 10 3 10 2 P totmax / P totDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 R thJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) SEMB3 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) SEMB3 10 3 10 2 Ptotmax / PtotDC RthJS 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 10 May-18-2004
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