BCR185U

BCR185U PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two ( galvanic) internal isolated Transistors with good matching in one package Built in bias resistor ( R1=10k , R2=47k )   C1 6 B2 5 E2 4 5 6 4 1For calculation of R thJA please refer to Application Note Thermal Resistance 1



3 2 1 VPW09197 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07173 TR2 R1 Type BCR185U Maximum Ratings Parameter Marking WNs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 6 20 100 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 118 °C Junction temperature Storage temperature Thermal Resistance mA mW °C Junction - soldering point 1) RthJS 130 K/W Jul-12-2001 BCR185U Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 6 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Resistor ratio R1 /R2 0.19 0.21 0.24 Input resistor Vi(on) R1 0.5 7 10 1.4 13 Vi(off) 0.5 1 VCEsat 0.3 hFE 70 IEBO 167 ICBO 100 V(BR)EBO V(BR)CBO 50 V(BR)CEO 50 typ. max. Unit V V nA µA V V k - AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 200 MHz 1) Pulse test: t < 300 s; D < 2% 2 Jul-12-2001

BCR185U DC Current Gain hFE = f (IC ) VCE = 5V (common emitter configuration) 10 3 Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20 10 2 mA hFE 10 2 IC 10 1 10 1 10 0 -1 10 0 1 10 10 mA 10 2 10 0 0.0 0.2 0.4 0.6 V 1.0 IC VCEsat Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration) 10 2 Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration) 10 1 mA mA 10 0 10 1 IC IC 10 -1 10 0 10 -2 10 -1 -1 10 0 1 10 10 V 10 2 10 -3 0.0 0.5 1.0 V 2.0 Vi(on) Vi(off) 3 Jul-12-2001 BCR185U Total power dissipation Ptot = f (TS ) 300 mW P tot 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC 10 2 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Jul-12-2001