BF770A

BF 770A NPN Silicon RF Transistor For IF amplifiers in TV-sat tuners and for VCR modulators 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 1T is measured on the collector lead at the soldering point to the pcb S

2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 770A Maximum Ratings Parameter Marking LSs 1=B Pin Configuration 2=E 3=C Package SOT-23 Symbol VCEO VCES VCBO VEBO IC IB 63 °C F) Ptot Tj TA Tstg Value 12 20 20 2 50 6 300 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS mA mW °C
290 K/W 1 Oct-26-1999 BF 770A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 10 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Oct-26-1999 BF 770A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F Ceb Cce Ccb fT Symbol min. 4.5 - Values typ. 6 0.58 0.23 1.7 max. 0.9 - Unit GHz pF dB 2 3.3 - Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain Gma |S21e|2 13.5 8.5 - f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2) 3 Oct-26-1999
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz , 12 6.5 -