BF775

BF 775 NPN Silicon RF Transistor Especially suitable for TV-Sat and UHF tuners 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 775 Maximum Ratings Parameter Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter 1T S is measured on the collector lead at the soldering point to the pcb 1 Nov-30-2000
Junction - soldering point

2 1 VPS05161 Marking LOs Pin Configuration 1=B 2=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS 3=C Package SOT-23 Value Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 48°C1) 15 20 20 2.5 30 4 280 150 -65 ... 150 -65 ... 150 V mA mW °C Value Unit 365 K/W BF 775 Electrical Characteristics Parameter Characteristics Symbol min. Values typ. max. Unit Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO ICES ICBO IEBO hFE 15 40 100 10 100 100 200 V µA nA µA - Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector -base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V 2 Nov-30-2000 BF 775 Electrical Characteristics Parameter AC Characteristics Symbol min. Values typ. max. Unit Transition frequency IC = 10 mA, VCE = 8 V, f = 500 MHz fT Ccb Cce Ceb F 3.5 - 5.5 0.38 0.2 0.5 0.6 - GHz pF Collector-base capacitance VCB = 10 V, f = 1 MHz Collector emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 6 V, ZS = ZSopt, f = 900 MHz f = 1.8 GHz dB 1 1.6 - Power gain, maximum available1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz f = 1.8 GHz Gma |S21e|2 16 10.5 - Transducer gain IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ma = |S21 /S12| (k-(k2 -1)1/2 ) 3 Nov-30-2000  - 13 7.5 -