BFP540FESD

BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier • Excellent ESD performance typical value 1000 V (HBM) • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET  45 - Line • Pb-free (ROHS compliant) package 1) • Qualified according AEC Q101 * Short term description 4 3 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP540FESD Maximum Ratings Parameter Marking AUs 1=B Pin Configuration 2=E 3=C 4=E Symbol VCEO 4.5 4 VCES VCBO VEBO IC IB Ptot Tj TA T stg 10 10 1 80 8 250 150 Package TSFP-4 Value Unit V - Collector-emitter voltage TA > 0°C TA ≤ 0°C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2) TS ≤ 80 °C Junction temperature Ambient temperature Storage temperature 1Pb-containing 2T mA mW °C -65 ... 150 -65 ... 150 package may be available upon special request S is measured on the collector lead at the soldering point to the pcb 2010-03-12 1 BFP540FESD Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 280 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V, pulse measured 1For Symbol min. V(BR)CEO ICES ICBO IEBO hFE 4.5 50 Values typ. 5 110 max. 10 100 10 170 Unit V µA nA µA - calculation of RthJA please refer to Application Note Thermal Resistance 2010-03-12 2 BFP540FESD Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 50 mA, VCE = 4 V, f = 1 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 3GHz Third order intercept point at output2) VCE = 2 V, I C = 20 mA, ZS = ZL = 50Ω, f = 1.8GHz 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz 1G ma 21 - 30 0.16 0.26 GHz pF Ccb Cce - 0.4 - Ceb - 0.55 - F G ms 0.9 1.3 20 1.4 - dB dB G ma - 14.5 - dB |S21e|2 15.5 IP 3 P-1dB 18 13 24.5 11 - dB dBm = |S21e / S12e| (k-(k²-1)1/2 ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz 2010-03-12 3 BFP540FESD SPICE Parameter For the SPICE model as well as for S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.model. Please consult our website and download the latest versions before actually starting your design. You find the BFP540FESD SPICE model in the internet in MWO- and ADS- tools very quickly and conveniently. The simulation data have been generated and verified using typical devices. The BFP540FESD SPICE model reflects the typical DC- and RF-performance with high accuracy. The SPICE model of BFP540FESD will be available in Q02 / 2010. 2010-03-12 4 Package TSFP-4 BFP540FESD Package Outline 1.4 ±0.05 0.2 ±0.05 1.2 ±0.05 0.2 ±0.05 4 3 1 2 0.2 ±0.05 0.5 ±0.05 0.5 ±0.05 0.15 ±0.05 Foot Print 0.35 0.45 0.5 0.5 Marking Layout (Example) Manufacturer 0.9 Pin 1 BFP420F Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 1.4 8 Pin 1 1.55 0.7 10˚ MAX. 0.8 ±0.05 0.55 ±0.04 2010-03-12 5 BFP540FESD Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2010-03-12 6