BFP640F

BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz • High maximum stable gain Gms = 23 dB at 1.8 GHz • Gold metallization for extra high reliability • 70 GHz fT -Silicon Germanium technology • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 * Short term description Top View 4 3 3 4 1 2 XYs 1 2 Direction of Unreeling ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP640F 1Pb-containing Marking R4s 1=B Pin Configuration 2=E 3=C 4=E - Package TSFP-4 package may be available upon special request 2007-05-31 1 BFP640F Maximum Ratings Parameter Collector-emitter voltage TA > 0°C TA ≤ 0°C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 92°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2) Symbol RthJS Value ≤ 290 Unit K/W Tj TA T stg 150 -65 ... 150 -65 ... 150 °C VCES VCBO VEBO IC IB Ptot Symbol VCEO 4 3.7 13 13 1.2 50 3 200 mW mA Value Unit V Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 30 mA, VCE = 3 V, puls measured 1T Symbol min. V(BR)CEO ICES ICBO IEBO hFE 4 110 Values typ. 4.5 180 max. 30 100 3 270 Unit V µA nA µA - S is measured on the collector lead at the soldering point to the pcb 2For calculation of R thJA please refer to Application Note Thermal Resistance 2007-05-31 2 BFP640F Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 5 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz Transducer gain IC = 30 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz f = 6 GHz Third order intercept point at output2) VCE = 3 V, I C = 30 mA, ZS =ZL=50 Ω, f = 1.8 GHz 1dB Compression point at output IC = 30 mA, VCE = 3 V, ZS =ZL=50 Ω, f = 1.8 GHz 1/2 ma = |S 21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e | 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 30 - 40 0.09 0.2 GHz pF Ccb Cce - 0.18 - Ceb - 0.5 - F G ms 0.65 1.2 23 - dB dB G ma - 12 - dB |S21e|2 IP 3 P-1dB 20.5 10 27.5 13.5 - dB dBm 2007-05-31 3 BFP640F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = TITF1 0.22 1000 2 2 1.8 2.707 227.6 1.8 0.4 0.6 0.2 0.27 3 2 -0.0065 fA V V Ω fF ps A V ns - - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF = TITF2 450 0.15 55 3.8 3.129 0.6 0.8 10 0 0.5 93.4 -1.42 0.8 7.291E-11 1.0E-5 A mA Ω V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.025 21 1 400 1.522 3.061 0.3 1.5 67.43 1 0.6 1.078 298 fA fA mA Ω V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: 0.22 LBO = 0.28 LEO = 0.22 LCO = LBI = 0.42 LEI = 0.26 LCI = 0.35 34 CBE = 2 CBC = 33 CCE = KBO-EO =0.1 KBO-CO =0.01 KEO-CO =0.11 KCI-EI = 0.2 KBI-CI = KBI-EI = RLBI = RLEI = RLCI = -0.08 -0.05 0.15 0.11 0.13 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com nH nH nH nH nH nH fF fF fF Ω Ω Ω Valid up to 6GHz 2007-05-31 4 BFP640F Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 200 mW 10 3 160 K/W 120 100 80 60 40 20 0 0 90 105 120 °C RthJS 140 Ptot 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 15 30 45 60 75 150 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 1 Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 0.25 Ptotmax / PtotDC pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 CCB s 0 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 0 2 4 6 8 10 V 14 tp VCB 2007-05-31 5 BFP640F Third order Intercept Point IP3=ƒ(IC) (Output, ZS=ZL=50Ω) Transition frequency fT= ƒ(IC) f = 1GHz VCE = parameter 45 GHz VCE = parameter, f = 1.8 GHz 30 dBm 4V 3V 24 21 35 3V IP3 30 18 15 fT 2V 25 20 12 9 1V 2V 15 10 1V 6 3 0 0 mA 5 0.5V 10 20 30 40 60 0 0 10 20 30 40 mA 60 IC IC Power gain Gma, Gms = ƒ(IC) VCE = 3V f = parameter 30 dB 0.9 Power Gain Gma, Gms = ƒ(f), |S21|² = f (f) VCE = 3V, IC = 30mA 55 dB 26 24 22 20 18 16 4 1.8 45 40 35 30 25 20 15 10 mA |S21|² G 2.4 3 G Gms 14 12 10 8 0 10 20 30 40 5 6 Gma 60 5 0 1 2 3 4 GHz 6 IC f 2007-05-31 6 BFP640F Power gain Gma, Gms = ƒ (VCE) IC = 30mA f = parameter 30 dB 0.9 2.5 Noise figure F = ƒ(I C) VCE = 3V, ZS = ZSopt 24 22 20 1.8 2.4 3 f = 6GHz 2 f = 5GHz f = 4GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz G 18 16 14 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5 V 1.5 4 5 6 F [dB] 1 0.5 4.5 0 0 10 20 I [mA] c VCE 30 40 50 Noise figure F = ƒ(IC ) VCE = 3V, f = 1.8 GHz Noise figure F = ƒ(f) VCE = 3V, ZS = Z Sopt 2.5 2 1.8 2 1.6 1.4 1.5 F [dB] Z = 50Ω S 1.2 F [dB] Z =Z S Sopt 1 1 0.8 0.6 I = 30mA C 0.5 0.4 IC = 5.0mA 0.2 0 0 10 20 I [mA] c 0 30 40 50 0 1 2 3 f [GHz] 4 5 6 7 2007-05-31 7 BFP640F Source impedance for min. noise figure vs. frequency VCE = 3 V, I C = 5 mA/ 30 mA 1 1.5 0.5 0.4 0.3 0.2 0.1 0 −0.1 6GHz 0.1 3GHz 4GHz 0.2 0.3 0.4 0.5 5GHz 6GHz 1 2.4GHz 1.8GHz 0.9GHz 1.5 2 3 45 Ic = 5.0mA 2 3 4 5 10 −10 −5 −4 −0.4 −0.5 −1.5 −1 I = 30mA c −0.2 −0.3 −3 −2 2007-05-31 8 Package TSFP-4 BFP640F Package Outline 1.4 ±0.05 0.2 ±0.05 1.2 ±0.05 0.2 ±0.05 4 3 1 2 0.2 ±0.05 0.5 ±0.05 0.5 ±0.05 0.15 ±0.05 Foot Print 0.35 0.45 0.5 0.5 Marking Layout (Example) Manufacturer 0.9 Pin 1 BFP420F Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 1.4 8 Pin 1 1.55 0.7 10˚ MAX. 0.8 ±0.05 0.55 ±0.04 2007-05-31 9 BFP640F Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2007-05-31 10