0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BFR106_10

BFR106_10

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BFR106_10 - NPN Silicon RF Transistor - Infineon Technologies AG

  • 数据手册
  • 价格&库存
BFR106_10 数据手册
BFR106 NPN Silicon RF Transistor • High linearity low noise RF transistor • 22dBm OP1dB and 31dBm OIP3 @ 900MHz,8V,70mA • For UHF/VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply voltage • Pb-free (RoHS compliant) package • Qualified according AEC Q101 3 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR106 Parameter Marking R7s Pin Configuration 1=B 2=E Symbol VCEO 3=C Value Package SOT23 Unit Maximum Ratings at TA = 25 °C, unless otherwise specified Collector-emitter voltage, TA = 25°C TA = -55°C V 16 15 Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 73 °C VCES VCBO VEBO IC IB Ptot TJ TStg Symbol RthJS 20 20 3 210 21 700 150 -55 ... 150 Value ≤ 110 Unit mA mW °C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) 1T 2For K/W S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note AN077 Thermal Resistance 1 2010-12-03 BFR106 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Symbol min. Values typ. max. Unit Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO ICES 15 - - V µA Collector-emitter cutoff current VCE = 20 V, VBE = 0 VCE = 10 V, VBE = 0 ICBO IEBO hFE 0.001 1 1 100 1 0.03 30 30 140 nA Collector-base cutoff current VCB = 10 V, IE = 0 70 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V, pulse measured 2 2010-12-03 BFR106 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz NFmin 1.8 3 dB Ceb 3.9 Cce 0.27 Ccb 0.85 1.2 pF 3.5 5 GHz 3 2010-12-03 BFR106 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. AC Characteristics (verified by random sampling) Power gain, maximum available1) IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz Transducer gain IC = 70 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz IC = 70 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 GHz Third order intercept point at output2) VCE = 8 V, IC = 70 mA, f = 0.9 GHz , ZS=ZL =50Ω 1dB Compression point IC = 70 mA, VCE = 8 V, ZS =ZL =50Ω, f = 0.9 GHz 1/2 ma = |S21e / S12e | (k-(k²-1) ) 2IP value depends on termination of all intermodulation frequency components. 3 1G Unit max. dB typ. Gma |S21e|2 IP3 10.5 5 31 13 8.5 - dB dBm P-1dB - 22 - Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 4 2010-12-03 BFR106 Total power dissipation P tot = ƒ(TS) 800 mW 600 Ptot 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 TS 5 2010-12-03 BFR106 SPICE Parameter (Gummel-Poon) For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. 6 2010-12-03 Package SOT23 BFR106 Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 0...8˚ A 5 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 7 2010-12-03 BFR106 Datasheet Revision History: 3 Dezember 2010 This datasheet replaces the revisions from 30 March 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revision: 30 March 2007 Page Subject (changes since last revision) 1 Datasheet has final status 2 Typical values for leakage currents included, values for maximum leakage currents reduced 3 Spice Parameter removed from the datasheet, respective link to the internet site added 8 2010-12-03 BFR106 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2010-12-03
BFR106_10 价格&库存

很抱歉,暂时无法提供与“BFR106_10”相匹配的价格&库存,您可以联系我们找货

免费人工找货