BFR193T

BFR193T NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA



2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR193T Maximum Ratings Parameter Marking RCs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SC75 Value 12 20 20 2 80 10 280 150 mW °C mA Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 91 °C 1) -65 ... 150 -65 ... 150
210 K/W 1 Aug-09-2001 BFR193T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Aug-09-2001 BFR193T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , 13.5 8 IC = 30 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz 1G ma Unit max. 1 dB GHz pF typ. 7.5 0.68 0.24 1.8 fT Ccb Cce Ceb F 6 - Gma - 1.3 2.1 - 16.5 10.5 - = |S21 / S12 | (k-(k2-1)1/2 )
3 Aug-09-2001 BFR193T SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.2738 24 1.935 3.8742 0.94371 1 1.1824 18.828 0.96893 1.1828 1.0037 0 3 fA V V - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 125 0.26949 14.267 0.037925 1.8368 0.76534 0.70276 0.69477 0 0.30002 0 0 0.72063 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.95341 10.627 1.4289 0.037409 0.91763 0.11938 0.48654 0.8 935.03 0.053563 0.75 1.1 300 fA fA mA - fF ps V deg fF - V fF V eV K mA V ns - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = C4 C1 L2 B L3 C 0.762 0.706 0.382 62 84 180 7 40 48 L BO = L EI = L EO = L CI = L CO = C3 C5 C’ B’ Transistor Chip E’ C6 C2 C BE = C CB = C CE = L1 fF fF E EHA07524 Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-09-2001
nH nH nH fF fF fF

BFR193T Total power dissipation Ptot = f (TS ) 300 mW P tot 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 RthJS 10 2 Ptotmax / PtotDC 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Aug-09-2001 BFR193T Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 1.2 GHz pF 9 8V 5V 7 0.8 6 Ccb fT 5 0.6 4 2V 3V 0.4 3 2 1V 0.7V 0.2 1 0 0 0 0 5 10 15 V 25 10 20 30 40 50 60 70 mA 90 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 19 dB Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 15 8V 5V dB 8V 5V 15 G 3V G ma 13 2V 9 3V 11 6 2V 9 1V 3 1V 7 0.7V 0.7V 5 0 10 20 30 40 50 60 70 mA 90 0 0 10 20 30 40 50 60 70 mA 90 IC IC 6 Aug-09-2001 BFR193T Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 20 dB Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 35 IC=30mA 0.9GHz dBm 8V 5V 16 0.9GHz 14 IP 3 G 12 10 1.8GHz 25 1.8GHz 8 6 4 2 0 0 V 20 15 1V 1 2 3 4 5 6 7 9 10 0 10 20 30 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 45 dB Power Gain |S21|2= f(f) V CE = Parameter 36 IC=30mA dBm IC =30mA 35 24 30 G S21 25 20 15 18 12 6 10 5 0 0 8V 8V 5V 1V 1 2 3 4 5 GHz 0 7 -6 0 1 2 3 4 f 7
3V 2V 40 mA 60 IC 5V 1V 5 GHz 7 f Aug-09-2001