BFR360L3

BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 * Short term description 1 2 3 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR360L3 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2) TS ≤ 104°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 3) 1Pb-containing 2T 3For Marking FB Pin Configuration 1=B 2=E 3=C Package TSLP-3-1 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg Symbol RthJS Value 6 15 15 2 35 4 210 150 -65 ... 150 -65 ... 150 Value ≤ 220 Unit V mA mW °C Unit K/W package may be available upon special request is measured on the collector lead at the soldering point to the pcb S calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-03-30 BFR360L3 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 15 mA, VCE = 3 V, pulse measured hFE 90 120 160 IEBO 1 µA ICBO 100 nA ICES 10 µA V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit 2 2007-03-30 BFR360L3 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 15 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz Power gain, maximum available1) IC = 15 mA, VCE = 3 V, Z S = ZSopt , ZL = ZLopt , f = 1.8 GHz IC = 15 mA, VCE = 3 V, Z S = ZSopt , ZL = ZLopt , f = 3 GHz Transducer gain IC = 15 mA, VCE = 3 V, Z S = ZL = 50Ω , f = 1.8 GHz f = 3 GHz Third order intercept point at output2) VCE = 3 V, I C = 15 mA, Z S=ZL=50 Ω, f = 1.8 GHz 1dB Compression point at output IC = 15 mA, VCE = 3 V, Z S=ZL=50 Ω, f = 1.8 GHz 1/2 ma = |S 21e / S12e| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 11 - 14 0.26 0.4 GHz pF Ccb Cce - 0.15 - Ceb - 0.42 - F min G ma |S 21e|2 IP 3 P-1dB 13.5 9 24 9 16 11.5 1 1.3 - dB dB dBm 3 2007-03-30 BFR360L3 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 0.0689 20 2.4 60 1.4 7.31 400 9.219 1.336 0.864 1.92 0 0 1 fA V V Ω fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF = 147 77.28 6 0.3 0.1 78.2 1.3 0.115 0 0.486 0 0 0.954 1E-14 mA A Ω mΩ V deg fF NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = NK = 1 150 1 20 74 0.35 0.5 0.198 473 0.129 0.75 1.11 0.5 fA fA µA Ω V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: C4 C1 L2 B C7 R1 L3 C B’ Transistor Chip E’ C’ C6 C2 L1 C3 C5 L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = C7 = R1 = 0.575 0.575 0.275 33 28 131 8 8 24 300 204 nH nH nH fF fF fF fF fF fF fF Ω Valid up to 6GHz E For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com EHA07536 4 2007-03-30 BFR360L3 Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 240 mW 10 3 k/W 180 150 RthJS 10 2 Ptot 120 90 60 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 30 10 1 -7 10 0 0 15 30 45 60 75 90 105 120 °C 150 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 1 Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 0.8 pF Ptotmax /PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.6 Ccb -3 -2 0.5 0.4 0.3 0.2 0.1 10 0 -7 10 10 -6 10 -5 10 -4 10 10 s 10 0 0 0 2 4 6 8 10 12 V 16 tp VCB 5 2007-03-30 BFR360L3 Third order Intercept Point IP3=ƒ(IC) (Output, ZS=ZL=50Ω) Transition frequency fT = ƒ(IC) f = 1 GHz VCE = parameter 18 GHz VCE = parameter, f = 1.8 GHz 30 dBm 14 20 5V IP3 12 15 fT 3V 2V 10 10 5 6V 4V 3V 2V 1V 8 1V 6 4 0.7V 0 2 0 0 -5 0 5 10 15 20 25 30 mA 40 5 10 15 20 25 30 A 40 IC IC Power gain Gma, Gms = ƒ(IC) VCE = 3 V f = parameter in GHz 24 dB 0.9GHz Power gain Gma, Gms = ƒ(IC) f = 1.8GHz VCE = parameter 18 20 18 dB 5V 3V G 16 1.8GHz G 14 2V 14 2.4GHz 12 3GHz 12 1V 4GHz 10 8 6 4 0 8 0 10 0.7V 5 10 15 20 25 30 35 dB 45 5 10 15 20 25 30 mA 40 IC IC 6 2007-03-30 BFR360L3 Power Gain Gma, Gms = ƒ(f) VCE = parameter 50 dB Ic=15mA Power Gain |S21|² = ƒ(f) VCE = parameter 40 dB Ic = 15mA 40 30 |S21|2- 35 G 30 25 20 15 5V 2V 1V 0.7V 25 5V 2V 1V 0.7V 20 15 10 10 5 0 0 5 1 2 3 4 GHz 6 0 0 1 2 3 4 GHz 6 f f Power Gain Gma, Gms = ƒ(VCE): f = parameter 24 dB Ic = 15mA 0.9GHz 20 18 1.8GHz G 16 14 12 10 8 6 4 0 2.4GHz 3GHz 4GHz 1 2 3 4 V 6 VCE 7 2007-03-30 Package TSLP-3-1 BFR360L3 Package Outline Top view Bottom view 0.6 ±0.05 0.5 ±0.035 0.65 ±0.05 1) 0.05 MAX. 3 2 1 ±0.05 3 1 2 1 2 x 0.25 ±0.035 0.45 1) Pin 1 marking 0.35 ±0.05 2 x 0.15 ±0.035 1) 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.275 0.6 0.35 0.35 0.945 0.3 1 0.355 0.2 0.225 0.225 0.15 Copper Solder mask R0.1 0.2 0.17 Stencil apertures Marking Layout (Example) BFR193L3 Type code Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 4 0.5 1.16 Pin 1 marking 0.76 8 0.315 0.25 ±0.035 0.4 +0.1 1) 8 2007-03-30 BFR360L3 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2007-03-30