BFS483

BFS483 NPN Silicon RF Transistor 4 For low-noise, high-gain broadband amplifier at collector currents from 2 mA to 28 mA f T = 8 GHz F = 1.2 dB at 900 MHz Two (galvanic) internal isolated Transistors in one package C1 6 E2 5 B2 4 5 6 ESD: Electrostatic discharge sensitive device, observe handling precaution! Junction temperature Ambient temperature Storage temperature Thermal Resistance 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1
Junction - soldering point2)



2 1 3 VPS05604 TR2 TR1 1 B1 2 E1 3 C2 EHA07196 Type BFS483 Maximum Ratings Parameter Marking RHs Pin Configuration Package 1=B 2=E 3=C 4=B 5=E 6=C SOT363 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 12 20 20 2 65 5 450 150 -65 ... 150 -65 ... 150 V mA mW °C 40 °C 1) RthJS 245 K/W Jun-27-2001 BFS483 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Jun-27-2001 BFS483 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Transducer gain |S21e|2 , 15 9.5 IC = 15 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz 1G ms 2G ma Symbol min. fT Ccb Cce Ceb F Gms 6 - Values typ. 8 0.4 0.13 1 max. 0.6 - Unit GHz pF dB 1.2 2 19 - Gma - 12.5 - = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2)  3 Jun-27-2001 BFS483 Total power dissipation Ptot = f (TS ) 500 mW 400 350 300 250 200 150 100 50 0 0 120 °C P tot 20 40 60 80 100 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 0.5 0.2 0. 1 0.05 0.2 0.1 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Jun-27-2001 BFS483 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) V CE = Parameter f = 1MHz 1.0 pF GHZ 8 0.8 6 0.7 Ccb 8V fT 0.6 0.5 0.4 0.3 5 4 5V 3V 2V 3 2 0.2 0.1 0.0 0 1 1V 0.7V 4 8 12 16 V 22 0 0 10 20 30 40 50 60 mA 75 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 20 dB Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 14 dB 16 14 8V 8V 5V 10 G 12 10 8 G 3V 2V 5V 8 3V 6 1V 2V 6 0.7V 4 4 2 2 0.7V 1V 0 0 10 20 30 40 50 60 mA 75 0 0 10 20 30 40 50 60 mA 75 IC IC 5 Jun-27-2001 BFS483 Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 20 dB Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz IC=15mA 0.9GHz 30 8V dBm 16 14 0.9GHz 26 24 G 1.8GHz IP 3 12 10 8 1.8GHz 22 20 18 2V 3V 16 6 4 2 0 0 14 12 1V 10 1 2 3 4 5 6 7 8 V 10 8 0 4 8 12 16 20 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 32 dB Power Gain |S21|2= f(f) V CE = Parameter 30 IC=15mA dB IC =15mA 28 26 24 S21 G 22 20 18 16 14 12 10 8 6 4 0.0 0.5 1.0 1.5 2.0 2.5 8V 1V 0.7V GHz 20 15 10 5 1V 0.7V 3.5 0 0.0 0.5 1.0 1.5 2.0 f 6
5V 24 28 32 mA 38 IC 8V 2.5 GHZ 3.5 f Jun-27-2001