BFY640B

B FY6 40 HiRel NPN Silicon Germanium RF Transistor      4 HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz Hermetically sealed microwave package 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Pin Configuration 1 2 E 3 B 4 E Package BFY640B - C Micro-X Maximum Ratings Parameter Collector-emitter voltage T a > 0 °C T a ≤ 0 °C Collector-base voltage Emitter-base voltage Collector current Base current Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point Notes.: 1) For TA > 25°C the derating of IC has to be considered. Nomograms will be available on request. 2) TS is measured on the emittter lead at the soldering point to the pcb. 2) 1) Symbol VCEO Values 4.0 3.7 Unit V V V V mA mA C C C VCBO VEBO IC IB Tj Top Tstg 13 1.2 50 3 175 -65...+175 -65...+175 Rth JS 325 K/W I FAG IMM RPD D HI R 1 of 3 V 1 , J une 2 0 1 0 B FY6 40 Electrical Characteristics at TA=25°C; unless otherwise specified Parameter Symbol min. DC Characteristics Collector-base cutoff current VCB = 5 V, IE = 0 Collector-emitter cutoff current 1) VCE = 4.0 V, IB = 0.1 µA Emitter-base cuttoff current VEB = 1.2 V, IC = 0 DC current gain IC = 30 mA, VCE = 3 V hFE 135 180 250 IEBO 5 A ICEX 200 µA ICBO 10 µA Values typ. max. Unit AC Characteristics Collector-base capacitance VCB = 2 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 2 V, VBE = vbe = 0, f = 1 MHz Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz Noise Figure (ZS = Zsopt) IC = 5 mA, VCE = 3 V, f = 1.8 GHz IC = 5 mA, VCE = 3 V, f = 6.0 GHz Insertion power gain (ZS = ZL = 50 ) IC = 30 mA, VCE = 3 V, f = 1.8 GHz IC = 30 mA, VCE = 3 V, f = 6.0 GHz Power gain (ZS = ZSopt , ZL = ZLopt) IC = 30 mA, VCE = 3 V, f = 1.8 GHz Power gain (ZS = ZSopt , ZL = ZLopt) IC = 30 mA, VCE = 3 V, f = 6.0 GHz Notes.: 1) This Test assures V(BR)CE0 > 4.0V CCB CCE CEB F - 0.07 - pF - 0.45 - pF - 0.6 - pF dB 0.8 1.1 dB 22.5 12.5 24 dB dB 14 - |S21e|2 Gms2) Gma2) 2) Gma  S 21 ( k  k 2  1) , S12 Gms  S 21 S12 2 of 3 V 1 , J une 2 0 1 0 I FAG IMM RPD D HI R B FY6 40 Micro-X Package 4 Edition 2010-06 3 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2010 All Rights Reserved. 1 2 Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. I FAG IMM RPD D HI R 3 of 3 V 1 , J une 2 0 1 0