BGA614_08

D a t a S he et , R e v . 2 . 1 , M a r . 2 00 8 B G A 6 14 S i l i c on G e r m a n i u m B r o a d b a n d M M IC A m pl i f i e r S m a l l S i g n a l D i s c r et e s Edition 2008-03-28 Published by Infineon Technologies AG, 81726 München, Germany © Infineon Technologies AG 2008. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA614 BGA614, Silicon Germanium Broadband MMIC Amplifier Revision History: 2008-03-28, Rev. 2.1 Previous Version: 2003-11-04 Page All 5 7-8 All Subjects (major changes since last revision) New Chip Version with integrated ESD protection Electrical Characteristics slightly changed Figures updated Document layout change Trademarks SIEGET® is a registered trademark of Infineon Technologies AG. Data Sheet 3 Rev. 2.1, 2008-03-28 BGA614 Silicon Germanium Broadband MMIC Amplifier 1 Silicon Germanium Broadband MMIC Amplifier Feature • Cascadable 50 Ω-gain block • 3 dB-bandwidth: DC to 2.4 GHz with 19 dB typical gain at 1.0 GHz • Compression point P-1dB = 12 dBm at 2.0 GHz • Noise figure F50Ω = 2.1 dB at 2.0 GHz • Absolute stable • 70 GHz fT - Silicon Germanium technology • 1 kV HBM ESD protection (Pin-to-Pin) • Pb-free (RoHS compliant) package1) 3 4 1 2 SOT343 Applications • Driver amplifier for GSM/PCS/CDMA/UMTS • Broadband amplifier for SAT-TV & LNBs • Broadband amplifier for CATV 1) Pb-containing package may be available upon special request Out, 3 IN, 1 GND, 2,4 Figure 1 Description BGA614 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of 40 mA The BGA614 is based on Infineon Technologies’ B7HF Silicon Germanium technology. Type BGA614 Package SOT343 Marking BOs Pin connection Note: ESD: Electrostatic discharge sensitive device, observe handling precaution Data Sheet 4 Rev. 2.1, 2008-03-28 BGA614 Electrical Characteristics Maximum Ratings Table 1 Parameter Device voltage Device current Current into pin In Input power 1) 2) Maximum ratings Symbol Limit Value 3 80 0.7 10 240 150 -65... 150 -65... 150 1000 Unit V mA mA dBm mW °C °C °C V Total power dissipation, TS < 102 °C Junction temperature Ambient temperature range Storage temperature range VD ID Iin Pin Ptot TJ TA TSTG ESD capability all pins (HBM: JESD22-A114) VESD 1)Valid for ZS = ZL = 50 Ω, VCC = 5 V, RBias = 62 Ω 2) TS is measured on the ground lead at the soldering point Note: All Voltages refer to GND-Node Thermal resistance Table 2 Parameter 1) Thermal resistance Symbol Value Unit K/W Junction - soldering point RthJS 200 1) For calculation of RthJA please refer to Application Note Thermal Resistance 2 Electrical Characteristics Electrical characteristics at TA = 25 °C (measured in test circuit specified in Figure 2) VCC = 5 V, RBias = 62 Ω, Frequency = 2 GHz, unless otherwise specified Table 3 Parameter Insertion power gain Electrical Characteristics Symbol Min. Values Typ. 19.8 19.0 17.5 Noise figure (ZS = 50 Ω) Max. dB dB dB dB dB dB dBm dBm dB dB mA Rev. 2.1, 2008-03-28 Unit Note / Test Condition |S21| 2 F50Ω 1.8 2.0 2.1 f = 0.1 GHz f = 1.0 GHz f = 2.0 GHz f = 0.1 GHz f = 1.0 GHz f = 2.0 GHz Output power at 1 dB gain compression Output third order intercept point Input return loss Output return loss Total device current Data Sheet P-1dB OIP3 RLin RLout ID 5 12 25 18 20 40 BGA614 Electrical Characteristics Refer ence Plane V CC = 5V In Bias-T In GND ID GND Out VD RBias = 62Ω Bias-T Out Refer ence Plane Top View Caution: Device Voltage V a t Pin Out! D V D = V CC - R Bias I D BGA614_Test_Circuit.vsd Figure 2 Test Circuit for Electrical Characteristics and S-Parameter Data Sheet 6 Rev. 2.1, 2008-03-28 BGA614 Measured Parameters 3 Measured Parameters Power Gain |S21|2, Gma = f(f) VCC = 5V, R Bias = 62Ω, I C = 40mA 22 G 20 18 16 ma Matching |S |, |S | = f(f) 11 22 V = 5V, R = 62Ω, I = 40mA CC Bias C 0 −5 |S21| 2 [dB] 14 12 10 8 6 4 2 0 −1 10 0 1 |S |, |S | [dB] −10 S −15 S11 −20 22 ma |S | , G 2 21 11 22 −25 10 10 −30 −1 10 10 0 10 1 Frequency [GHz] Frequency [GHz] Power Gain |S21| = f(ID) f = parameter in GHz 22 20 18 16 14 1 2 3 4 6 10 8 6 4 2 0 0 20 40 60 80 8 Output Compression Point P−1dB = f(ID), f = 2GHz 20 18 16 14 [dBm] −1dB |S | [dB] 12 10 8 6 4 2 0 0 20 40 60 80 12 2 21 ID [mA] P ID [mA] Data Sheet 7 Rev. 2.1, 2008-03-28 BGA614 Measured Parameters Device Current I D = f(VCC) = parameter in Ω R Bias 80 0 70 60 68 50 16 27 47 Device Current I D = f(TA) = parameter in Ω V = 5V,R CC Bias 50 48 46 44 62 56 [mA] 40 30 [mA] 100 150 D 42 40 38 36 34 68 I D 20 10 0 I 32 0 1 2 3 4 5 6 30 −40 −20 0 20 40 60 80 VCC [V] TA [°C] Noise figure F = f(f) VCC = 5V, R Bias = 62Ω, ZS = 50Ω T = parameter in °C A 3 +80°C +25°C 2 2.5 F [dB] −20°C 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 Frequency [GHz] Data Sheet 8 Rev. 2.1, 2008-03-28 BGA614 Package Information 4 Package Information 0.9 ±0.1 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M 0.1 MAX. 0.1 A 2 0.6 +0.1 -0.05 0.1 MIN. 0.15 -0.05 0.2 M +0.1 A GPS05605 Figure 3 Package Outline SOT343 4 0.2 Pin 1 2.15 2.3 8 1.1 Figure 4 Tape for SOT343 Data Sheet 9 1.25 ±0.1 2.1 ±0.1 Rev. 2.1, 2008-03-28