BGA622

D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG, 81726 München, Germany © Infineon Technologies AG 2008. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA622 BGA622, Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Revision History: 2008-04-14, Rev. 2.2 Previous Version: 2005-11-16 Page All Subjects (major changes since last revision) Document layout change Trademarks SIEGET® is a registered trademark of Infineon Technologies AG. Data Sheet 3 Rev. 2.2, 2008-04-14 BGA622 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection 1 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Feature • High gain |S21|2 = 15.0 dB at 1.575 GHz |S21|2 = 14.2 dB at 1.9 GHz |S21|2 = 13.6 dB at 2.14 GHz • Low noise figure, NF = 1.0 dB at 1.575 GHz • Operating frequency range 0.5 - 6 GHz • Typical supply voltage: 2.75 V • On/Off-Switch • Output-match on chip, input pre-matched • Low part count • 70 GHz fT - Silicon Germanium technology • 2 kV HBM ESD protection (Pin-to-Pin) • Pb-free (RoHS compliant) package 3 4 1 2 SOT343 Applications • LNA for GSM, GPS, DCS, PCS, UMTS, Bluethooth, ISM and WLAN Figure 1 Description Pin connection The BGA622 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology B7HF. In order to provide the LNA in a small package the out-pin is simultaneously used for RF out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level of 0 V or an open switches the device on and a DC level of VCC switches the device off. While the device is switched off, it provides an insertion loss of 24 dB together with a high IIP3 up to 20 dBm. Type BGA622 Package SOT343 Marking BXs Note: ESD: Electrostatic discharge sensitive device, observe handling precaution Data Sheet 4 Rev. 2.2, 2008-04-14 BGA622 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Maximum Ratings Table 1 Parameter Voltage at pin VCC Voltage at pin Out Current into pin In Current into pin Out Current into pin VCC RF input power Total power dissipation, TS < 139 °C Junction temperature Ambient temperature range Storage temperature range ESD capability all pins (HBM: JESD22-A114) 1) Maximum ratings Symbol Limit Value 3.5 4 0.1 1 10 6 35 150 -65... 150 -65... 150 2000 Unit V V mA mA mA dBm mW °C °C °C V VCC Vout Iin Iout IVcc Pin Ptot TJ TA TSTG VESD 1) TS is measured on the ground lead at the soldering point Note: All Voltages refer to GND-Node Thermal resistance Table 2 Parameter Thermal resistance Symbol Value Unit K/W RthJS 300 Junction - soldering point1) 1) For calculation of RthJA please refer to Application Note Thermal Resistance Data Sheet 5 Rev. 2.2, 2008-04-14 BGA622 Electrical Characteristics 2 Electrical Characteristics Electrical characteristics at TA = 25 °C (measured according to Figure 2) VCC = 2.75 V, Frequency = 1.575 GHz, unless otherwise specified 2.1 Table 3 Parameter Electrical Characteristics Symbol Min. Values Typ. 15.0 -27 5 12 1.00 0 20 -16.5 130 4.0 0 260 5.8 420 7.8 0.8 Max. dB dB dB dB dB dBm dBm dBm µA mA V Unit Note / Test Condition Insertion power gain Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Noise figure (ZS = 50 Ω) Input third order intercept point (On-State) 1) |S21|2 |S21|2 RLin RLout F50Ω IIP3 IIP3 Input third order intercept point1) (Off - State) Total device off current Total device on current On / Off switch control voltage f = 0.1 GHz ∆f = 1 MHz, PIN = -28 dBm ∆f = 1 MHz, PIN = -8 dBm VCC = 2.75 V, Vout = VCC VCC = 2.75 V VCC = 2.75 V ON-Mode: Vout = Von Input power at 1 dB gain compression P-1dB Itot-off Itot-on Von Voff 2.0 3.5 V VCC = 2.75 V OFF-Mode: Vout = Voff 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz Data Sheet 6 Rev. 2.2, 2008-04-14 BGA622 Electrical Characteristics 2.2 Electrical characteristics at TA = 25 °C (measured according to Figure 2) VCC = 2.75 V, Frequency = 2.14 GHz, unless otherwise specified Table 4 Parameter Electrical Characteristics Symbol Min. Values Typ. 13.6 -24 7 10 1.05 3 20 Max. dB dB dB dB dB dBm dBm ∆f = 1 MHz, PIN = -28 dBm ∆f = 1 MHz, PIN = -8 dBm Unit Note / Test Condition Insertion power gain Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Noise figure (ZS = 50 Ω) Input third order intercept Point (On-State) 1) |S21| |S21|2 RLin RLout F50Ω IIP3 IIP3 2 Input third order intercept point1) (Off-State) Input power at 1 dB gain compression P-1dB -13 dBm 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz DC, 2.75V Out, 50 Ω 150pF In, 50 Ω BGA622_S_Parameter_Circuit.vsd Figure 2 S-Parameter Test Circuit (loss-free microstrip test-fixture) Data Sheet 7 Rev. 2.2, 2008-04-14 BGA622 Electrical Characteristics DC, 2.75V Out 47pF (DC-Block) 150pF RFC On/Off Switch DC, 2.75V 2.2nH (for improved input match) 47pF (DC-Block) In BGA622_Application_Circuit.vsd Figure 3 Application Circuit for 1800 - 2500 MHz Data Sheet 8 Rev. 2.2, 2008-04-14 BGA622 Measured Parameters 3 Measured Parameters Power Gain |S | , G = f(f) 21 ma V = 2.75V, I = 5.8mA CC tot−on 25 2 Off Gain |S | = f(f) 21 V = 2.75V, V = 2.75V, I CC OUT 0 2 tot−off = 0.3mA −5 G 20 ma −10 |S21|2, Gma [dB] |S21|2 15 −15 |S21| [dB] −20 2 −25 10 −30 5 −35 −40 0 0 1 2 3 4 5 6 −45 0 1 2 3 4 5 6 Frequency [GHz] Frequency [GHz] Reverse Isolation |S | = f(f) 12 VCC = 2.75V, I tot−on = 5.8mA 0 Matching |S |, |S | = f(f) 11 22 VCC = 2.75V, I tot−on = 5.8mA 0 S11 −5 −2 −4 −6 −15 −10 |S11|, |S22| [dB] −8 −10 −12 −14 |S12| [dB] −20 −25 −30 −35 −16 −18 −40 S22 −45 0 1 2 3 4 5 6 −20 0 1 2 3 4 5 6 Frequency [GHz] Frequency [GHz] Data Sheet 9 Rev. 2.2, 2008-04-14 BGA622 Measured Parameters Stability K, B = f(f) 1 VCC = 2.75V, I tot−on = 5.8mA 5 4.5 4 Noise Figure F = f(f) VCC = 2.75V, I tot−on = 5.8mA, ZS = 50Ω 1.5 1.4 1.3 K 3.5 3 2.5 2 1.5 1.2 1.1 F [dB] B1 0 1 2 3 4 5 6 K, B1 1 0.9 0.8 0.7 0.6 0.5 0 0.5 1 1.5 2 2.5 3 1 0.5 0 Frequency [GHz] Frequency [GHz] Input Compression Point P = f(V ) −1dB CC f = 2.14GHz, T = parameter in °C A −10.5 Device Current I = f(T , V ) tot−on A CC V = parameter in V CC 8.5 85 3.4 −11 8 20 −11.5 7.5 −40 P−1dB [dBm] −12 3.2 Itot−on [mA] 7 3 6.5 −12.5 2.8 −13 6 2.6 −13.5 5.5 −14 2.6 2.8 3 3.2 3.4 5 −40 −20 0 20 40 60 80 VCC [V] TA [°C] Data Sheet 10 Rev. 2.2, 2008-04-14 BGA622 Measured Parameters Device Current I = f(V , T ) tot−on CC A T A = parameter in °C 8.5 Power Gain |S |2 = f(T , V ) 21 A CC f = 2.14GHz, V = parameter in V CC 15 8 −40 20 14.5 7.5 85 Itot−on [mA] |S |2 [dB] 7 14 3.4 6.5 21 13.5 6 13 5.5 3 2.6 5 2.6 12.5 −40 2.8 3 3.2 3.4 −20 0 20 40 60 80 V CC [V] T [°C] A Power Gain |S | = f(V , T ) 21 CC A f = 2.14GHz, T = parameter in °C A 15.5 2 15 −40 14.5 |S21|2 [dB] 14 20 13.5 85 13 12.5 2.6 2.8 3 3.2 3.4 VCC [V] Data Sheet 11 Rev. 2.2, 2008-04-14 BGA622 Package Information 4 Package Information 2 ±0.2 1.3 ±0.1 4 3 B 0.20 M 0.9 ±0.1 B 0.1 max A 1 0.3 +0.1 2 0.15 +0.1 -0.05 0.6 +0.1 0.20 M A GPS05605 Figure 4 Package Outline SOT343 4 0.2 Pin 1 2.15 2.3 8 1.1 Figure 5 Tape for SOT343 Data Sheet 12 1.25 ±0.1 Rev. 2.2, 2008-04-14 2.1±0.1 +0.2 acc. to DIN 6784