BGF125

Data Sheet, V2.0, April 2009 BGF125 S I M C a r d I n t e r f a c e F i l te r a n d E S D P r o t e c t i o n Small Signal Discretes Edition 2009-04-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGF125 SIM Card Interface Filter and ESD Protection BGF125 Revision History: 2009-04-01, V2.0 Previous Version: 2008-05-27, V1.0 Page all 5, 6 7 Subjects (major changes since last revision) target status removed Figure 2 and Figure 3 updated Figure 5 added Data Sheet 3 V2.0, 2009-04-01 BGF125 SIM Card Interface Filter and ESD Protection BGF125 BGF125 Features • ESD protection circuit and interface filter for SIM cards • Reduced line capacitance of 12 pF maximum • ESD protection according to IEC61000-4-2 for ±15 kV contact discharge on external IOs • Wafer level package with SnAgCu solder balls • 400 µm solder ball pitch • RoHS and WEEE compliant package WLP-8-10-N-3D Description BGF125 is an ESD protection and filtering circuit for SIM card interfaces. All external IOs are protected against ESD pulses of ±15 kV contact discharge according to IEC61000-4-2. The wafer level package is a green lead-free and halogen-free package with a size of only 1.15 mm x 1.15 mm and a total height of 0.6 mm C2 A3 B3 C3 R1, 100 Ω R2, 47 Ω R3, 100 Ω Ext. IOs A2 B1 C1 GND, B2 BGF125 _schematic.vsd Figure 1 Type BGF125 Table 1 Parameter Schematic Package WLP-8-10 Maximum Ratings Symbol Min. Values Typ. – – – – – – Max. 5 +85 +150 60 2 15 V °C °C mW kV kV 0 -40 -65 – -2 -15 Unit Note / Test Condition – – – Marking 25 Chip N0745 Voltage at all pins to GND Operating temperature range Storage temperature range Summed up input power for all pins Contact discharge at internal pins A3, B3, C3 VP TOP TSTG Pin VESD TS < 70 °C – – Electrostatic Discharge According to IEC61000-4-2 Contact discharge at external pins A2, B1, C1, VESD C2 Data Sheet 4 V2.0, 2009-04-01 BGF125 SIM Card Interface Filter and ESD Protection BGF125 Table 2 Parameter Electrical Characteristics1) Symbol Min. Values Typ. 100 47 1 2 18.5 -12.5 10 Max. 120 56.4 100 200 – 12 Ω Ω nA nA V pF 80 37.6 – – – 8 Unit Note / Test Condition – – Resistors R1, R3 Resistor R2 Leakage current of ESD protection diodes Breakdown voltage of ESD diodes2) Line capacitance Capacitance of all lines to GND 1) at TA = 25 °C 2) after snap-back R1,3 R2 IL V(BR) CT V=3V V=5V I(BR) = 1 mA I(BR) = -1 mA V=0V BGF125 insertion loss 0 -5 -10 -15 dB -20 -25 -30 -35 -40 1 10 100 MHz 1000 10000 A2-A3 B1-B3 Figure 2 Insertion Loss, ZS = ZL = 50 Ω Data Sheet 5 V2.0, 2009-04-01 BGF125 SIM Card Interface Filter and ESD Protection BGF125 BGF125 cross talk 0 -20 C1-C2 -40 dB C1-B3 -60 -80 -100 1 10 100 MHz 1000 10000 Figure 3 Typical Cross Talk, ZS = ZL = 50 Ω Package Outlines Solder balls face down 0.6 ±0.05 0.2 ±0.05 STANDOFF 0.1 C (0.175 ±0.05) Solder balls face up 1.15 ±0.05 0.4 (0.175 ±0.05) C1 C2 C3 (0.175 ±0.05) (0.175 ±0.05) B A SEATING PLANE 3) 2 x 0.4 = 0.8 B1 B2 B3 A2 A3 Pin 1 Corner Index Area 2) C 2 x 0.4 = 0.8 8x ø0.05 M A B 0.25 ±0.04 1) 0.08 C 8x COPLANARITY 1) Dimension is measured at the maximum solder ball diameter, parallel to primary datum C 2) A1 corner identified by marking 3) Primary datum C and seating plane are defined by the domed crowns of the balls WLP-8-10-N-PO V02 Figure 4 WLP-8-10 (Wafer Level Package) Data Sheet 6 V2.0, 2009-04-01 1.15 ±0.05 0.4 BGF125 SIM Card Interface Filter and ESD Protection BGF125 Footprint 0.8 0.4 0.25 WLP-8-10-N-FP V02 Figure 5 Tape Recommended PCB pad design for reflow soldering 0.4 0.8 4 1.33 0.25 8 Pin 1 Corner Index Area 1.33 0.75 WLP-8-10-N-TP V01 Figure 6 Tape for BGF125 / WLP-8-10 You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Data Sheet 7 V2.0, 2009-04-01