BSC052N03LS

n-Channel Power MOSFET OptiMOS™ BSC052N03LS Data Sheet 2.0, 2011-03-01 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSC052N03LS 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS™ products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Features • • • • • • • • Optimized for high performance buck converters 100% avalanche tested Very low on-resistance RDS(on) @ VGS=4.5 V N-channel Qualified according to JEDEC1) for target applications Superior thermal resistance Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Applications • • • • On board power for server Power managment for high performance computing Synchronous rectification High power density point of load converters Table 1 Parameter Key Performance Parameters Value 30 5.2 57 7.7 12 Unit V mΩ A nC Related Links IFX OptiMOS webpage IFX OptiMOS product brief IFX OptiMOS spice models IFX Design tools VDS RDS(on),max ID QOSS Qg.typ Type BSC052N03LS Package PG-TDSON-8 Marking 052N03LS 1) J-STD20 and JESD22 Final Data Sheet 1 2.0, 2011-03-01 OptiMOS™ Power-MOSFET BSC052N03LS 2 Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Parameter Continuous drain current Maximum ratings Symbol Min. ID Pulsed drain current2) Avalanche current, single pulse Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature 3) Values Typ. Max. 57 36 48 31 17 228 35 12 20 28 2.5 150 Unit A Note / Test Condition VGS=10 V, TC=25 °C VGS=10 V, TC=100 °C VGS=4.5 V, TC=25 °C VGS=4.5 V, TC=100 °C VGS=10 V, TA=25 °C, RthJA=50 K/W1)) TC=25 °C ID,pulse IAS EAS VGS Ptot Tj,Tstg -20 -55 mJ V W °C ID=35 A,RGS=25 Ω TC=25 °C TA=25 °C, RthJA=50 K/W1)) IEC climatic category; DIN IEC 68-1 55/150/56 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 3 Table 3 Parameter Thermal characteristics Thermal characteristics Symbol Min. Values Typ. Max. 4.5 20 K/W top Unit Note / Test Condition Thermal resistance, junction - case RthJC Device on PCB RthJA 50 6 cm2 cooling area1) 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air Final Data Sheet 2 2.0, 2011-03-01 OptiMOS™ Power-MOSFET BSC052N03LS Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 4 Parameter Static characteristics Symbol Min. Drain-source breakdown voltage V(BR)DSS Gate threshold voltage Zero gate voltage drain current 30 1 Gate-source leakage current 0.1 10 10 5.8 4.3 0.65 75 Values Typ. Max. 2.2 1 100 100 7.2 5.2 Ω S |VDS|>2|ID|RDS(on)max, ID=30 A nA mΩ µA V Unit Note / Test Condition VGS=0 V, ID=1.0 mA VDS=VGS, ID=250 µA VDS=30 V, VGS=0 V, Tj=25 °C VDS=30 V, VGS=0 V, Tj=125 °C VGS=20 V, VDS=0 V VGS=4.5 V, ID=30 A, VGS=10 V, ID=30 A, VGS(th) IDSS IGSS 38 Drain-source on-state resistance RDS(on) Gate resistance Transconductance RG gfs Table 5 Parameter Dynamic characteristics Symbol Min. Values Typ. 770 300 44 2.4 3.6 13 2.4 Max. ns pF Unit Note / Test Condition Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss VGS=0 V, VDS=15 V, f=1 MHz VDD=15 V, VGS=10 V, ID=30 A, RG= 1.6 Ω td(on) tr td(off) tf Final Data Sheet 3 2.0, 2011-03-01 OptiMOS™ Power-MOSFET BSC052N03LS Electrical characteristics Table 6 Parameter Gate charge characteristics1) Symbol Min. Values Typ. 2.2 1.2 1.9 2.9 5.9 2.8 12 Max. V nC nC Unit Note / Test Condition Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Qgs Qg(th) Qgd Qsw VDD=15 V, ID=30 A, VGS=0 to 4.5 V Qg Vplateau Qg VDD=15 V, ID=30 A, VGS=0 to 10V VDS=0.1 V, VGS=0 to 4.5 V VDD=15 V, VGS=0 V Gate charge total, sync. FET Output charge Qg(sync) Qoss - 4.8 7.7 - 1) See figure 16 for gate charge parameter definition Table 7 Parameter Reverse diode characteristics Symbol Min. Is IS,pulse 0.9 5 Values Typ. Max. 28 112 1 V nC A Unit Note / Test Condition Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery charge TC=25 °C VGS=0 V, IF=30 A, Tj=25 °C VR=15 V, IF=Is, dIF/dt=400 A/µs VSD Qrr Final Data Sheet 4 2.0, 2011-03-01 OptiMOS™ Power-MOSFET BSC052N03LS Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 8 1 Power dissipation 2 Drain current Ptot = f(TC) Table 9 3 Safe operating area TC=25 °C ID=f(TC); parameter:VGS 4 Max. transient thermal impedance ID=f(VDS); Tj=25 °C; D=0; parameter: Tp Z(thJC)=f(tp); parameter: D=tp/T Final Data Sheet 5 2.0, 2011-03-01 OptiMOS™ Power-MOSFET BSC052N03LS Electrical characteristics diagrams Table 10 5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance ID=f(VDS); Tj=25 °C; parameter: VGS Table 11 7 Typ. transfer characteristics RDS(on)=f(ID); Tj=25 °C; parameter: VGS 8 Typ. forward transconductance ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C Final Data Sheet 6 2.0, 2011-03-01 OptiMOS™ Power-MOSFET BSC052N03LS Electrical characteristics diagrams Table 12 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on)=f(Tj); ID=30 A; VGS=10 V Table 13 11 Typ. capacitances VGS(th)=f(Tj); VGS=VDS; ID=250 µA 12 Forward characteristics of reverse diode C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj Final Data Sheet 7 2.0, 2011-03-01 OptiMOS™ Power-MOSFET BSC052N03LS Electrical characteristics diagrams Table 14 13 Avalanche characteristics 14 Typ. gate charge IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) Table 15 15 Drain-source breakdown voltage VGS=f(Qgate); ID=30 A pulsed; parameter: VDD 16 Gate charge waveforms VBR(DSS)=f(Tj); ID=1 mA Final Data Sheet 8 2.0, 2011-03-01 OptiMOS™ Power-MOSFET BSC052N03LS Package outline 6 Package outline Figure 1 Outlines PG-TDSON-8, dimensions in mm/inches Final Data Sheet 9 2.0, 2011-03-01 OptiMOS™ Power-MOSFET BSC052N03LS Package outline Figure 2 Outlines PG-TDSON-8 tape, dimension in mm/inches 10 2.0, 2011-03-01 Final Data Sheet OptiMOS™ Power-MOSFET BSC052N03LS Revision History 7 Revision History Revision History: 2011-03-01, 2.0 Previous Revision: Revision 0.4 1.0 2.0 Subjects (major changes since last revision) Release of Target data sheet Release of Preliminary data sheet Release of Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2011-03-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 11 2.0, 2011-03-01