BSC130P03LSG

BSC130P03LS G OptiMOS™-P Power-Transistor Features • P-Channel • Enhancement mode • Logic level • 150°C operating temperature • Avalanche rated; RoHS compliant • Vgs=25V, specially suited for notebook applications • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 13 -22.5 V mΩ A PG-TDSON-8 Type BSC130P03LS G Package PG-TDSON-8 Marking 130P03LS Lead free Yes Packing Dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C T A=25 °C1) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation I D,pulse E AS V GS P tot T C=25 °C T A=25 °C1) Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 T j, T stg JESD22-A114-HBM T C=25 °C2) I D=-22.5 A, R GS=25 Ω Value -22.5 -22.5 -12 -90 148 ±25 69 2.5 -55 ... 150 1C (1kV-2kV) 260 °C 55/150/56 °C mJ V W Unit A Rev. 1.04 page 1 2010-05-04 BSC130P03LS G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area1) Values typ. max. Unit - - 1.8 50 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250µA V GS(th) V DS=V GS, I D=-150 µA V DS=-30 V, V GS=0 V, T j=25 °C V DS=-30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=-22.5 A V GS=-25 V, V DS=0 V V GS=-10 V, I D=-22.5 A -30 -2.2 -1.5 -1 V Zero gate voltage drain current I DSS - -0.1 -1 µA 20 -10 -10 9.4 3.8 39 -100 -100 13.0 nA mΩ Ω S 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) 1) See Figure 3. Rev. 1.04 page 2 2010-05-04 BSC130P03LS G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=-22.5 A, T j=25 °C V R=15 V, I F=|I S|, di F/dt =100 A/µs -0.9 22.5 -90 -1.2 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=-15 V, V GS=0 V V DD=-24 V, I D=22.5 A, V GS=0 to -10 V -7.7 -4.3 -20.5 -24.0 -54.9 -2.9 -14.8 -10.3 -5.7 -30.8 -35.4 -73.1 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-15 V, V GS=10 V, I D=22.5 A, R G=6 Ω V GS=0 V, V DS=-15 V, f =1 MHz 2760 857 690 11.4 65.6 43.5 35.1 3670 1140 1000 17.1 98.4 65.3 52.7 ns pF Values typ. max. Unit Reverse recovery time t rr - 33 - ns Reverse recovery charge Q rr - 24 - nC Rev. 1.04 page 3 2010-05-04 BSC130P03LS G 1 Power dissipation P tot=f(T C); t p≤10 s 2 Drain current I D=f(T C); |V GS|≥10 V; t p≤10 s 80 24 70 20 60 16 50 P tot [W] 40 -I D [A] 0 40 80 120 160 12 30 8 20 4 10 0 0 0 40 80 120 160 TC [°C] T C[°C] 3 Safe operating area I D=f(V DS); T C=25 °C1); D =0 parameter: t p 102 100 4 Max. transient thermal impedance Z thJS=f(t p) parameter: D =t p/T 10 µs 101 10 100 µs 100 0.01 1 Z thJS [K/W] 10 -1 0.1 100 -I D [A] 1 ms 0.2 10 1 10 limited by on-state resistance 10 ms 0.1 0.05 0.02 DC single pulse 100 1 0.1 1 10 10-2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 -V DS [V] 10-5 10-4 10-3 t p [s] 10-2 10-1 100 101 Rev. 1.04 page 4 2010-05-04 BSC130P03LS G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 60 -10 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 50 50 -4.5 V -2.5 V 40 -3.5 V -2.7 V -3 V -3.2 V 40 30 -3.2 V R DS(on) [mΩ ] 30 -I D [A] -3.5 V -3 V 20 -4.5 V 20 -2.7 V 10 -2.5 V -2.3 V 10 -10 V 0 0 1 2 3 0 0 10 20 30 40 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 60 25 °C 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 50 50 40 40 150 °C 30 -I D [A] 30 g fs [S] 20 10 0 0 1 2 3 4 0 10 20 30 20 10 0 -V GS [V] -I D [A] Rev. 1.04 page 5 2010-05-04 BSC130P03LS G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-22.5 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-150 µA 16 3 14 98 % 2.5 max. 12 2 R DS(on) [mΩ ] -V GS(th) [V] 10 typ. 1.5 typ. 8 1 min. 6 0.5 4 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 10000 100 150 °C, typ 25 °C, typ Ciss 10 150 °C, 98% C [pF] 103 1000 Coss Crss I F [A] 1 25 °C, 98% 102 100 0.1 8 16 24 0 0.5 1 1.5 0 -V DS [V] -V SD [V] Rev. 1.04 page 6 2010-05-04 BSC130P03LS G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=-22.5 A pulsed parameter: V DD 10 9 8 7 25 °C -6 V -15 V -24 V 6 10 100 °C -V GS [V] 1000 -I AV [A] 5 4 3 2 1 125 °C 1 1 10 100 0 0 20 40 60 t AV [µs] -Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 µA 16 Gate charge waveforms 35 V GS 34 33 32 Qg -V BR(DSS) [V] 31 30 29 28 27 26 -60 -20 20 60 100 140 180 V g s(th) Q g(th) Q gs Q sw Q gd Q g ate T j [°C] Rev. 1.04 page 7 2010-05-04 BSC130P03LS G Package Outline PG-TDSON-8: Outline Rev. 1.04 page 8 2010-05-04 BSC130P03LS G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.04 page 9 2010-05-04