BSC900N20NS3G

Type BSC900N20NS3 G $(*'#$%TM3 Power-Transistor Features 9 /2* * &% ' 0% $ % $ $ .- 4&0 * ,7 . 1. 9 $ )" - - &+ - .0 " ++ 4&+  , & 9 6 &+&- 2 (" 2& $ )" 0 & 6 R DS(on) product (FOM) $+ ( 9 .5 .- 0 11 " - $ & R DS(on) & *2 Product Summary VDS RDS(on),max ID 200 90 15.2 V m# A PG-TDSON-8 9  8 ./&0 2* ( 2&, /&0 23 0  ""& 9 # ' && + " % /+ 2* (  . 0& "$ ., /+" - 2 * 1) 9 3 " +'&% " $ $ .0 * ( 2.      ** %- for target application 9 " + (&- ' && " $ $ .0 * ( 2.          . 0 %- Type BSC900N20NS3 G Package PG-TDSON-8 Marking 900N20NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 15.2 10.7 61 100 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=7.6 A, R GS=25 # mJ V W °C T C=25 °C 62.5 -55 ... 150 55/150/56 J-STD20 and JESD22 see figure 3 Rev. 2.1 page 1 2010-09-01 BSC900N20NS3 G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area3) 2 50 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=30 µA V DS=160 V, V GS=0 V, T j=25 °C V DS=160 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=7.6 A V GS=20 V, V DS=0 V V GS=10 V, I D=7.6 A 200 2 3 0.1 4 1 µA V 8 10 1 77 2.2 16 100 100 90 nA m# # S 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 2 2010-09-01 BSC900N20NS3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 4) Values typ. max. Unit C iss C oss C rss t d(on) tr t d(off) tf V DD=100 V, V GS=10 V, I D=7.6 A, R G=1.6 # V GS=0 V, V DS=100 V, f =1 MHz - 690 52 5.2 5 4 10 3 920 69 - pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=100 V, V GS=0 V V DD=100 V, I D=7.6 A, V GS=0 to 10 V - 3.1 1.3 2.4 9 4.5 20 11.6 26 nC V nC IS I S,pulse V SD t rr Q rr T C=25 °C V GS=0 V, I F=15.2 A, T j=25 °C V R=100 V, I F=I S, di F/dt =100 A/µs - 1 86 309 15.2 61 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev. 2.1 page 3 2010-09-01 BSC900N20NS3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS:  ! 70 16 60 14 12 50 10 Ptot [W] 40 ID [A] 30 20 10 0 0 40 80 120 160 8 6 4 2 0 0 40 80 120 160 TC [&C] TC [&C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 1 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 10 µs 101 ID [A] 1 ms ZthJC [K/W] 100 µs 0.5 100 100 10 ms 0.2 0.1 DC 0.05 0.02 0.01 single pulse 10-1 10-1 100 101 102 103 10-1 10-5 10-4 10-3 10-2 10-1 100 VDS [V] tp [s] Rev. 2.1 page 4 2010-09-01 BSC900N20NS3 G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 30 10 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 160 25 7V 6V 120 20 5.5 V 5V RDS(on) [m ] 5.5 V 6V 8V ID [A] 5V 15 80 10 V 10 40 4.5 V 5 0 0 1 2 3 4 5 0 0 4 8 12 16 VDS [V] ID [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 40 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 32 35 28 30 24 25 20 20 gfs [S] 150 °C 25 °C ID [A] 16 15 12 10 8 5 4 0 0 2 4 6 8 0 0 5 10 15 20 25 30 VGS [V] ID [A] Rev. 2.1 page 5 2010-09-01 BSC900N20NS3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=7.6 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 250 4 3.5 200 3 30 µA 300 µA RDS(on) [m ] 150 2.5 VGS(th) [V] typ 2 98 % 100 1.5 1 50 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 Tj [&C] Tj [&C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 Ciss 100 Coss 25 °C 102 10 150 °C, 98% C [p F ] IF [A] 150 °C 25 °C, 98% 101 Crss 1 100 0 40 80 120 160 0.1 0 0.5 1 1.5 2 VDS [V] VSD [V] Rev. 2.1 page 6 2010-09-01 BSC900N20NS3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 # parameter: T j(start) 14 Typ. gate charge V GS=f(Q gate); I D=7.6 A pulsed parameter: V DD 10 160 V 8 100 V 6 VGS [V] 40 V 4 2 0 0 1 2 3 4 5 6 7 8 9 Qgate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 230 220 VBR(DSS) [V] 210 200 190 180 -60 -20 20 60 100 140 180 Tj [&C] BSC900N20NS3 G Package Outline:PG-TDSON-8 Rev. 2.1 page 8 2010-09-01 BSC900N20NS3 G  ' $ (,%-0 2 , & (4$ , (, 2 (1 # -" 3 + $ ,2 ' * (, ,- $ 4$ ,2 $ 0 & 0 $ # + (' 1* !$ # 4 * $ 1 12 2 # ' $ 0 (, ,# -0 ,7 (,%-0 2 , 0 & 0 (,& 2 $ 3 $ $ + (- $ # ' ,%(,$ -,  $ " ' ,-* & ($ 1 ' $ 0 ! 7 # (1" * (+ 1 ,7 ,# $ -% ,7 2 (0 . 07 '# 2 1 & 3 0 ,2 $ -% $ " -,# (2 ,1 -0" ' 0 " 2 012 1  (2 0 1.$ " 2 - ,7 $ 6 + .* 1 -0' (,2 & (4$ , ' $ 0 (, ,7 2.(" * ($ ( (" '$ 2 $ 1 $ 7 ..*" 2 , -% 2 $ # $ 4(" $ ( (' * 5 0 ,2 1 ,# * ! 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