BSO4804

Preliminary data OptiMOS =Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS(on) product (FOM) 150°C operating temperature Avalanche rated dv/dt rated Ideal for fast switching applications Package SO 8 Ordering Code Q67042-S4097 Marking 4804 BSO4804 ID 8 A Type BSO4804 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value 8 6.4 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 32 90 6 ±20 2 -55... +150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse Reverse diode dv/dt Gate source voltage Power dissipation TA =25°C IS =8A, VDS =24V, di/dt=200A/µs, Tjmax=150°C Operating and storage temperature IEC climatic category; DIN IEC 68-1
ID =8 A , VDD =25V, RGS =25 Page 1 2001-09-06 
Product Summary VDS RDS(on) 30 20 V m         Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ 6 cm 2 cooling area 1); t @ min. footprint; t 10 sec. 10 sec. BSO4804 Symbol min. RthJS RthJA - Values typ. max. 45 110 62.5 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID =30µA Zero gate voltage drain current VDS =30V, VGS =0V, Tj=25°C VDS =30V, VGS =0V, Tj=125°C Gate-source leakage current VGS =20V, VDS=0V VGS =4.5V, ID=6.7A Drain-source on-state resistance VGS =10V, ID =8A RDS(on) - 17.4 20 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-09-06  Drain-source on-state resistance   Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V µA 0.01 10 1 23.8 1 100 100 28.2 nA m Preliminary data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics ID =6.4A BSO4804 Symbol Conditions min. Values typ. 17 700 300 74 1.1 9.1 27 18 24 max. 870 370 110 14 40 27 36 - Unit Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss RG td(on) tr td(off) tf VGS =0V, VDS =25V, f=1MHz VDD =15V, VGS=4.5V, - Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Output charge Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =1.8A VR =15V, IF =lS , diF /dt=100A/µs Qgs Qgd Qg Qoss VDD =15V, ID =8A VDD =15V, ID =8A, VGS =0 to 5V VDS =15V, ID =8A, VGS =0V V(plateau) VDD =15V, ID=8A IS ISM TA=25°C Page 3
ID =6.7A, RG=9.1 - 1.9 5.8 13.5 10.3 2.8 2.4 8.7 17 13 - - 0.9 24 16 1.8 32 1.3 30 20 2001-09-06   Transconductance gfs VDS 2*ID *RDS(on)max , 8.5 - S pF ns nC V A V ns nC Preliminary data 1 Power dissipation Ptot = f (TA ) 2.2 BSO4804 BSO4804 2 Drain current ID = f (TA) parameter: VGS 10 V 9 BSO4804 W 1.8 A 7 1.6 6 Ptot ID 1.4 1.2 1 0.8 0.6 5 4 3 2 0.4 0.2 0 0 20 40 60 80 100 120 1 0 0 °C TA 160 20 40 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 2 BSO4804 4 Transient thermal impedance ZthJS = f (tp ) parameter : D = tp /T 10 2 tp = 16.0 µs /I D = RD S( ) on BSO4804 V D S A K/W 10 1 10 1 100 µs 1 ms Z thJS ID 10 0 10 ms 10 0 D = 0.50 10 -1 single pulse 10 -1 DC 10 -2 10 -2 -1 10 10 0 10 1 V 10 2 10 -3 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 VDS Page 4  60 80 100 120 °C TA 160 0.20 0.10 0.05 0.02 0.01 s 10 2 tp 2001-09-06 Preliminary data 5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs 19 BSO4804 BSO4804 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 65 BSO4804 Ptot = 2W i hg fe d VGS [V] a 2.8 b 3.0 3.2 3.4 3.6 3.8 4.0 4.5 10.0 16 14 c d RDS(on) ID 12 10 8 6 4 2 0 0 c e f g h i b a 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs 40 8 Typ. forward transconductance gfs = f(ID ); Tj=25°C parameter: gfs 35 A 30 25 25 g fs ID 20 15 15 10 10 5 5 0 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VGS Page 5
55 50 45 40 35 30 25 20 15 10 5 0 0 VGS [V] = c 3.2 d 3.4 e f 3.6 3.8 g 4.0 A m c d e f g h i h i 4.5 10.0 2 4 6 8 10 A 14 ID  S 20 0 0 5 10 15 20 25 30 40 A ID 2001-09-06 Preliminary data 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 8 A, VGS = 10 V 42 BSO4804 BSO4804 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = 30 µA 2.5 RDS(on) 28 24 98% 20 typ 16 12 8 4 0 -60 V GS(th) 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 pF C Coss 10 2 Crss IF
36 32 m V max. typ. 1.5 min. 1 0.5 -20 20 60 100 °C 180 0 -60 -20 20 60 100 Tj °C 160 Tj 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 10 2 BSO4804 A 10 3 Ciss 10 1 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 V 30 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2001-09-06 Preliminary data 13 Typ. avalanche energy EAS = f (Tj ) 90 BSO4804 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 8 A pulsed 16 V BSO4804 mJ 70 E AS 60 50 VGS 40 6 30 20 10 0 25 4 0.2 VDS max 0.5 VDS max 50 75 100 °C Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA 36 BSO4804 V V (BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 °C Tj Page 7  150 180 par.: ID = 8 A , VDD = 25 V, RGS = 25 12 10 8 2 0.8 VDS max 0 0 4 8 12 16 20 24 28 32 36 nC 42 QGate 2001-09-06 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSO4804 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2001-09-06