BSO604NS2

BSO604NS2 OptiMOS Power-Transistor Feature • Dual N-Channel Product Summary VDS R DS(on) ID 55 35 5 P-DSO-8 -7 V mΩ A • Enhancement mode • Logic Level •150 °C operating temperature • Avalanche rated • dv/dt rated Type BSO604NS2 Package P-DSO-8 -7 Ordering Code Q67060-S7309 Marking 2N604L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C, one channel active TA=70°C, one channel active Symbol ID Value 5 4 Unit A Pulsed drain current, one channel active TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 20 90 6 ±20 2 -55... +150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID=5 A , VDD=25V, RGS=25Ω Reverse diode dv/dt IS=5A, VDS=44V, di/dt=200A/µs, Tjmax=150°C Gate source voltage Power dissipation, one channel active TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-10-28 BSO604NS2 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint ; t ≤ 10 s @ 6 cm2 cooling area 1) ; t ≤10 s Symbol min. RthJS RthJA Values typ. 34 max. 50 100 62.5 Unit - K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, I D=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = VDS ID=30µA Zero gate voltage drain current V DS=55V, V GS=0V, Tj=25°C V DS=55V, V GS=0V, Tj=150°C µA 0.01 1 1 38 31 1 100 100 44 35 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, ID=2.5A Drain-source on-state resistance V GS=10V, ID=2.5A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-10-28 BSO604NS2 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =44V, ID=5A, VGS =0 to 10V VDD =44V, ID=5A Symbol Conditions min. Values typ. 13.4 656 154 49 9 8 52 8 max. 870 205 75 14 13 78 12 Unit gfs Ciss Coss Crss td(on) tr td(off) tf V DS≥ 2 * ID * RDS(on)max=0.4V, ID =5A V GS=0V, VDS=25V, f=1MHz 6.7 - S pF V DD=27.5V, VGS=4.5V, ID=5A, RG=75Ω ns - 2 6.6 19.7 2.9 3 10 26 - nC V(plateau) VDD =44V, ID=5A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF=5A VR =27.5V, IF =lS , diF/dt=100A/µs IS TA=25°C - 0.9 32 34 5 20 1.3 40 43 A V ns nC Page 3 2003-10-28 BSO604NS2 1 Power dissipation Ptot = f (TA) parameter: V GS≥ 6 V 2.2 BSO604NS2 thJC thJA 2 Drain current ID = f (TA) parameter: V GS≥ 10 V 5.5 BSO604NS2 W 1.8 1.6 R A 4.5 4 Ptot 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 ID °C 1.4 3.5 3 2.5 2 1.5 1 0.5 160 0 0 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TA = 25 °C 10 2 BSO604NS2 4 Max. transient thermal impedance ZthJC = f (t p) parameter : D = t p/T K/W tp = 46.0 µs 10 2 BSO604NS2 A S( ) on /I D = VD S 10 1 10 1 RD 100 µs ZthJC 1 ms 10 0 ID 0 10 10 ms 10 -1 D = 0.50 0.20 0.10 0.05 0.02 10 10 -1 -2 10 -3 DC 10 -2 -1 10 10 -4 -7 10 single pulse 0.01 10 0 10 1 V 10 2 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-10-28 BSO604NS2 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 12 BSO604NS2 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: V GS 120 BSO604NS2 A 10 9 8 Ptot = 2W gf ed VGS [V] a 3.0 b c 3.2 3.4 3.6 3.8 4.0 4.5 10.0 h mΩ c 100 c d e f g RDS(on) 90 80 70 60 50 40 d ID 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 a b e h f g h 30 20 10 4 VGS [V] = c 3.4 d 3.6 e f 3.8 4.0 g h 4.5 10.0 V 5 0 0 1 2 3 4 5 6 7 8 A 10 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 20 8 Typ. forward transconductance g fs = f(ID); Tj=25°C parameter: gfs 24 A 16 14 12 10 8 6 4 2 0 0 S 20 18 gfs 4 V VGS ID 16 14 12 10 8 6 4 2 0.5 1 1.5 2 2.5 3 0 0 2 4 6 8 10 12 14 16 A ID 20 Page 5 2003-10-28 BSO604NS2 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 2.5 A, VGS = 10 V 110 BSO604NS2 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS 2.5 mΩ 90 V RDS(on) 80 70 60 50 40 30 20 10 0 -60 -20 20 60 100 °C VGS(th) 150 µA 1.5 30 µA 98% typ 1 0.5 180 0 -60 -20 20 60 100 °C Tj 180 Tj 11 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 10 2 BSO604NS2 pF A 10 3 Ciss IF Coss 10 1 C 10 2 Crss 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 V VDS 30 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-10-28 BSO604NS2 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 5 A , VDD = 25 V, RGS = 25 Ω 90 14 Typ. gate charge VGS = f (QGate) parameter: ID = 5 A pulsed 16 BSO604NS2 mJ V 70 12 EAS VGS 60 50 10 0,2 VDS max 8 0,8 VDS max 40 6 30 20 10 0 25 4 2 45 65 85 105 125 145 °C 185 Tj 0 0 4 8 12 16 20 24 nC 30 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 66 BSO604NS2 V V(BR)DSS 62 60 58 56 54 52 50 -60 -20 20 60 100 °C 180 Tj Page 7 2003-10-28 BSO604NS2 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BBSO604NS2, for simplicity the device is referred to by the term BSO604NS2 throughout this documentation. Page 8 2003-10-28