BSS138W

BSS138W SIPMOS® Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated Product Summary V DS R DS(on),max ID 60 3.5 0.28 V Ω A SOT-323 Type BSS138W BSS138W Package SOT-323 SOT-323 Ordering Code Q67042-S4187 Q67042-S4191 Tape and Reel Information E6327: 3000 pcs/reel E6433: 10000 pcs/reel Marking SWs SWs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.28 A, V DS=48 V, di /dt =200 A/µs, T j,max=150 °C Value 0.28 0.22 1.12 Unit A Reverse diode dv /dt dv /dt 6 kV/µs Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS ±20 Class 1 V P tot T j, T stg T A=25 °C 0.50 -55 ... 150 55/150/56 W °C Rev. 1.1 page 1 2004-04-16 BSS138W Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA 250 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS= 0 V, I D=250 µA V GS(th) I D (off) V GS=V DS, I D=26 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=0.03 A 60 0.6 1.0 1.4 0.1 µA V - - 5 - 1 3 10 4.0 nA Ω V GS=4.5 V, I D=0.16 A V GS=10 V, I D=0.2 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.22 A 0.12 3.2 2.1 0.23 6 3.5 S Rev. 1.1 page 2 2004-04-16 BSS138W Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 °C V GS=0 V, I F=0.28 A, T j=25 °C V R=30 V, I F=0.28 A, di F/dt =100 A/µs 0.85 8.3 3.3 0.28 1.12 1.2 12.4 5 V ns nC A Q gs Q gd Qg V plateau V DD=48 V, I D=0.2 A, V GS=0 to 10 V 0.10 0.3 1.0 3.2 0.13 0.4 1.5 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=0.2 A, R G=6 Ω V GS=0 V, V DS=25 V, f =1 MHz 32 7.2 2.8 2.2 3.0 6.7 8.2 43 10 4.2 3.3 4.5 10 12 ns pF Values typ. max. Unit Rev. 1.1 page 3 2004-04-16 BSS138W 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS≥10 V 0.3 0.5 0.25 0.4 0.2 P tot [W] I D [A] 0.3 0.15 0.2 0.1 0.1 0.05 0 0 40 80 120 160 0 0 40 80 120 160 T A [°C] T A [°C] 3 Safe operation area I D=f(V DS); T A=25 °C; D =0 parameter: t p 101 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 103 limited by on-state resistance 10 µs 102 0.5 0.2 10 0 100 µs 0.1 0.05 Z thJA [K/W] 1 ms 101 0.02 0.01 I D [A] 10 -1 10 ms 100 ms 100 single pulse DC 10 -2 10-1 10-3 1 10 100 10-2 10-6 10-5 10-4 10-3 10-2 t p [s] 10-1 100 101 102 V DS [V] Rev. 1.1 page 4 2004-04-16 BSS138W 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 0.6 10 V 7V 5V 4.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 10 2.9 V 3.2 V 3.5 V 4V 0.5 4V 8 0.4 0.3 3.5 V R DS(on) [Ω ] 6 I D [A] 4.5 V 3.2 V 4 0.2 2.9 V 5V 7V 0.1 2 10 V 0 0 1 2 3 4 5 0 0 0.1 0.2 0.3 0.4 0.5 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 0.6 0.4 0.35 0.3 0.5 0.4 0.25 0.3 g fs [S] 0 1 2 3 4 5 I D [A] 0.2 0.15 0.1 0.2 0.1 0.05 0 0 0.00 0.10 0.20 0.30 0.40 V GS [V] I D [A] Rev. 1.1 page 5 2004-04-16 BSS138W 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.2 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=26 µA parameter: I D 8 2 1.6 6 98 % R DS(on) [Ω ] 4 98 % V GS(th) [V] 1.2 typ 0.8 2 typ 2% 0.4 0 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 100 25 °C 150 °C, 98% 25 °C, 98% 150 °C Ciss 10-1 C [pF] 101 Coss I F [A] 10-2 Crss 100 0 10 20 30 10-3 0 0.4 0.8 1.2 1.6 2 V DS [V] V SD [V] Rev. 1.1 page 6 2004-04-16 BSS138W 13 Typ. gate charge V GS=f(Q gate); I D=0.2 A pulsed parameter: V DD 12 70 14 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 30 V 10 65 8 V GS [V] 12 V 48 V V BR(DSS) [V] 6 60 4 55 2 0 0 0.2 0.4 0.6 0.8 1 50 -60 -20 20 60 100 140 180 Q gate [nC] T j [°C] Rev. 1.1 page 7 2004-04-16 BSS138W Package Outline: Footprint: Packaging: Rev. 1.1 page 8 2004-04-16 BSS138W Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 9 2004-04-16