BTS3408G

Smart Low Side Power Switch HITFET BTS3408G Datasheet Rev. 1.3 Features • • • • • • • • • • • • • • • • • • • • Logic Level Input Compatible to 3V micro controllers ESD protection Thermal shutdown with auto restart Overload protection Short circuit protection Over voltage protection Open load detection (during Off) Current limitation Direct parallel control of the inputs FREEZE functionality for multiplexing General fault flag Very low standby quiescent current Switching frequencies up to 50kHz Green Product (RoHS compliant) AEC Qualified All kinds of resistive, inductive and capacitive loads in switching applications µC compatible power switch for 12 V, 24 V and 42 V applications Replaces electromechanical relays and discrete circuits Line, stepper motor, lamp and relay driver Application General Description The BTS3408G is a dual channel Low-Side Switch with D-MOS output stages for driving resistive, capacitive and inductive loads. The design is based on Infineons Smart Power Technology (SPT) which allows bipolar, CMOS and power D-MOS devices on the same monolithic circuit. The BTS3408G is protected by embedded protection functions and designed for automotive and industrial applications. It is especially suited for driving stepper motors and lines. Type HITFET BTS3408G Datasheet Rev. 1.3  Ordering Code on request 1 Package PG-DSO8-36 2008-01-09 HITFET BTS3408G Product Summary Parameter Supply voltage Continuous drain source voltage On-state resistance Current limitation Nominal output current (individual channel) Clamping energy VS BTS 3408 Logic FAULT Open Drain Status Feedback Protection and Diagnosis Control Protection Normal Function Over Temp Short Circuit Symbol Value 4.5 - 60 60 550 1 0.55 800 Unit V V mΩ A A mJ VS VDS RDS(ON) ID(lim) ID(Nom) EAS Vbb IN1 Open Load @ OFF IN2 Freeze functionality OUT1 Output Control OUTPUT Stage OUT2 ENA GND Figure 1 Block Diagram 1 2 3 4 FAULT IN1 IN2 ENA VS OUT1 GND OUT2 8 7 6 5 Figure 2 Pin Configuration 2 2008-01-09 Datasheet Rev. 1.3 LOAD HITFET BTS3408G Pin Definitions and Functions Pin 1 2 3 4 Symbol FAULT IN1 IN2 ENA Function General Fault Flag; see Table 2 for operation mode. Input 1; input of channel 1; has an internal pull down; TTL/ CMOS compatible input. Input 2; input of channel 2; has an internal pull down; TTL/ CMOS compatible input. Enable/Freeze; has an internal pull down; device is enabled when voltage is higher then 1.2 Volts; if the voltage is below 1.7 Volts the output is freezed, input signals will be ignored; if the voltage is above 2 Volts input signals will be output ; see Table 1 for detailed information. Output 2; output of D-MOS stage 2. Ground. Output 1; output of D-MOS stage 1. Power supply. 5 6 7 8 OUT2 GND OUT1 VS Datasheet Rev. 1.3 3 2008-01-09 HITFET BTS3408G Circuit Description Logic Supply The logic is supplied with 4.5 up to 60 Volt by the VS pin. If VS falls below max. 4.5 Volts the logic is shut down and the output stages are switched off. Direct Inputs ENA The ENA/FREEZE input can be used to enable and/or to freeze the output control of the IC or to cut off the complete IC. By pulling the ENA input to low, i.e. applying a Voltage VENAL , the IC is in disable mode. The power stages are switched off and the current consumption is reduced to IS(stby). By applying a Voltage VENAFZ , the IC is in FREEZE mode. The output signals will remain in their former state. All input signals will be ignored. By pulling the input to high, the IC is in Enable mode. All input signals are output. The ENA - pin has an internal pull-down. IN1 / IN2 Each output is independently controlled via the respective input pin. The input pins are high active. If the common enable pin is high, the individual input signals are output. The input pins have an internal pull-down. Table 1 VENA ≤0.8V Functional Table Mode IN1 IN2 IN1(-1) IN2(-1) OUT1 OUT2 Comment X 1) L H L H 1) 1) Disable X 1) X 1) X 1) 1) L L L H H L L H L H L H L H all outputs OFF former output state former output state former output state former output state input is output input is output input is output input is output 1.2 .. 1.7V Freeze X 1.2 .. 1.7V Freeze X ≥2.0V ≥2.0V ≥2.0V ≥2.0V 1) X X L H L H 1) L H X X X 1.2 .. 1.7V Freeze X 1) X 1) L 1) 1) 1.2 .. 1.7V Freeze X 1) X 1) H Enable L Enable L Enable H Enable H X X X 1) 1) L L H H X 1) 1) X 1) 1) X = not relevant Datasheet Rev. 1.3 4 2008-01-09 HITFET BTS3408G Power stages Each output is protected by embedded protection functions. In the event of an overload or short to supply, the current is internally limited. The current limit is set to ID(lim). If this operation leads to an overtemperature condition, a second protection level (about 165 °C) will turn the effected output into a PWM-mode (selective thermal shutdown with restart) to prevent critical chip temperatures. The temperature hysteresis is typically 10K. Zener clamping is implemented to limit voltages at the power transistors when inductive loads are switched off. Diagnostic The general FAULT pin is an open drain output. The FAULT pin is low active. It signals fault conditions of any of the two output stages. By doing so, single and/or dual fault conditions can be monitored. Single fault conditions can be assigned. Table 2 Standby Normal function Over temperature Open load / short to ground 1) 2) Diagnostic Table ENA L H H H INX X 1) H H L OUTX OFF ON OFF OFF 2) Operating Condition FAULT H H L L X = not relevant selective thermal shutdown for each channel at overtemperature Fault Distinction Open load / short to ground is recognized during OFF-state. Overtemperature as a result of an overload or short to battery can only arise during ON-state. If there is only one fault at a time, it is possible to distinguish which channel is affected with which fault. . Datasheet Rev. 1.3 5 2008-01-09 HITFET BTS3408G Absolute Maximum Ratings 1) Tj = -40°C to 150°C , unless otherwise specified Parameter Supply Voltage Drain source voltage (OUT1, OUT2) Input voltage (IN1, IN2, ENA) Continuous input current VIN>7V FAULT output voltage Operating temperature range Storage temperature range Power dissipation (DC) 2) Nominal load current one channel active both channel active 2) Symbol Values +4.5 .. +60 -0.3 .. +60 -0.3 … +7 1 -0.3 … +7 Unit Remarks V V V V – – – – – – VDS≤0.5V, Tj≤150°C, TA=85°C, VIN=5V VS VDS VIN IIN VFault Tj Tstg Ptot ID(Nom) mA – -40 … +150 °C -55 … +150 °C 0.88 0.55 0.45 800 2000 mJ V W A Unclamped single pulse inductive energy EAS one channel active Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 ID=0.7A, Tj(start)=25°C – VESD Thermal Resistance Junction soldering point RthJS ≤ 10 ≤ 185 ≤ 142 K/W – K/W – Junction - ambient @ min. footprint RthJA Junction - ambient @ 6cm² cooling area 2) 1) Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Device on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for pin 4 connection. 2) Datasheet Rev. 1.3 6 2008-01-09 HITFET BTS3408G Electrical Characteristics VS = 4.5 to 18V; Tj = -40 to 150°C; unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Test Conditions Power supply Supply voltage Supply current in enable mode VS IS(ON) 4.5 – – 1.5 – 60 4 16 V – mA ENA=High, OUT1=OUT2=On µA ENA=Low Supply current in standby mode 1) IS(stby) – Power outputs Drain source clamp voltage Output leakage current 2) VDS(AZ) 60 IDSS – – 1 75 5 V µA ID = 1 m A ENA=Low, IN=Low, VDS = 60 V ENA=High, IN=Low, VDS = 42 V Output pull down current IPD(OL) 50 100 200 µA On-state resistance Tj = 25 °C Tj = 150 °C Current limit RDS(on) – – 1 – – 480 800 1.5 2 2 550 1000 2 8 8 mΩ ID = 0.2 A, VS = 5 V A µs µs – ID(lim) Turn-on time IN=High to 90% ID: ton Turn-off time IN=Low to 10% ID: ton RL=2kΩ, VBB=12V,VS=5V RL=2kΩ, VBB=12V,VS=5V Digital inputs (IN1, IN2, ENA) Input ’Low’ voltage IN1, IN2: ENA: ENA voltage for ’FREEZE’ functionality V -0.3 – VINL VENAL -0.3 – VENAFZ 1.2 – 0.8 0.8 1.7 V – – Datasheet Rev. 1.3 7 2008-01-09 HITFET BTS3408G Electrical Characteristics (cont’d) VS = 4.5 to 18V; Tj = -40 to 150°C; unless otherwise specified Parameter Input ’High’ voltage IN1, IN2: ENA: Input voltage hysteresis Input pull down current IN1, IN2: ENA: Digital Output (FAULT) Output ’Low’ voltage Diagnostic Functions Open load / short to ground detection voltage Fault filter time for open load Protection Functions 3) Thermal overload trip temperature Thermal hysteresis Tjt 150 – 165 10 180 – °C Κ mJ 800 550 240 240 – – Symbol Limit Values min. typ. – – 300 50 50 max. V – – – – 100 100 mV – µA – Unit Test Conditions VINH 2.0 VENAH 2.0 VINhys – IINPD 20 IENAPD 20 VFLTL – – 0.4 V IFLTL=1.6mA, VDS(OL) 0.5*VS 0.7*VS 0.9*VS V tfilter(OL) 30 100 200 µs – VS=5V ∆Tjt Unclamped single pulse inductive EAS energy one channel active,Tj(start)=25°C both channel active,Tj(start)=25°C one channel active,Tj(start)=150°C both channel active,Tj(start)=150°C 1) 2) 3) ID=0.7 A See also diagram 4 on page 14. See also diagram 5 on page 14. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Datasheet Rev. 1.3 8 2008-01-09 HITFET BTS3408G EMC-Characteristics The following EMC-Characteristics outline the behavior of typical devices. They are not part of any production test. Table 3 Parameter Temperature Supply Voltage Input Voltage (ENA, IN1, IN2) Load Operation mode DUT specific Fast electrical transients acc. to ISO 7637 Test Result Test Pulse 1 2 3a 3b 4 5 1) Test Conditions Symbol TA VBB VINx RL1 , RL2 PWM DC Value 23 ±5 13.5 5 27 – – Unit °C V V Ω – – Remark – – – ohmic fINx=100Hz, D=0.5 ON / OFF all tests with ENA=HIGH 1) Max. Test Level -200V +200V -200V +200V -7V 175V VS and OUTx stressed ON OFF E(-120V) E(-120V) E(+120V E(+120V C C C E(50V) C C C E(65V) OUTx stressed ON C C C C C E(70V) OFF C C C C C E(75V) Pulse Cycle Time and Generator Impedance 500ms ; 10Ω 500ms ; 10Ω 100ms ; 10Ω 100ms ; 10Ω 0.01Ω 400ms ; 2Ω The test pulses are applied at VBB Definition of functional status Class C E Content All functions of the device are performed as designed after exposure to disturbance. One or more function of a device does not perform as designed after exposure and can not be returned to proper operation without repairing or replacing the device. The value after the character shows the limit. Datasheet Rev. 1.3 9 2008-01-09 HITFET BTS3408G Figure 3 VBB Test circuit for ISO pulse PULSE stress also for VS 13.5V 3408 VS FAULT OUT1 IN1 IN2 OUT2 ENA GND RL1 RL2 Datasheet Rev. 1.3 10 2008-01-09 HITFET BTS3408G Conducted Emissions Acc. IEC 61967-4 (1Ω/150Ω method) Typ. OUTx Emissions at PWM-mode with 150Ω-matching network 100 90 80 70 60 50 Noise OUT1 OUT2 150ohm Class1 150ohm Class6 Conducted Susceptibility Acc. I47A/658/CD IEC 62132-4 (Direct Power Injection) Direct Power Injection: Forward Power CW Failure Criteria: Amplitude or frequency variation max. 10% at OUT Typ. OUTx Susceptibility at DC-ON/OFF and at PWM 40 35 30 dBµV 150Ω / 8-H 40 30 20 10 0 -10 -20 0,1 1 10 100 1000 150Ω / 13-N 25 20 15 10 5 0 1 10 100 1000 Limit OUT2, ON OUT2, OFF OUT2, PWM Figure 4 VBB Test circuit for conducted emission 1) dBm f / MHz f / MHz Figure 5 5V 3408 VS FAULT OUT1 IN1 IN2 OUT2 ENA GND RL1 RL2 5V 150Ω-Network 150Ω-Network VBB Test circuit for conducted susceptibility 2) B A N B A N 3408 VS FAULT OUT1 IN1 IN2 OUT2 ENA GND RL1 RL2 HF HF 2) 1) For defined decoupling and high reproducibility a defined choke (5µH at 1 MHz) is inserted between Vbb and Out-Pin. Broadband Artificial Network (short BAN) consists of the same choke (5µH at 1 MHz) and the same 150ohm-matching network as for emission measurement for defined decoupling and high reproducibility. Datasheet Rev. 1.3 11 2008-01-09 HITFET BTS3408G Terms VS IFLT VFLT VIN1 IIN1 IN1 IIN2 IN2 VIN2 IENA VENA ENA IS VS FAULT ID1 OUT1 VDS1 ID2 OUT2 GND VDS2 VBB Figure 6 Input circuit (ESD protection) Figure 8 Application Circuit VBB ESD zener diodes are not designed for DC current. Figure 7 Inductive and over voltage output clamp LOAD uC Vcc INT Px.1 Px.2 Py.1 GND 3408 VS FAULT IN1 OUT1 IN2 OUT2 ENA GND line VAZ Drain VDS Power DMOS Source ID Datasheet Rev. 1.3 12 2008-01-09 HITFET BTS3408G Timing diagrams Figure 9 ENA INx VDSx t IDx 0.9*ID 0.1*ID ton toff t Characteristics 1. Max. allowable Power Dissipation Ptot = f(Tamb) 1 Switching a resistive load P to t 6cm ² W 0 ,8 m in . fo o tp rin t 0 ,6 0 ,4 Figure 10 Switching an inductive load 0 ,2 ENA INx VDS(AZ) VDSx VBB t IDx t 0 -5 0 -2 5 0 25 50 75 °C 100 125 150 T am b 2. On-state Resistance RON = f(Tj); ID = 0.2 A; VS = 5 V 1000 R ON 9Ω m0 0 800 Figure 11 ENA INx IDx Short circuit 700 600 500 400 300 m a x. typ . t ϑjx FAULT thermal hysteresis 200 100 0 -5 0 -2 5 0 25 50 75 t °C 100 125 150 T j Datasheet Rev. 1.3 13 2008-01-09 HITFET BTS3408G 3. Typ. Short Circuit Current 5. Typ. Output leakage current ID(lim) = f(Tj) 2 IDSS = f(Tj);VS = 18 V; VDS = 60 V 2 I D (lim ) t yp . A 1 ,5 I DSS 1 ,6 µA t yp . 1 ,2 1 0 ,8 0 ,5 0 ,4 0 -5 0 -2 5 0 25 50 75 0 °C 100 125 150 T j -5 0 -2 5 0 25 50 75 °C 100 125 150 T j 4. Typ. Supply current in Standby mode IS(stby) = f(Tj);VS = 5 V 10 I S (s tb y) µ8 A t yp . 6 4 2 0 -5 0 -2 5 0 25 50 75 °C 100 125 150 T j Datasheet Rev. 1.3 14 2008-01-09 HITFET BTS3408G Datasheet Rev. 1.3 15 2008-01-09 HITFET BTS3408G Package Outline 0.35 x 45˚ 1.75 MAX. 0.175 ±0.07 (1.45) 4 -0.21) 0.19 +0.06 C 1.27 0.41+0.1 2) -0.06 0.2 M 0.1 A B 8x B 6 ±0.2 0.64 ±0.25 0.2 M 8 MAX. C 8x GPS01181 8 5 1 4 5 -0.2 1) Index Marking A 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Lead width can be 0.61 max. in dambar area Figure 12 PG-DSO8-36 (Plastic Green Dual Small Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Sorts of Packing Package outlines for tubes, trays etc. are contained in our SMD = Surface Mounted Device Datasheet Rev. 1.3 16 Dimensions in mm 2008-01-09 HITFET BTS3408G Revision History Version Rev. 1.3 Rev. 1.2 Date Changes 2008-01-09 Changed package outline drawing, updated package name 2007-06-15 Released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list AEC Stress Test Qualification added to the feature list Package information updated to green Green explanation added removed order number 2005-10-10 Released production version Rev. 1.1 Datasheet Rev. 1.3 17 2008-01-09 HITFET BTS3408G Edition 2008-01-09 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Datasheet Rev. 1.3 18 2008-01-09