BTS3410G

Smart Low Side Power Switch HITFET BTS 3410G Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown with auto restart • Green product (RoHS compliant) · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) ID(Nom) EAS 42 200 1.3 150 V mW A mJ Application · All kinds of resistive, inductive and capacitive loads in switching or linear applications · µC compatible power switch for 12 V DC applications · Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded protection functions. Vbb M HITFET â In1 Pin 2 Drain1 Pin 7and 8 Logic Channel 1 Pin 1 Source1 Drain2 Pin 5and 6 In2 Pin 4 Logic Channel 2 Source2 Pin 3 Complete product spectrum and additional information http://www.infineon.com/hitfet Datasheet 1 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Pin Description Pin 1 2 3 4 5 6 7 8 Symbol S1 IN1 S2 IN2 D2 D2 D1 D1 Function Source Channel 1 Input Channel 1 Source Channel 2 Input Channel 2 Drain Channel 2 Drain Channel 2 Drain Channel 1 Drain Channel 1 Pin Configuration (Top view) S1 IN1 S2 IN2 1· 2 3 4 8 7 6 5 D1 D1 D2 D2 PG- DSO-8-25 HITFET â Drain1 Pin 7, 8 Current Limitation OvervoltageProtection Vbb In1 Pin 2 Gate-Driving Unit M ESD Overload Protection Over- temperature Protection Short circuit Protection Pin 1 Source1 Drain2 Pin 5, 6 Current Limitation OvervoltageProtection Vbb In2 Pin 4 Gate-Driving Unit M ESD Overload Protection Over- temperature Protection Short circuit Protection Pin 3 Source2 Datasheet 2 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Symbol Drain source voltage Drain source voltage for short circuit protection 1) Tj = -40...150 °C Continuous input current1) -0.2V £ VIN £ 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation2)5) TA = 85 °C Unclamped single pulse inductive energy1) each channel Load dump protection VLoadDump1)3) = VA + VS VIN = 0 and 10 V, t d = 400 ms, RI = 2 W, RL = 9 W, VA = 13.5 V Electrostatic discharge voltage1) according to Jedec norm EIA/JESD22-A114-B, Section 4 (Human Body Model) Value 42 18 Unit V VDS VDS(SC) IIN mA no limit | IIN | £ 2 Tj Tstg Ptot EAS VLD -40 ...+150 -55 ... +150 0.8 150 50 °C W mJ V VESD 2 kV Thermal resistance junction - ambient: per channel one channel on both channels on R thJA 100 160 K/W @ 6 cm 2 cooling area2) 1not subject to production test, specified by design 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5 not subject to production test, calculated by R THJA and Rds(on) Datasheet 3 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40 ... +150°C VDS = 32 V, VIN = 0 V Input threshold voltage ID = 0.3 mA, Tj = 25 °C ID = 0.3 mA, Tj = 150 °C On state input current On-state resistance VIN = 5 V, ID = 1.4 A, Tj = 25 °C VIN = 5 V, ID = 1.4 A, Tj = 150 °C On-state resistance VIN = 10 V, I D = 1.4 A, T j = 25 °C VIN = 10 V, I D = 1.4 A, T j = 150 °C Nominal load current per channel5) VDS = 0.5 V, Tj < 150°C, VIN = 10 V, T A = 85 °C, one channel on both channels on Current limit (active if VDS>2.5 V)2) VIN = 10 V, VDS = 12 V, t m = 200 µs ID(lim) 1.3 1 5 1.65 1.3 7.5 10 ID(Nom) R DS(on) 150 280 200 400 A IIN(on) R DS(on) 190 350 240 480 VIN(th) 1.3 0.8 1.7 10 2.2 30 µA mW V IDSS 1.5 10 µA VDS(AZ) 42 55 V Symbol min. Values typ. max. Unit 1not subject to production test, specified by design 2Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on cond and a short circuit occurs, these values might be exceeded for max. 50 µs. 5 not subject to production test, calculated by R THJA and Rds(on) Datasheet 4 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Dynamic Characteristics Turn-on time VIN to 90% ID : ton toff -dVDS/dt on dVDS/dtoff 45 60 0.4 0.6 100 100 1.5 1.5 V/µs µs RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Protection Functions1) Thermal overload trip temperature Thermal hysteresis2) Input current protection mode Input current protection mode Tj = 150 °C Unclamped single pulse inductive energy2) each channel ID = 0.9 A, Tj = 25 °C, Vbb = 12 V EAS 150 mJ Tjt DT jt IIN(Prot) IIN(Prot) 150 25 175 10 50 40 300 300 °C K µA Symbol min. Values typ. max. Unit Inverse Diode Inverse diode forward voltage IF = 7 A, tm = 250 µs, VIN = 0 V, tP = 300 µs 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2not subject to production test, specified by design VSD - 1 - V Datasheet 5 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Block diagram Terms Inductive and overvoltage output clamp RL V I IN IN HITFET S VIN D ID VDS Vbb Z D S HITFET Input circuit (ESD protection) Short circuit behaviour Gate Drive Input V IN Source/ Ground IIN ID S T j Datasheet 6 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G 1 Overall maximum allowable power dissipation; P tot = f(TS) resp. P tot = f(TA) @ R thJA=80 K/W 3 2 On-state resistance R ON = f(Tj ); ID=1.4A; V IN=10V 500 mW W 400 T max. RDS(on) Ptot 2 T S 350 300 250 200 A typ. 1.5 1 150 100 50 0 -50 0.5 -25 0 25 50 75 100 °C Tj 150 0 -50 -25 0 25 50 75 100 125 °C 175 Tj 3 On-state resistance R ON = f(T j); ID= 1.4A; V IN=5V 500 4 Typ. input threshold voltage VIN(th) = f(Tj); ID = 0.15 mA; VDS = 12V 2 V mW 400 max. 1.6 typ. RDS(on) 350 300 250 200 150 100 50 0 -50 VGS(th) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 °C 175 -25 0 25 50 75 100 °C 150 Tj Tj Datasheet 7 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G 5 Typ. transfer characteristics I D=f(V IN); VDS=12V; T Jstart=25°C 8 A 6 Typ. short circuit current ID(lim) = f(Tj); VDS=12V Parameter: V IN 10 A 8 6 5 ID(lim) 7 6 5 5V ID Vin=10V 4 3 4 3 2 2 1 1 0 -50 0 0 1 2 3 4 5 6 7 8 V 10 -25 0 25 50 75 100 125 °C 175 VIN Tj 7 Typ. output characteristics I D=f(V DS); T Jstart=25°C Parameter: V IN 10 A Vin=10V 7V 8 Typ. off-state drain current IDSS = f(T j) 11 µA max. 8 6V 9 8 7 IDSS 5V 4V ID 6 5 4 7 6 5 4 3 3V 3 2 1 typ. 2 1 0 0 1 2 3 4 V 6 0 -50 -25 0 25 50 75 100 125 °C 175 VDS Tj Datasheet 8 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G 9 Typ. overload current ID(lim) = f(t), Vbb=12 V, no heatsink Parameter: Tjstart 12 10 Typ. transient thermal impedance ZthJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T ; one channel on 10 2 K/W A -40°C 10 1 ID(lim) 8 85°C ZthJA 10 0 25°C 6 150°C 4 10 -1 2 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 D=0 0 0 0.5 1 1.5 2 2.5 3 ms 4 10 -2 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 s tP 10 4 t 11 Determination of ID(lim) ID(lim) = f(t); t m = 200µs Parameter: TJstart 12 12 Typ. transient thermal impedance ZthJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T ; both channels on 10 3 K/W A 10 2 ID(lim) 8 25°C ZthJA -40°C 10 1 6 85°C 10 0 4 150°C 10 -1 2 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 D=0 0 0 0.1 0.2 0.3 0.4 ms 0.55 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s tP 10 4 t Datasheet 9 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Package Outlines 1 Package Outlines 0.35 x 45˚ 1.75 MAX. 0.175 ±0.07 (1.45) 4 -0.2 C 1) 0.19 +0.06 6 ±0.2 1.27 0.41+0.1 2) -0.06 0.2 M 0.1 A B 8x B 0.64 ±0.25 0.2 M 8 MAX. C 8x GPS01181 Dimensions in mm Rev. 1.3, 2007-11-06 8 5 1 4 1) A 5 -0.2 Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Lead width can be 0.61 max. in dambar area Figure 1 PG-DSO8-25 (Plastic Green Dual Small Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Datasheet 10 Smart Low Side Power Switch HITFET BTS 3410G Revision History 2 Version Rev. 1.3 Rev. 1.2 Revision History Date 2007-11-06 2007-06-18 Changes updated package drawing of green package released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green package naming Green explanation added released production version Rev. 1.1 2004-03-05 Datasheet 11 Rev. 1.3, 2007-11-06 Edition 2007-11-06 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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