BTS721L1_10

Smart High-Side Power Switch Smart High-Side Power Switch PROFET BTS721L1 Data Sheet Rev. 1.3, 2010-03-16 Automotive Power Smart High-Side Power Switch BTS721L1 Smart Four Channel Highside Power Switch Features • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Product Summary Overvoltage Protection Operating voltage active channels: On-state resistance RON Nominal load current ,/120 Current limitation ,/6&U Vbb(AZ) 43 V Vbb(on) 5.0 ... 34 V two parallel four parallel one 100 50 25 mΩ 2.9 4.3 6.3 A 8 8 8 A PG-DSO20 P-DSO-20 Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitive loads • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Pin Definitions and Functions Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 Symbol Function Vbb Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 4 and also for low thermal resistance IN1 Input 1 .. 4, activates channel 1 .. 4 in case of IN2 logic high signal IN3 IN4 OUT1 Output 1 .. 4, protected high-side power output OUT2 of channel 1 .. 4. Design the wiring for the OUT3 max. short circuit current OUT4 ST1/2 Diagnostic feedback 1/2 of channel 1 and channel 2, open drain, low on failure ST3/4 Diagnostic feedback 3/4 of channel 3 and channel 4, open drain, low on failure GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2) GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4) Pin configuration (top view) Vbb GND1/2 IN1 ST1/2 IN2 GND3/4 IN3 ST3/4 IN4 Vbb 1 2 3 4 5 6 7 8 9 10 • 20 19 18 17 16 15 14 13 12 11 Vbb Vbb OUT1 OUT2 Vbb Vbb OUT3 OUT4 Vbb Vbb 1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Data Sheet 2 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Block diagram Four Channels; Open Load detection in on state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 ,1 ,1 67 287  &KDQQHO  287  /RDG  *1' 352)(7 6LJQDO *1' &KLS   5 5 2 2 *1' /RDG *1' &KLS  /HDGIUDPH FRQQHFWHG WR SLQ         Data Sheet 3 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Maximum Ratings at Tj = 25°C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj,start = -40 ...+150°C Load current (Short-circuit current, see page 5) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3) = 2 Ω, td = 200 ms; IN = low or high, each channel loaded with RL = 4.7 Ω, Operating temperature range Storage temperature range Power dissipation (DC)5 Ta = 25°C: Ta = 85°C: (all channels active) Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C5), IL = 2.9 A, ZL = 58 mH, 0 Ω one channel: IL = 4.3 A, ZL = 58 mH, 0 Ω two parallel channels: IL = 6.3 A, ZL = 58 mH, 0 Ω four parallel channels: see diagrams on page 9 and page 10 Symbol Values 43 34 self-limited 60 -40 ...+150 -55 ...+150 3.7 1.9 Unit V V A V °C W Vbb Vbb IL VLoad Tj Tstg Ptot 4) dump EAS 0.3 0.65 1.5 1.0 -10 ... +16 ±2.0 ±5.0 J Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagram page 8 VESD VIN IIN IST kV V mA Thermal resistance junction - soldering point5),6) junction - ambient5) each channel: one channel active: all channels active: Rthjs Rthja 15 41 34 K/W 2) 3) 4) 5) 6) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input protection is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. See page 15 Soldering point: upper side of solder edge of device pin 15. See page 15 Data Sheet 4 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Electrical Characteristics Parameter and Conditions, each of the four channels at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT) each channel, Tj = 25°C: RON IL = 2 A Tj = 150°C: two parallel channels, Tj = 25°C: four parallel channels, Tj = 25°C: Nominal load current one channel active: two parallel channels active: four parallel channels active: 5), T = 85°C, T ≤ 150°C Device on PCB a j Output current while GND disconnected or pulled up; Vbb = 30 V, VIN = 0, see diagram page 9 Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C Slew rate on Tj =-40...+150°C: 10 to 30% VOUT, RL = 12 Ω, Slew rate off Tj =-40...+150°C: 70 to 40% VOUT, RL = 12 Ω, Operating Parameters Operating voltage7) Undervoltage shutdown Undervoltage restart -- 85 170 43 22 2.9 4.3 6.3 -200 200 --- 100 200 50 25 -- mΩ IL(NOM) 2.5 3.8 5.9 -80 80 0.1 0.1 A IL(GNDhigh) ton toff dV/dton -dV/dtoff 10 400 400 1 1 mA µs V/µs V/µs Tj =-40...+150°C: Tj =-40...+150°C: Tj =-40...+25°C: Tj =+150°C: Undervoltage restart of charge pump Tj =-40...+150°C: see diagram page 14 Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: 8) Overvoltage protection Tj =-40...+150°C: I bb = 40 mA Standby current, all channels off Tj =25°C: VIN = 0 Tj =150°C: Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) ∆Vbb(under) 5.0 3.5 ---34 33 -42 --- ---5.6 0.2 --0.5 47 28 44 34 5.0 5.0 7.0 7.0 -43 ---60 70 V V V V V V V V V µA Vbb(over) Vbb(o rst) ∆Vbb(over) Vbb(AZ) Ibb(off) 7) 8) At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V see also VON(CL) in circuit diagram on page 8. Data Sheet 5 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Parameter and Conditions, each of the four channels at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max --12 Unit µA Leakage output current (included in Ibb(off)) IL(off) VIN = 0 Operating current 9), VIN = 5V, Tj =-40...+150°C IGND = IGND1/2 + IGND3/4, one channel on: IGND four channels on: Protection Functions10) Initial peak short circuit current limit, (see timing diagrams, page 13) --- 2 8 3 12 mA each channel, Tj =-40°C: IL(SCp) 11 18 25 9 14 22 Tj =25°C: 5 8 14 Tj =+150°C: two parallel channels twice the current of one channel four parallel channels four times the current of one channel Repetitive short circuit current limit, Tj = Tjt each channel IL(SCr) -8 --8 -two parallel channels -8 -four parallel channels (see timing diagrams, page 13) A A Initial short circuit shutdown time Tj,start =-40°C: toff(SC) Tj,start = 25°C: VON(CL) Tjt ∆Tjt ---150 -- 15 12 47 -10 ------ ms (see page 12 and timing diagrams on page 13) Output clamp (inductive load switch off)11) at VON(CL) = Vbb - VOUT Thermal overload trip temperature Thermal hysteresis Reverse Battery Reverse battery voltage 12) Drain-source diode voltage (Vout > Vbb) IL = - 2.9 A, Tj = +150°C V °C K -Vbb -VON --- -610 32 -- V mV 9) Add IST, if IST > 0 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 11) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest VON(CL) 12) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 8). 10) Data Sheet 6 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Parameter and Conditions, each of the four channels at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Diagnostic Characteristics Open load detection current, (on-condition) 20 -400 each channel, Tj = -40°C: I L (OL) 20 -300 Tj = 25°C: 20 -300 Tj = 150°C: twice the current of one channel two parallel channels four times the current of one channel four parallel channels 13) Open load detection voltage Tj =-40..+150°C: VOUT(OL) 2 3 4 Internal output pull down (OUT to GND), VOUT = 5 V Tj =-40..+150°C: RO 4 10 30 1 mA V kΩ Input and Status Feedback14) Input resistance (see circuit page 8) Tj =-40..+150°C: Tj =-40..+150°C: RI VIN(T+) VIN(T-) ∆ VIN(T) IIN(off) 2.5 1.7 1.5 -1 20 100 --- 3.5 --0.5 -50 320 5 200 6 3.5 --50 90 800 20 600 kΩ V V V µA µA µs µs µs Input turn-on threshold voltage Input turn-off threshold voltage Tj =-40..+150°C: Input threshold hysteresis Off state input current VIN = 0.4 V: Tj =-40..+150°C: On state input current VIN = 5 V: Tj =-40..+150°C: Delay time for status with open load after switch off (other channel in off state) (see timing diagrams, page 14), Tj =-40..+150°C: Delay time for status with open load after switch off (other channel in on state) (see timing diagrams, page 14), Tj =-40..+150°C: Status invalid after positive input slope Tj =-40..+150°C: (open load) Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: Tj =-40...+25°C, IST = +1.6 mA: ST low voltage Tj = +150°C, IST = +1.6 mA: IIN(on) td(ST OL4) td(ST OL5) td(ST) VST(high) VST(low) 5.4 --- 6.1 --- -0.4 0.6 V 13) 14) External pull up resistor required for open load detection in off state. If ground resistors RGND are used, add the voltage drop across these resistors. Data Sheet 7 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Truth Table Channel 1 and 2 Channel 3 and 4 (equivalent to channel 1 and 2) Normal operation Chip 1 Chip 2 IN1 IN3 IN2 IN4 OUT1 OUT3 OUT2 OUT4 ST1/2 ST3/4 BTS 721L1 Open load Channel 1 (3) L L H H L L H L H X L L H L H X L X H L H X X X L H L H L H X L L H L H X L L H L H X X X L H X L L H H Z Z H L H X H H H L H X L L L L L X X L L H L H L H X Z Z H L H X H H H L L L X X L L L H H H H H(L15)) H L H(L15)) H L L16) H H(L17)) L16) H H(L17)) H L L H L H L H Channel 2 (4) Short circuit to Vbb Channel 1 (3) Channel 2 (4) Overtemperature both channel Channel 1 (3) Channel 2 (4) Undervoltage/ Overvoltage L = "Low" Level H = "High" Level X = don't care Z = high impedance, potential depends on external circuit Status signal valid after the time delay shown in the timing diagrams Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4 have to be configured as a 'Wired OR' function with a single pull-up resistor. Terms 9 ,EE EE , ,1 , ,1 , 67 9 ,1 9,1 967    /HDGIUDPH ,1 ,1 9EE 287 352)(7 &KLS  287  9 21 9 21 , / , / 9 287 , *1' 9287 /HDGIUDPH , ,1 , ,1 , 67 9 ,1 9,1 967    ,1 ,1 9EE 287 352)(7 &KLS  287   921 9 21 , / , / 9 287 , *1' 9287  67 *1'  5 *1' 67 *1'  5 *1' Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20 External RGND optional; two resistors RGND1/2 ,RGND3/4 = 150 Ω or a single resistor RGND = 75 Ω for reverse battery protection up to the max. operating voltage. 15) 16) With additional external pull up resistor An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 17) Low resistance to V may be detected by no-load-detection bb Data Sheet 8 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Input circuit (ESD protection), IN1...4 ,1 5 , Overvoltage protection of logic part GND1/2 or GND3/4  9 EE 9 (6'=' , *1' ,1 5, /RJLF = , , 5 67 ,1 67 9 ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). = *1' 5 *1' 6LJQDO *1' Status output, ST1/2 or ST3/4 9 VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 kΩ typ., RGND = 150 Ω 5 6721 67 Reverse battery protection “ 9  9EE *1' (6' =' 5 67 ,1 67 5, /RJLF 287 3RZHU ,QYHUVH 'LRGH ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). *1' Inductive and overvoltage output clamp, OUT1...4 9EE 9= 9 21 287 5 *1' 6LJQDO *1' 5/ 3RZHU *1' RGND = 150 Ω, RI = 3.5 kΩ typ, Temperature protection is not active during inverse current operation. 352)(7 3RZHU *1' VON clamped to VON(CL) = 47 V typ. Data Sheet 9 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Open-load detection, OUT1...4 ON-state diagnostic condition: VON < RON·IL(OL); IN high  9 EE GND disconnect with GND pull up (channel 1/2 or 3/4) 9 ,1 ,1 9 ,1 ,1 67 9EE 287 352)(7 287 *1' 21 921 287 /RJLF XQLW 2SHQ ORDG GHWHFWLRQ 9 9 EE 67 9 *1' Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available. OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Vbb disconnect with energized inductive load 5 (;7 ,1 KLJK ,1 9EE 287 352)(7 287 *1' 2)) 9 287 67 /RJLF XQLW 2SHQ ORDG GHWHFWLRQ 5 2 9 6LJQDO *1' EE GND disconnect (channel 1/2 or 3/4) 9 ,EE ,1 ,1 67 9 9 9 ,1 ,1 67 9EE 287 352)(7 287 *1' 9 *1' For an inductive load current up to the limit defined by EAS (max. ratings see page 3 and diagram on page 10) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load the whole load current flows through the GND connection. EE Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+). Due to VGND > 0, no VST = low signal available. Semiconductor Group Data Sheet 9 10 2003-Oct-01 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Inductive load switch-off energy dissipation ( EE ( $6 9EE 352)(7 67 *1' =/ 287 (/RDG ,1 ^ 5 / / (/ (5 Energy stored in load inductance: EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is 2 EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: IL· L (V + |VOUT(CL)|) 2·RL bb IL·RL EAS= OQ (1+ |V OUT(CL)| ) Maximum allowable load inductance for a single switch off (one channel)5) / I ,/  Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω L [mH]              IL [A] Data Sheet 11 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Typ. on-state resistance RON [mOhm] Typ. standby current Ibb(off) [µA] ; IL = 2 A, IN = high ; Vbb = 9...34 V, IN1...4 = low Vbb [V] Tj [°C] Typ. open load detection current IN = high IL(OL) [mA] Typ. initial short circuit shutdown time ; Vbb =12 V t o ff(S C ) [ms ec ] 16 14 12 10 8 6 4 2 0 -40 -25 0 25 50 75 100 125 15 T j , s ta rt Vbb [V] Data Sheet 12 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Timing diagrams Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels Figure 1a: Vbb turn on: ,1 ,1 ,1 9 EE W G67  Figure 2b: Switching an inductive load 67 9 287 9 287 9 287 ,/ 67 RSHQ GUDLQ W , /2/ W *) if the time constant of load is too large, open-load-status may occur Figure 2a: Switching a lamp: ,1 Figure 3a: Turn on into short circuit: shut down by overtemperature, restart by cooling ,1 RWKHU FKDQQHO QRUPDO RSHUDWLRQ 67 , 9 287 / , /6&S , /6&U , / W The initial peak current should be limited by the lamp and not by the initial short circuit current IL(SCp) = 14 A typ. of the device. 67 W RII6& W Heating up of the chip may require several milliseconds, depending on external conditions (toff(SC) vs. Tj,start see page 12) Data Sheet 13 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Figure 3b: Turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2) ,1 Figure 5a: Open load: detection in ON-state, open load occurs in on-state ,1 ,1 FKDQQHO  QRUPDO RSHUDWLRQ , / , / , /6&S 9287 , /6&U ,/ FKDQQHO  RSHQ ORDG W G67 2/ QRUPDO ORDG RSHQ ORDG W G67 2/ W G67 2/ W W 67 RII6& W G67 2/ 67 W td(ST OL1) = 30 µs typ., td(ST OL2) = 20 µs typ Figure 4a: Overtemperature: Reset if Tj