BUZ20

SIPMOS ® Power Transistor BUZ 20 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 20 100 V 13.5 A 0.2 Ω TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 13.5 A TC = 28 ˚C Pulsed drain current IDpuls 54 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 13.5 7.9 mJ ID = 13.5 A, VDD = 25 V, RGS = 25 Ω L = 486 µH, Tj = 25 ˚C Gate source voltage Power dissipation 59 VGS Ptot ± 20 75 V W TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 1.67 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 20 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 100 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.1 3 4 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 100 V, VGS = 0 V, Tj = 25 ˚C VDS = 100 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) 0.17 0.2 Ω VGS = 10 V, ID = 8.5 A Data Sheet 2 05.99 BUZ 20 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance gfs 3 4.7 - S VDS≥ 2 * ID * RDS(on)max, ID = 8.5 A Input capacitance Ciss 400 530 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance Coss 120 180 VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss 70 105 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time 10 15 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time 45 70 td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time 55 75 tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω 40 55 Data Sheet 3 05.99 BUZ 20 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current IS 13.5 A TC = 25 ˚C Inverse diode direct current,pulsed ISM 54 V 1.4 1.6 ns 170 µC 0.3 - TC = 25 ˚C Inverse diode forward voltage VSD VGS = 0 V, IF = 27 A Reverse recovery time trr VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Data Sheet 4 05.99 BUZ 20 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 14 A 80 W 12 Ptot ID 60 11 10 9 8 50 40 7 6 30 5 4 20 3 2 1 0 0 10 0 0 20 40 60 80 100 120 ˚C 160 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 2 tp = 16.0µs Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A = DS / I D ID 10 1 V 100 µs ZthJC 10 0 R DS (o n) 1 ms 1 0 -1 10 ms D = 0.50 0.20 10 0 0.10 DC 1 0 -2 0.05 0.02 single pulse 0.01 10 -1 0 10 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Data Sheet 5 05.99 BUZ 20 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 30 A 26 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.65 Ptot = 75W l k VGS [V] a 4.0 Ω 0.55 a b c d e f g h i j ID 24 22 20 18 16 14 12 10 e g f i jb c d e RDS (on) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 V [V] = GS k 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 h f g h i j k 8 6 c d l 4 2 0 0 b a 0.05 V 26 0.00 0 a 4.5 4.0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 4 8 12 16 20 4 8 12 16 20 24 A 30 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 24 A 20 ID VDS≥2 x ID x RDS(on)max 6.0 S 5.0 gfs 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 V VGS 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 0 4 8 12 16 A ID 22 Data Sheet 6 05.99 BUZ 20 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 8.5 A, VGS = 10 V 0.65 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 0.55 98% RDS (on) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 VGS(th) 3.6 3.2 2.8 2.4 typ 2% 98% typ 2.0 1.6 1.2 0.15 0.10 0.05 0.00 -60 -20 20 60 100 ˚C 160 0.8 0.4 0.0 -60 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 2 nF C A IF 10 0 10 1 Ciss 1 0 -1 Coss Crss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BUZ 20 Avalanche energy EAS = ƒ(Tj) parameter: ID = 13.5 A, VDD = 25 V RGS = 25 Ω, L = 486 µH 60 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 15 A 16 V 50 EAS 45 40 VGS 12 0,2 VDS max 0,8 VDS max 10 35 30 25 6 20 15 10 2 5 0 20 40 60 80 100 120 ˚C 160 0 0 10 20 30 40 50 nC 70 4 8 Tj QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 120 V 116 V(BR)DSS 14 1 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99