BUZ31

BUZ 31 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 31 200 V 14.5 A 0.2 Ω TO-220 AB C67078-S.1304-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 14.5 A TC = 30 ˚C Pulsed drain current IDpuls 58 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 14.5 9 mJ ID = 14.5 A, VDD = 50 V, RGS = 25 Ω L = 1.42 mH, Tj = 25 ˚C Gate source voltage Power dissipation 200 VGS Ptot ± 20 95 V W TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 1.32 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 31 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 200 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.1 3 4 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) 0.16 0.2 Ω VGS = 10 V, ID = 9 A Data Sheet 2 05.99 BUZ 31 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance gfs 5 10 - S VDS≥ 2 * ID * RDS(on)max, ID = 9 A Input capacitance Ciss 840 1120 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance Coss 180 270 VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss 95 150 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time 12 20 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time 50 75 td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time 150 200 tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω 60 80 Data Sheet 3 05.99 BUZ 31 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current IS 14.5 A TC = 25 ˚C Inverse diode direct current,pulsed ISM 58 V 1.1 1.6 ns 170 µC 1.1 - TC = 25 ˚C Inverse diode forward voltage VSD VGS = 0 V, IF = 29 A Reverse recovery time trr VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Data Sheet 4 05.99 BUZ 31 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 15 A 100 W 13 Ptot 80 70 60 50 40 30 20 10 0 0 ID 12 11 10 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 ˚C 160 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 2 tp = 13.0µs Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W R 10 1 DS (o n) = ID DS /I A D 100 µs ZthJC V 10 0 1 ms 1 0 -1 D = 0.50 10 ms 0.20 0.10 1 0 -2 0.05 0.02 0.01 single pulse 10 0 DC 10 -1 10 0 10 1 10 2 10 V -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Data Sheet 5 05.99 BUZ 31 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 32 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.65 Ptot = 95W l kj i h g Ω fa VGS [V] 4.0 b c 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 a b c d e A 0.55 ID 24 RDS (on) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 j f h i k g 20 e d e f 16 g d h i 12 c j k l 8 b a 0.15 0.10 V [V] = GS 0.05 a 4.5 4.0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 4 0 0 h i j k 8.0 9.0 10.0 20.0 2 4 6 8 10 V 13 0.00 0 4 8 12 16 20 A 28 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 16 VDS≥2 x ID x RDS(on)max 13 S A ID gfs 11 10 9 12 10 8 7 8 6 6 5 4 4 3 2 1 0 0 1 2 3 4 5 6 7 8 V VGS 2 10 0 0 2 4 6 8 10 12 A ID 16 Data Sheet 6 05.99 BUZ 31 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 9 A, VGS = 10 V 0.75 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 0.65 98% RDS (on)0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 VGS(th) 3.6 3.2 2.8 2.4 2.0 typ 2% 98% 1.6 typ 1.2 0.8 0.4 0.0 -60 -20 20 60 100 ˚C 160 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 2 pF C A IF 10 3 Ciss 10 1 Coss 10 2 Crss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BUZ 31 Avalanche energy EAS = ƒ(Tj) parameter: ID = 14.5 A, VDD = 50 V RGS = 25 Ω, L = 1.42 mH 220 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 20 A 16 V EAS 180 160 140 120 VGS 12 10 0,2 VDS max 8 0,8 VDS max 100 80 60 40 2 20 0 20 40 60 80 100 120 ˚C 160 0 0 10 20 30 40 50 60 70 90 6 4 Tj QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99