BUZ73

SIPMOS ® Power Transistor BUZ 73 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 200 V ID 7A RDS(on) 0.4 Ω Package Ordering Code BUZ 73 TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 28 ˚C ID A 7 Pulsed drain current TC = 25 ˚C IDpuls 28 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.67 mH, Tj = 25 ˚C 7 6.5 mJ 120 VGS Ptot Gate source voltage Power dissipation TC = 25 ˚C ± 20 40 V W Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 3.1 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 73 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 200 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current VDS = 200 V, V GS = 0 V, Tj = 25 ˚C VDS = 200 V, V GS = 0 V, Tj = 125 ˚C IGSS 0.1 10 1 100 nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance VGS = 10 V, ID = 4.5 A Ω 0.3 0.4 Data Sheet 2 05.99 BUZ 73 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 4.5 A gfs S 3 4.2 pF 400 530 Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 85 130 Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz td(on) 45 70 ns Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tr 10 15 Rise time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(off) 40 60 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tf 55 75 Fall time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω - 30 40 Data Sheet 3 05.99 BUZ 73 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 ˚C IS A 7 Inverse diode direct current,pulsed TC = 25 ˚C ISM V SD - 28 V Inverse diode forward voltage VGS = 0 V, IF = 14 A trr 1.3 1.7 ns Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs Qrr 200 µC Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs - 0.6 - Data Sheet 4 05.99 BUZ 73 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 7.5 A 45 W 6.5 Ptot 35 30 25 20 15 10 5 0 0 ID 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 2 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A t = 22.0µs p ID /I D DS ZthJC 10 1 100 µs 10 0 R DS (o n) =V 1 ms 10 -1 D = 0.50 0.20 10 0 10 ms 0.10 10 -2 single pulse 0.05 0.02 0.01 DC 10 -1 10 0 10 1 10 2 V 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Data Sheet 5 05.99 BUZ 73 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 16 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 1.3 Ptot = 40W l kj i h g VGS [V] Ω 1.1 fa 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 a b c d e A ID 12 RDS (on) b c 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 VGS [V] = a 4.5 4.0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 10 d e e f 8 g dh i 6 c j f h j k g i k 10.0 l 20.0 4 b 2 a 0 0 2 4 6 8 V 11 0 2 4 6 8 10 A 14 VDS ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 13 A 11 ID parameter: tp = 80 µs, V DS≥2 x ID x RDS(on)max 6.0 S 5.0 gfs 10 9 8 4.5 4.0 3.5 7 3.0 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 V VGS 2.5 2.0 1.5 1.0 0.5 0.0 10 0 2 4 6 8 A ID 12 Data Sheet 6 05.99 BUZ 73 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 4.5 A, VGS = 10 V 1.9 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 1.6 98% RDS (on) 1.4 VGS(th) 3.6 3.2 typ 1.2 1.0 0.8 2.8 2.4 2.0 2% 98% 0.6 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 ˚C 160 typ 0.4 0.2 0.0 -60 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 nF C A IF 10 0 10 1 Ciss 10 -1 Coss Crss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BUZ 73 Avalanche energy EAS = ƒ(Tj) parameter: ID = 7 A, VDD = 50 V RGS = 25 Ω, L = 3.67 mH 130 mJ 110 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 14 A 16 V EAS 100 90 80 70 VGS 12 10 0,2 VDS max 8 0,8 VDS max 60 50 40 30 20 10 0 20 0 40 60 80 100 120 ˚C 160 0 4 8 12 16 20 24 28 32 nC 38 4 6 2 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99