ESD0P2RF-02LS

ESD0P2RF... Bi-directional Ultra Low Capacitance TVS Diode • ESD / transient protection of RF signal lines according to: IEC61000-4-2 (ESD): ±20kV (contact) IEC61000-4-4 (EFT): 40 A (5 / 50 ns) IEC61000-4-5 (Surge): 3 A (8 / 20 µs) • Extremely small form factor down to 0.62 x 0.32 x 0.31 mm³ • Very low dynamic resistance • Max. working voltage: ±5.3 V • Extremely low capacitance: 0.2 pF typ. • Very low reverse current < 1 nA typ. • Very low series inductance down to 0.2 nH typ. • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Applications • ESD protection of sensitive RF signal lines • RF antenna protection, frontend module • GPS, mobile TV, FM radio, RKE, UWB ESD0P2RF-02LRH ESD0P2RF-02LS 1 2 Type ESD0P2RF-02LRH ESD0P2RF-02LS Package TSLP-2-17 TSSLP-2-1 Configuration 1 line, bi-directional 1 line, bi-directional Marking T T 1 2010-04-12 ESD0P2RF... Maximum Ratings at TA = 25°C, unless otherwise specified Parameter ESD contact discharge1), contact Peak pulse current ( tp = 8 / 20 µs)2) Operating temperature range Storage temperature 1V 2I Symbol VESD I pp T op T stg Value 20 3 -55...125 -55...150 Unit kV A °C ESD according to IEC61000-4-2 pp according to IEC61000-4-5 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Characteristics Reverse working voltage Breakdown voltage I(BR) = 1 mA, from pin 2 to 1 I(BR) = 1 mA, from pin 1 to 2 Reverse current VR = 5.3 V Clamping voltage IPP = 1 A, tp = 8/20 µs1) IPP = 3 A, tp = 8/20 µs1) Diode capacitance VR = 0 V, f = 1 MHz VR = 0 V, f = 1 GHz Dynamic resistance ( tp=30ns ) Series inductance ESD0P2RF-02LS ESD0P2RF-02LRH 1I Symbol min. VRWM V(BR) 7 7 IR VCL CT RD LS -5.3 Values typ.