MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
650V CoolMOS™ C6 Power Transistor IPW65R070C6
Data Sheet
Rev. 2.0, 2011-03-15 Final
Industrial & Multimarket
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
1
Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
drain pin 2
Features • • • • • Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive Qualified for industrial grade applications according to JEDEC1) Pb-free plating, Halogen free mold compound
gate pin 1
source pin 3
Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Table 1 Parameter
Key Performance Parameters Value 700 0.07 170 150 13 300 Package PG-TO247 Unit V nC A µJ A/µs Marking 65C6070 Related Links IFX CoolMOS Webpage IFX Design tools
VDS @ Tj,max
RDS(on),max
Qg,typ ID,pulse Eoss @ 400V
Body diode di/dt Type IPW65R070C6
1) J-STD20 and JESD22
Final Data Sheet
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650V CoolMOS™ C6 Power Transistor IPW65R070C6
Table of Contents
Table of Contents
1 2 3 4 5 6 7 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
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650V CoolMOS™ C6 Power Transistor IPW65R070C6
Maximum ratings
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified. Table 2 Parameter Continuous drain current Pulsed drain current
2) 1)
Maximum ratings Symbol Min. ID ID,pulse EAS EAR IAR dv/dt VGS Ptot Tj,Tstg IS IS,pulse dv/dt -20 -30 -55 2) 3)
Values Typ. Max. 53.5 33.8 150 1160 1.76 9.3 50 20 30 391 150 60 46.3 150 15
Unit A A mJ A V/ns V W °C Ncm A A V/ns A/µs
Note / Test Condition TC= 25 °C TC= 100°C TC=25 °C ID=9.3 A,VDD=50 V ID=9.3 A,VDD=50 V VDS=0...480 V static AC (f>1 Hz) TC=25 °C M3 and M3.5 screws TC=25 °C TC=25 °C VDS=0...400 V, ISD ID, Tj=25 °C
Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque Continuous diode forward current Diode pulse current Reverse diode dv/dt
Maximum diode commutation dif/dt 300 3) speed 1) Limited by Tj,max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG; Vpeak 7V; D=0; parameter tp
Final Data Sheet
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Rev. 2.0, 2011-03-15
650V CoolMOS™ C6 Power Transistor IPW65R070C6
Electrical characteristics diagrams Table 10 Typ. output characteristics Tj=25 °C Typ. output characteristics Tj=125 °C
ID=f(VDS); Tj=25 °C; parameter: VGS Table 11 Typ. drain-source on-state resistance
ID=f(VDS); Tj=125 °C; parameter: VGS
Drain-source on-state resistance
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); ID=17.6 A; VGS=10 V
Final Data Sheet
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650V CoolMOS™ C6 Power Transistor IPW65R070C6
Electrical characteristics diagrams Table 12 Typ. transfer characteristics Typ. gate charge
ID=f(VGS); VDS=20V Table 13 Avalanche energy
VGS=f(Qgate), ID=26.3 A pulsed
Drain-source breakdown voltage
EAS=f(Tj); ID=9.3 A; VDD=50 V
VBR(DSS)=f(Tj); ID=1.0 mA
Final Data Sheet
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650V CoolMOS™ C6 Power Transistor IPW65R070C6
Electrical characteristics diagrams Table 14 Typ. capacitances Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz Table 15 Forward characteristics of reverse diode
EOSS=f(VDS)
IF=f(VSD); parameter: Tj
Final Data Sheet
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650V CoolMOS™ C6 Power Transistor IPW65R070C6
Package outlines
6
Package outlines
Figure 1
Outlines TO-247, dimensions in mm/inches 11 Rev. 2.0, 2011-03-15
Final Data Sheet
650V CoolMOS™ C6 Power Transistor IPW65R070C6
Revision History
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Revision History
Revision History: 2011-03-15, Rev. 2.0 Previous Revision: Revision 2.0 Subjects (major changes since last revision) Release of final data sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com
Edition 2011-03-15 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
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Rev. 2.0, 2011-03-15