SPA11N60CFD

SPA11N60CFD CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified according to JEDEC0) for target applications Product Summary V DS R DS(on),max I D1) 600 0.44 11 V Ω A PG-TO220-3-31 Type SPA11N60CFD Package TO-220-3-31 Ordering Code SP000216317 Marking 11N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 1) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive2),3) Avalanche current, repetitive2),3) Drain source voltage slope Reverse diode d v /dt Maximum diode commutation speed Gate source voltage I D,pulse E AS E AR I AR dv /dt dv /dt di /dt V GS I D=11 A, V DS=480 V, T j=125 °C I S=11 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=5.5 A, V DD=50 V I D=11 A, V DD=50 V Value 11 7 28 340 0.6 11 80 40 600 ±20 ±30 33 -55 ... 150 W °C A V/ns V/ns A/µs V mJ Unit A Rev. 1.2 page 1 2006-05-15 SPA11N60CFD Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 3.8 62 K/W Values typ. max. Unit Soldering temperature, wave soldering T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V (BR)DS V GS(th) V GS=0 V, I D=11 A V DS=V GS, I D=1.9 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=7 A, T j=25 °C V GS=10 V, I D=7 A, T j=150 °C Gate resistance Transconductance RG g fs f =1 MHz, open drain |V DS|>2|I D|R DS(on)max, I D=7 A 600 3 700 4 5 V Zero gate voltage drain current I DSS - 1.1 - µA - 900 0.38 100 0.44 nA Ω - 1.02 0.86 8.3 S Rev. 1.2 page 2 2006-05-15 SPA11N60CFD Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related4) Effective output capacitance, time related5) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage 0) Values typ. max. Unit C iss C oss C rss C o(er) V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=480 V, V GS=10 V, I D=11 A, R G=6.8 Ω V GS=0 V, V DS=25 V, f =1 MHz - 1200 390 30 45 - pF - 85 34 18 43 7 ns Q gs Q gd Qg V plateau V DD=480 V, I D=11 A, V GS=0 to 10 V - 9 23 48 7.5 64 - nC V J-STD20 and JESD22 1) 2) Limited only by maximum temperature. Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 3) 4) 5) Rev. 1.2 page 3 2006-05-15 SPA11N60CFD Parameter Symbol Conditions min. Reverse Diode Diode continuous forward current 1) Diode pulse current 2) Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current IS I S,pulse V SD t rr Q rr I rrm V R=480 V, I F=I S, di F/dt =100 A/µs T C=25 °C V GS=0 V, I F=11 A, T j=25 °C 1.0 140 0.7 11 11 28 1.2 V ns µC A A Values typ. max. Unit Typical Transient Thermal Characteristics Symbol Value typ. R th1 R th2 R th3 R th4 R th5 0.0178 0.0931 0.228 0.559 1.58 K/W C th1 C th2 C th3 C th4 C th5 Unit Symbol Value typ. 0.0000989 0.000939 0.00303 0.0245 0.951 Ws/K Unit Rev. 1.2 page 4 2006-05-15 SPA11N60CFD 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 35 102 limited by on-state resistance 30 1 µs 25 101 10 µs P tot [W] 20 100 µs I D [A] 15 100 10 DC 1 ms 10 ms 5 0 0 40 80 120 160 10-1 100 101 102 103 T C [°C] V DS [V] 3 Max. transient thermal impedance I D=f(V DS); T j=25 °C parameter: D=t p/T 101 4 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: tp = 10µs V GS 35 0.5 30 10 V 100 0.2 0.1 25 20 V Z thJC [K/W] 0.05 20 10 -1 0.02 0.01 I D [A] 8V 15 single pulse 10-2 10 7V 6.5 V 6V 5.5 V 5 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 101 0 0 5 10 5V 15 20 t p [s] V DS [V] Rev. 1.2 page 5 2006-05-15 SPA11N60CFD 5 Typ. output characteristics I D=f(V DS); T j=150 °C parameter: tp = 10µs V GS 20 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 °C parameter: V GS 2 1.8 20 V 1.6 15 10 V 1.4 8V 5V 5.5 V 6V 6.5 V 7V R DS(on) [Ω ] 1.2 1 I D [A] 10 V 20 V 10 7V 0.8 0.6 6.5 V 5 6V 5.5 V 5V 0.4 0.2 0 0 0 5 10 15 20 0 2 4 6 8 10 12 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=7 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 1.2 40 1 C °25 30 0.8 R DS(on) [Ω ] 0.6 98 % typ I D [A] 20 C °150 0.4 10 0.2 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 12 T j [°C] V GS [V] Rev. 1.2 page 6 2006-05-15 SPA11N60CFD 9 Typ. gate charge V GS=f(Q gate); I D=11 A pulsed parameter: V DD 12 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 10 120 V 480 V 8 101 150 °C 25 °C 150 °C, 98% V GS [V] 6 I F [A] 25 °C, 98% 4 100 2 0 0 10 20 30 40 50 10-1 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche SOA I AR=f(t AR) parameter: T j(start) 11 10 12 Avalanche energy E AS=f(T j); I D=5.5 A; V DD=50 V 350 300 9 8 7 250 I AV [A] 6 5 4 3 2 125 °C 25 °C E AS [mJ] 103 104 200 150 100 50 1 0 10-3 10-2 10-1 100 101 102 0 20 60 100 140 180 t AR [µs] T j [°C] Rev. 1.2 page 7 2006-05-15 SPA11N60CFD 13 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=10 mA 14 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 700 104 Ciss 660 103 V BR(DSS) [V] C [pF] 620 102 Coss 580 101 Crss 540 -60 -20 20 60 100 140 180 100 0 100 200 300 400 500 T j [°C] V DS [V] 15 Typ. C oss stored energy E oss= f(V DS) 16 Typ. reverse recovery charge Q rr=f(T j);parameter: I D =11 A 8 1.2 7 1.1 6 1 5 E oss [µJ] 4 Q rr [µC] 0 100 200 300 400 500 600 0.9 3 0.8 2 0.7 1 0 0.6 25 50 75 100 125 V DS [V] T j [°C] Rev. 1.2 page 8 2006-05-15 SPA11N60CFD 17 Typ. reverse recovery charge Q rr=f(I S); parameter: di/ dt =100 A/µs 18 Typ. reverse recovery charge Q rr=f(di /dt ); parameter: I D=11 A 1.2 1.6 1.5 125 °C 1 1.4 1.3 0.8 1.2 Q rr [µC] Q rr [µC] 1.1 1 0.9 25 °C 0.6 125 °C 0.4 25 °C 0.8 0.7 0.6 1 3 5 7 9 11 100 300 500 700 900 0.2 I S [A] di/ dt [A/µs] Rev. 1.2 page 9 2006-05-15 SPA11N60CFD Definition of diode switching characteristics Rev. 1.2 page 10 2006-05-15 SPA11N60CFD PG-TO-220-3-31 (FullPAK) Rev. 1.2 page 11 2006-05-15 SPA11N60CFD Published by Infineon Technologies AG D-81726 München, Germany © Infineon Technologies AG 2006 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 12 2006-05-15