SPI07N65C3

SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO220-3-31 P-TO262-3-1 730 0.6 7.3 V Ω A P-TO220-3-1 2 1 P-TO220-3-1 23 • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP07N65C3 SPI07N65C3 SPA07N65C3 Package P-TO220-3-1 P-TO262-3-1 Ordering Code Q67040-S4624 Q67040-S4623 Marking 07N65C3 07N65C3 07N65C3 P-TO220-3-31 Q67040-S4622 Maximum Ratings Parameter Symbol Value SPP_I SPA Unit Continuous drain current TC = 25 °C TC = 100 °C ID 7.3 4.6 ID puls EAS EAR A 7.31) 4.61) 21.9 230 0.5 2.5 ±20 ±30 32 W A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=1.5A, VDD =50V 21.9 230 0.5 2.5 ±20 ±30 83 Avalanche energy, repetitive tAR limited by Tjmax2) ID=2.5A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage IAR VGS VGS Ptot Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature T j , Tstg -55...+150 °C Rev. 1.0 Page 1 2004-04-07 SPP07N65C3, SPI07N65C3 SPA07N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 V, ID = 7.3 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol min. RthJC Values typ. max. Unit Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) - 35 1.5 3.9 62 80 62 - K/W RthJC_FP RthJA RthJA_FP RthJA Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at T j=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=2.5A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=350µA, VGS=VDS VDS=600V, VGS=0V, Tj=25°C Tj=150°C Values typ. 700 3 0.5 0.54 1.46 0.8 max. 3.9 650 2.1 - Unit V µA 1 100 100 0.6 nA Ω Gate-source leakage current I GSS VGS=20V, VDS=0V VGS=10V, ID=4.6A Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Rev. 1.0 Page 2 2004-04-07 SPP07N65C3, SPI07N65C3 SPA07N65C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol Conditions min. Values typ. 6 790 260 16 30 55 6 3.5 60 7 max. 100 15 Unit g fs Ciss Coss Crss V DS≥2*I D*RDS(on)max, ID=4.6A V GS=0V, V DS=25V, f=1MHz - S pF Effective output capacitance,4) Co(er) energy related Effective output capacitance,5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V GS=0V, V DS=0V to 480V td(on) tr td(off) tf V DD=380V, V GS=0/13V, ID=7.3A, RG=12Ω, Tj=125°C - ns VDD=480V, ID=7.3A - 3 9.2 21 5.5 27 - nC VDD=480V, ID=7.3A, VGS=0 to 10V V(plateau) VDD=480V, ID=7.3A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 1.0 Page 3 2004-04-07 SPP07N65C3, SPI07N65C3 SPA07N65C3 Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol SPP_I Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.024 0.046 0.085 0.308 0.317 0.112 Tj P tot ( t) C th1 C th2 C th,n T am b Symbol IS ISM VSD trr Qrr Irrm dirr /dt Conditions min. TC=25°C Values typ. 1 400 4 28 800 max. 7.3 21.9 1.2 600 - Unit A VGS=0V, IF=IS VR=480V, IF=IS , diF/dt=100A/µs - V ns µC A A/µs Tj=25°C Value SPA 0.024 0.046 0.085 0.195 0.45 2.511 R th1 Unit K/W Symbol SPP_I Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Value SPA 0.00012 0.0004578 0.000645 0.001867 0.007558 0.412 0.00012 0.0004578 0.000645 0.001867 0.004795 0.045 Unit Ws/K E xternal H eatsink Rev. 1.0 Page 4 2004-04-07 SPP07N65C3, SPI07N65C3 SPA07N65C3 1 Power dissipation Ptot = f (TC) 100 SPP07N65C3 2 Power dissipation FullPAK Ptot = f (TC) 34 W W 80 70 28 24 Ptot 60 50 40 Ptot °C 20 16 12 30 20 10 0 0 8 4 0 0 20 40 60 80 100 120 160 20 40 60 80 100 120 °C 160 TC TC 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC =25°C 10 2 4 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25°C 10 2 A A 10 1 10 1 ID 10 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 1 2 3 10 -2 0 10 10 1 10 2 V VDS 10 3 10 -2 0 10 10 10 10 V VDS Rev. 1.0 Page 5 2004-04-07 SPP07N65C3, SPI07N65C3 SPA07N65C3 5 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 1 6 Transient thermal impedance FullPAK ZthJC = f (t p) parameter: D = tp/t 10 1 K/W K/W 10 0 10 0 ZthJC 10 -1 ZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -1 10 -2 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 tp 7 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 24 8 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 13 A 20V 10V 8V A 7V 11 10 20V 8V 6.5V 6V ID ID 16 6,5V 9 8 7 5.5V 12 6V 6 5 5V 8 5,5V 4 3 4.5V 4V 4 5V 4,5V 2 1 25 0 0 2 4 6 8 0 0 5 10 15 VDS 10 12 14 16 18 20 22 V 25 V VDS Rev. 1.0 Page 6 2004-04-07 SPP07N65C3, SPI07N65C3 SPA07N65C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 10 10 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 4.6 A, VGS = 10 V 3.4 SPP07N65C3 Ω 8 4V 4.5V Ω 2.8 RDS(on) 5.5V RDS(on) 7 6 5 4 3 2 1 0 0 5V 2.4 2 1.6 1.2 0.8 0.4 0 -60 98% typ 6V 6.5V 8V 20V 2 4 6 8 10 12 A 15 ID -20 20 60 100 °C 180 Tj 11 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 24 12 Typ. gate charge VGS = f (Q Gate) parameter: ID = 7.3 A pulsed 16 SPP07N65C3 A V 20 18 25°C 12 VGS ID 16 14 12 10 150°C 10 0,2 VDS max 0,8 VDS max 8 6 8 6 4 2 2 0 0 2 4 6 8 10 12 14 16 4 V 20 VGS 0 0 4 8 12 16 20 24 28 nC 34 Q Gate Rev. 1.0 Page 7 2004-04-07 SPP07N65C3, SPI07N65C3 SPA07N65C3 13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 10 2 SPP07N65C3 14 Typ. switching time t = f (ID), inductive load, T j=125°C par.: V DS=380V, VGS=0/+13V, R G=12Ω 90 A ns td(off) 70 10 1 60 IF t 50 40 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 10 0 0 20 30 tf td(on) tr 1 2 3 4 5 6 VSD A ID 8 15 Typ. switching time t = f (RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=7.3 A 500 16 Typ. drain current slope di/dt = f(R G), inductive load, Tj = 125°C par.: V DS=380V, VGS=0/+13V, ID=7.3A 3000 ns A/µs 400 350 300 250 200 150 100 50 0 0 0 0 1000 td(off) di/dt 2000 t 1500 di/dt(on) td(on) tf tr 500 di/dt(off) 20 40 60 80 100 Ω 130 RG 20 40 60 80 100 Ω 130 RG Rev. 1.0 Page 8 2004-04-07 SPP07N65C3, SPI07N65C3 SPA07N65C3 17 Typ. drain source voltage slope 18 Typ. switching losses E = f (ID), inductive load, Tj=125°C par.: V DS=380V, VGS=0/+13V, R G=12Ω 0.025 *) E on includes SDP06S60 diode commutation losses. dv/dt = f(RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, ID=7.3A 100 V/ns 80 70 60 50 40 30 20 10 0 0 dv/dt(off) dv/dt(on) mWs dv/dt E 0.015 0.01 Eoff 0.005 Eon* 20 40 60 80 Ω RG 120 0 0 1 2 3 4 5 6 A ID 8 19 Typ. switching losses E = f(RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V,ID=11A 0.2 20 Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 8 mWs 0.16 *) Eon includes SDP06S60 diode commutation losses. A Tj(START)=25°C 6 0.14 IAR E 0.12 0.1 Eoff 5 Tj(START)=125°C 4 0.08 0.06 0.04 0.02 0 0 3 Eon* 2 1 20 40 60 80 100 Ω 130 RG 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 µs 10 t AR 4 Rev. 1.0 Page 9 2004-04-07 SPP07N65C3, SPI07N65C3 SPA07N65C3 21 Avalanche energy EAS = f (Tj) par.: ID = 1.5 A, V DD = 50 V 260 785 SPP07N65C3 22 Drain-source breakdown voltage V(BR)DSS = f (Tj) mJ 220 V 745 V(BR)DSS °C 200 EAS 180 160 140 120 100 80 60 40 20 0 20 40 60 80 100 120 160 725 705 685 665 645 625 605 585 -60 -20 20 60 100 °C 180 Tj Tj 23 Avalanche power losses PAR = f (f ) parameter: E AR=0.5mJ 500 24 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 pF W 10 3 Ciss PAR 300 C 10 2 200 Coss 10 1 100 Crss 04 10 10 5 MHz f 10 6 10 0 0 100 200 300 400 V 600 VDS Rev. 1.0 Page 10 2004-04-07 SPP07N65C3, SPI07N65C3 SPA07N65C3 25 Typ. Coss stored energy Eoss=f(VDS) 5.5 µJ 4.5 4 Eoss 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Rev. 1.0 Page 11 2004-04-07 SPP07N65C3, SPI07N65C3 SPA07N65C3 P-TO-220-3-1 B 10 ±0.4 3.7 ±0.2 A 1.27±0.13 4.44 15.38 ±0.6 2.8 ±0.2 C 5.23 ±0.9 13.5 ±0.5 3x 0.75 ±0.1 1.17 ±0.22 2x 2.54 0.25 M 0.5 ±0.1 2.51±0.2 ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 Rev. 1.0 9.98 ±0.48 0.05 Page 12 2004-04-07 SPP07N65C3, SPI07N65C3 SPA07N65C3 P-TO-262-3-1 (I2-PAK) 10 ±0.2 0...0.3 8.5 1) 1) A B 4.4 1.27 1 ±0.3 11.6 ±0.3 2.4 C 4.55 ±0.2 13.5 ±0.5 0...0.15 1.05 3 x 0.75 ±0.1 2 x 2.54 1) 0.5 ±0.1 2.4 0.25 M ABC Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01) Rev. 1.0 9.25 ±0.2 7.55 0.05 Page 13 2004-04-07 SPP07N65C3, SPI07N65C3 SPA07N65C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 Page 14 2004-04-07