SPP04N60S5

SPP04N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 VDS RDS(on) ID 600 0.95 4.5 PG-TO220 2 V Ω A 1 23 Type Package Ordering Code SPP04N60S5 PG-TO220 Q67040-S4200 Marking 04N60S5 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 4.5 2.8 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 3.4 A, VDD = 50 V I D puls EAS 9 130 0.4 4.5 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 4.5 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C VGS Ptot T j , T stg 50 -55... +150 Operating and storage temperature Rev. 2.6 Page 1 2007-08-30 SPP04N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 4.5 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=200µΑ, VGS=V DS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C Symbol min. RthJC RthJA Values typ. 35 max. 2.5 62 62 260 - Unit K/W RthJA Tsold - °C Values typ. 700 4.5 0.5 0.85 2.3 20 max. 5.5 600 3.5 - Unit V V(BR)DS VGS=0V, ID=4.5A µA 1 50 100 0.95 nA Ω Gate-source leakage current IGSS VGS=20V, VDS=0V VGS=10V, ID=2.8A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Rev. 2.6 Page 2 2007-08-30 SPP04N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol Conditions min. Values typ. 2.5 580 220 7 20 35 55 30 60 15 max. 90 22.5 Unit g fs Ciss Coss Crss V DS≥2*I D*RDS(on)max, ID=2.8A - S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance, 4) Co(er) energy related Effective output capacitance, 5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V GS=0V, V DS=0V to 480V pF t d(on) tr t d(off) tf V DD=350V, V GS=0/10V, ID=4.5A, RG=18Ω - ns V DD=350V, V GS=0/10V, ID=4.5A, RG=18 V DD=350V, V GS=0/10V, ID=4.5A, RG=18Ω VDD=350V, ID=4.5A - 4.5 11 17.6 8 22.9 - nC VDD=350V, ID=4.5A, VGS=0 to 10V V(plateau) VDD=350V, ID=4.5A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 2.6 Page 3 2007-08-30 SPP04N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=350V, IF =IS , diF/dt=100A/µs Symbol IS ISM Conditions min. TC=25°C Values typ. 1 900 3.2 max. 4.5 9 1.2 1530 - Unit A V ns µC Typical Transient Thermal Characteristics Symbol Value typ. Unit Symbol Value typ. Unit Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.039 0.074 0.132 0.555 0.529 0.169 K/W Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00007347 0.0002831 0.0004062 0.001215 0.00276 0.029 Ws/K Tj R th1 R th,n T case E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.6 Page 4 2007-08-30 SPP04N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) 55 SPP04N60S5 ID = f ( V DS ) parameter : D = 0 , T C=25°C 10 1 W A 45 40 Ptot 10 0 30 25 20 15 10 5 0 0 20 40 60 80 100 120 10 -1 ID 35 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC °C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) parameter: D = tp/T 10 1 ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 14 K/W A 10 0 20V 12V 10V 9.5V ZthJC 10 ID 8 10 -1 9V 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 6 8.5V 8V 4 7.5V 7V 6.5V 2 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 0 0 5 10 15 V VDS 25 tp Rev. 2.6 Page 5 2007-08-30 SPP04N60S5 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 8 RDS(on)=f(ID) parameter: Tj=150°C, V GS 5 A 20V 12V 10V 9.5V mΩ 9V 8.5V RDS(on) 4 ID 8V 3.5 4 7.5V 3 2.5 7V 2 6.5V 6V 2 1.5 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 1 2 3 4 5 6 7 0 0 5 10 15 V VDS 25 1 0 A ID 8.5 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) parameter : ID = 2.8 A, VGS = 10 V 5.5 SPP04N60S5 ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 16 Ω 4.5 A RDS(on) 4 12 ID 98% typ °C 3.5 3 10 8 2.5 2 1.5 1 0.5 0 -60 -20 20 60 100 180 6 4 2 0 0 2 4 6 8 10 12 14 16 Tj V 20 VGS Rev. 2.6 Page 6 2007-08-30 SPP04N60S5 9 Typ. gate charge VGS = f (QGate) parameter: ID = 4.5 A pulsed 16 V 0.2 VDS max SPP04N60S5 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 10 1 SPP04N60S5 A 12 0.8 VDS max VGS 10 0 8 6 IF 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 4 8 12 16 20 nC 10 4 2 10 -2 0 0 0 26 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) par.: Tj ≤ 150 °C 5 EAS = f (Tj) par.: ID = 3.4 A, V DD = 50 V 160 A 4 3.5 mJ Tj(START) =25°C 120 EAS Tj(START) =125°C -2 -1 0 1 2 4 IAR 3 2.5 2 1.5 100 80 60 40 1 0.5 0 -3 10 20 10 10 10 10 10 µs 10 tAR 0 20 40 60 80 100 120 °C 160 Tj Rev. 2.6 Page 7 2007-08-30 SPP04N60S5 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPP04N60S5 14 Avalanche power losses PAR = f (f ) parameter: E AR=0.4mJ 200 V W V(BR)DSS 680 660 640 150 PAR 125 100 620 75 600 580 560 540 -60 50 25 -20 20 60 100 °C 180 04 10 10 5 Hz f 10 6 Tj 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 Eoss=f(VDS) 3.5 pF µJ Ciss 10 3 2.5 C Eoss 2 10 2 1.5 Coss 10 1 1 Crss 0.5 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Rev. 2.6 Page 8 2007-08-30 SPP04N60S5 Definition of diodes switching characteristics Rev. 2.6 Page 9 2007-08-30 SPP04N60S5 PG-TO220-3-1, PG-TO220-3-21 Rev. 2.6 Page 10 2007-08-30 SPP04N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.6 Page 11 2007-08-30