SPP07N60S5

SPP07N60S5, SPB07N60S5 SPI07N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 VDS RDS(on) ID P-TO262 P-TO263-3-2 600 0.6 7.3 V Ω A P-TO220-3-1 2 1 23 Type Package Ordering Code SPP07N60S5 SPB07N60S5 SPI07N60S5 Maximum Ratings Parameter P-TO220-3-1 P-TO263-3-2 P-TO262 Q67040-S4172 Q67040-S4185 Q67040-S4328 Marking 07N60S5 07N60S5 07N60S5 Symbol ID Value Unit Continuous drain current TC = 25 °C TC = 100 °C A 7.3 4.6 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = - A, V DD = 50 V I D puls EAS 14.6 230 0.5 7.3 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 7.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C VGS Ptot T j , T stg 83 -55... +150 Operating and storage temperature Rev. 2.1 Page 1 2004-03-30 SPP07N60S5, SPB07N60S5 SPI07N60S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 V, ID = 7.3 A, Tj = 125 °C dv/dt 20 V/ns Thermal Characteristics Parameter Symbol min. RthJC RthJA RthJA Values typ. max. Unit Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s - 35 - 1.5 62 62 260 K/W Tsold - °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Values typ. max. Unit Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=7.3A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=350µΑ, VGS=V DS 600 3.5 - 700 4.5 0.5 0.54 1.46 19 5.5 V V DS=600V, VGS=0V, Tj=25°C, Tj=150°C µA 1 100 100 0.6 nA Ω Gate-source leakage current I GSS V GS=20V, VDS=0V V GS=10V, ID=4.6A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Rev. 2.1 Page 2 2004-03-30 SPP07N60S5, SPB07N60S5 SPI07N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance g fs Ciss Coss Crss V GS=0V, V DS=0V to 480V V DS≥2*I D*RDS(on)max, ID=4.6A Symbol Conditions min. Values typ. max. Unit - 4 970 370 10 30 55 120 40 170 20 255 30 S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance,3) Co(er) energy related Effective output capacitance,4) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time t d(on) tr t d(off) tf pF V DD=350V, V GS=0/10V, ID=7.3A, RG=12Ω - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg VDD=350V, ID=7.3A - 7.5 16.5 27 8 35 - nC VDD=350V, ID=7.3A, VGS=0 to 10V V(plateau) VDD=350V, ID=7.3A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V o(er) DSS. 4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.1 Page 3 2004-03-30 SPP07N60S5, SPB07N60S5 SPI07N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=350V, IF =IS , diF/dt=100A/µs Symbol IS ISM Conditions min. TC=25°C Values typ. 1 750 4.9 max. 7.3 14.6 1.2 1275 - Unit A V ns µC Typical Transient Thermal Characteristics Symbol Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.024 0.046 0.085 0.308 0.317 0.112 K/W Value typ. Unit Symbol Value typ. Unit Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00012 0.0004578 0.000645 0.001867 0.004795 0.045 Ws/K Tj P tot ( t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Rev. 2.1 Page 4 2004-03-30 SPP07N60S5, SPB07N60S5 SPI07N60S5 1 Power dissipation Ptot = f (TC) 100 SPP07N60S5 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25°C 10 2 W 80 70 A 10 1 Ptot 60 50 40 30 20 10 0 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 20 40 60 80 100 120 °C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 25 4 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 12 20V A 12V A 20V 12V 10V 9V ID 15 10V ID 8 8.5V 6 9V 8V 10 4 8V 7.5V 7V 5 7V 2 6.5V 6V 0 0 5 10 15 V VDS 25 0 0 5 10 15 V VDS 25 Rev. 2.1 Page 5 2004-03-30 SPP07N60S5, SPB07N60S5 SPI07N60S5 5 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 3 6 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 4.6 A, VGS = 10 V 3.4 SPP07N60S5 Ω mΩ 2.8 RDS(on) 2 1.5 RDS(on) 2.4 2 1.6 1 0 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 2 4 6 8 10 1.2 0.8 0.4 0 -60 98% typ A ID 14 -20 20 60 100 °C 180 Tj 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 24 8 Typ. gate charge VGS = f (Q Gate) parameter: ID = 7.3 A pulsed 16 V SPP07N60S5 A 20 18 0.2 VDS max 12 0.8 VDS max VGS ID 16 14 12 10 25 °C 150 °C 10 8 6 8 6 4 2 2 0 0 4 8 12 4 V 20 0 0 4 8 12 16 20 24 28 32 nC 38 VGS Q Gate Page 6 Rev. 2.1 2004-03-30 SPP07N60S5, SPB07N60S5 SPI07N60S5 9 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 10 2 SPP07N60S5 10 Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 8 A A 6 IAR 10 1 IF 5 T j(START) =25°C 4 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 3 T j(START) =125°C 2 1 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 VSD 4 µs 10 tAR 11 Avalanche energy EAS = f (Tj) par.: ID = - A, VDD = 50 V 260 12 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPP07N60S5 mJ 220 V EAS 180 160 140 120 100 80 60 40 20 0 20 40 60 80 100 120 V(BR)DSS °C 200 680 660 640 620 600 580 560 540 -60 160 -20 20 60 100 °C 180 Tj Tj Page 7 Rev. 2.1 2004-03-30 SPP07N60S5, SPB07N60S5 SPI07N60S5 13 Avalanche power losses PAR = f (f ) parameter: E AR=0.5mJ 300 14 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 pF W Ciss 10 3 PAR 200 C 150 10 2 Coss 100 10 1 50 Crss 04 10 10 5 MHz f 10 6 10 0 0 100 200 300 400 V 600 VDS 15 Typ. Coss stored energy Eoss=f(VDS) 5.5 16 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS µJ 4.5 4 Eoss 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Rev. 2.1 Page 8 2004-03-30 SPP07N60S5, SPB07N60S5 SPI07N60S5 Definition of diodes switching characteristics Rev. 2.1 Page 9 2004-03-30 SPP07N60S5, SPB07N60S5 SPI07N60S5 P-TO-220-3-1 B 10 ±0.4 3.7 ±0.2 A 1.27±0.13 4.44 15.38 ±0.6 2.8 ±0.2 C 5.23 ±0.9 13.5 ±0.5 3x 0.75 ±0.1 1.17 ±0.22 2x 2.54 0.25 M 0.5 ±0.1 2.51±0.2 ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-2 (D 2-PAK) Rev. 2.1 9.98 ±0.48 0.05 Page 10 2004-03-30 SPP07N60S5, SPB07N60S5 SPI07N60S5 P-TO-262-3-1 (I2-PAK) 10 ±0.2 0...0.3 8.5 1) 1) A B 4.4 1.27 1 ±0.3 11.6 ±0.3 2.4 C 4.55 ±0.2 13.5 ±0.5 0...0.15 1.05 3 x 0.75 ±0.1 2 x 2.54 1) 0.5 ±0.1 2.4 0.25 M ABC Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. Rev. 2.1 9.25 ±0.2 7.55 0.05 Page 11 2004-03-30 SPP07N60S5, SPB07N60S5 SPI07N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 Page 12 2004-03-30