SPP20N60CFD_05

SPP20N60CFD Cool MOS™ P ower Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme d v/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 0.22 20.7 PG-TO220 V Ω A Type SPP20N60CFD Maximum Ratings Parameter Package PG-TO220 Ordering Code Q67040-S4616 Marking 20N60CFD Symbol ID Value 20.7 13.1 52 690 1 20 40 ±20 ±30 208 -55... +150 Unit A Continuous drain current T C = 25 °C T C = 100 °C Pulsed drain current, t p limited by T jmax Avalanche energy, single pulse ID = 10 A, V DD = 50 V ID puls EAS mJ Avalanche energy, repetitive t AR limited by T jmax 1) EAR ID = 20 A, V DD = 50 V Avalanche current, repetitive t AR limited by T jmax Reverse diode d v/dt IS=20.7A, V DS=480V, T j=125°C IAR dv/dt VGS VGS Ptot Tj , Tstg A V/ns V W °C 2005-06-09 Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C Operating and storage temperature Rev. 2.4 Page 1 SPP20N60CFD Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 20.7 A, Tj = 125 °C Symbol dv/dt di F/dt Value 80 900 Unit V/ns A/µs Maximum diode commutation speed V DS = 480 V, ID = 20.7 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Drain-source breakdown voltage Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current V GS(th) IDSS ID=1000µΑ, V GS=VDS V DS=600V, V GS=0V, Tj=25°C, Tj=150°C Symbol min. RthJC RthJA T sold - Values typ. max. 0.6 62 260 Unit K/W °C Symbol Conditions min. 600 3 - Values typ. 700 4 2.1 1700 0.19 0.51 0.54 max. 5 Unit V V (BR)DSS V GS=0V, I D=0.25mA V (BR)DS V GS=0V, I D=20A µA 100 0.22 nA Ω Gate-source leakage current Drain-source on-state resistance IGSS RDS(on) V GS=20V, V DS=0V V GS=10V, I D=13.1A, Tj=25°C Tj=150°C Gate input resistance RG f=1MHz, open Drain Rev. 2.4 Page 2 2005-06-09 SPP20N60CFD Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance,2) energy related Effective output capacitance,3) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V DD=480V, I D=20.7A, V GS=0 to 10V V DD=480V, I D=20.7A Symbol g fs Ciss Coss Crss Co(er) Co(tr) td(on) tr td(off) tf Conditions min. V DS≥2*I D*RDS(on)max, ID=13.1A V GS=0V, VDS=25V, f=1MHz Values typ. 17.5 2400 780 50 83 160 12 15 59 6.4 max. - Unit S pF V GS=0V, V DS=0V to 480V pF V DD=380V, V GS=0/10V, ID=20.7A, RG=3.6Ω - ns - 15 54 95 7 124 - nC V(plateau) V DD=480V, I D=20.7A V 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR 2C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% VDSS. 3C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% VDSS. Rev. 2.4 Page 3 2005-06-09 SPP20N60CFD Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current V SD trr Qrr Irrm di rr/dt V GS=0V, IF=I S V R=480V, IF=IS , diF/dt=100A/µs Symbol IS ISM Conditions min. TC=25°C Values typ. 1 150 1 13 1400 max. 20.7 52 1.2 - Unit A V ns µC A A/µs Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.007686 0.015 0.029 0.114 0.136 0.059 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0003764 0.001412 0.001932 0.005299 0.012 0.091 Ws/K Unit Symbol Value typ. Unit Tj P tot (t) R th1 R th,n T case External Heatsink C th1 C th2 C th,n T amb Rev. 2.4 Page 4 2005-06-09 SPP20N60CFD 1 Power dissipation Ptot = f (TC) SPP20N60CFD 2 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 2 240 W 200 180 A 10 1 P tot 140 120 100 80 60 40 20 0 10 0 20 40 60 80 100 120 -2 ID 10 0 160 10 -1 tp=0.001 ms tp=0.01 ms tp=0.1 ms tp=1 ms DC °C 160 10 0 10 1 10 2 TC V 10 VDS 3 3 Transient thermal impedance ZthJC = f (tp) parameter: D = t p/T 10 0 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS Vgs = 10V Vgs = 8V A Vgs = 7.5V Vgs = 7V Vgs = 6.5V Vgs = 6V 50 Vgs = 5.5V Vgs = 5V 40 70 K/W 10 -1 ZthJC 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse ID 10 -4 -7 -6 -5 -4 -3 -2 30 20 10 10 10 10 10 10 10 s 10 tp 0 0 0 4 8 12 16 20 V 28 VDS Rev. 2.4 Page 5 2005-06-09 SPP20N60CFD 5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS Vgs = 20V Vgs = 7.5V A Vgs = 7V Vgs = 6.5V Vgs = 6V 30 Vgs = 5.5V Vgs = 5V Vgs = 4.5V 25 40 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 1.5 R DS(on) Ω ID Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 6.5V Vgs = 7V Vgs = 7.5V Vgs = 20V 20 0.9 15 10 0.6 5 0 0 4 8 12 16 20 V 28 0.3 0 5 10 15 20 25 30 V DS A 40 ID 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 13.1 A, VGS = 10 V 1.3 SPP20N60CFD 8 Typ. transfer characteristics ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 70 Ω A 1.1 Tj = 25°C R DS(on) 1 0.9 50 ID 0.8 0.7 0.6 Tj = 150°C 40 30 0.5 0.4 0.3 0.2 0.1 0 -60 -20 20 60 100 °C 20 98% typ 10 180 0 0 4 8 12 V 20 Tj Rev. 2.4 Page 6 VGS 2005-06-09 SPP20N60CFD 9 Typ. gate charge VGS = f (QGate) parameter: ID = 20.7 A pulsed SPP20N60CFD 10 Forward characteristics of body diode IF = f (V SD) parameter: Tj , tp = 10 µs 10 2 SPP20N60CFD 16 V A 0.2 VDS max 0.8 VDS max 12 V GS 10 1 10 8 6 IF 10 0 T j = 25 °C typ 4 T j = 150 °C typ T j = 25 °C (98%) 2 10 0 20 40 60 80 100 120 nC 150 -1 T j = 150 °C (98%) 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR) par.: T j ≤ 150 °C 20 12 Avalanche energy EAS = f (T j) par.: ID = 10 A, V DD = 50 V 750 mJ A 600 550 E AS Tj(Start)=25°C I AR 500 450 400 350 300 250 10 5 Tj(Start)=125°C 200 150 100 50 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 µs 10 t AR 4 0 20 40 60 80 100 120 °C 160 Tj Page 7 Rev. 2.4 2005-06-09 SPP20N60CFD 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) SPP20N60CFD 14 Avalanche power losses PAR = f (f ) parameter: EAR=1mJ 500 720 V W V (BR)DSS 680 660 640 620 200 600 580 560 540 -60 04 10 P AR 300 100 -20 20 60 100 °C 180 10 5 Hz f 10 6 Tj 15 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 5 16 Typ. Coss stored energy Eoss=f(V DS) 14 pF µJ 10 4 Ciss C E oss V 10 8 10 3 6 10 2 Coss 4 2 Crss 10 1 0 100 200 300 400 600 0 0 100 200 300 400 V 600 V DS VDS Rev. 2.4 Page 8 2005-06-09 SPP20N60CFD 17 Typ. reverse recovery charge Qrr = f(TJ) parameter: ID = 20.7A 1800 18 Typ. reverse recovery charge Qrr = f(ID) parameter: di/dt = 100 A/µs 1700 1800 1700 1600 Tj = 125°C Q rr [nC] 1600 Q rr [nC] 1500 1400 1300 1200 1500 1400 1100 1000 Tj = 25°C 1300 900 800 1200 700 1100 600 500 1000 25 50 75 °C Tj 125 400 2 4 6 8 10 12 14 16 A 20 ID 19 Typ. reverse recovery charge Qrr = f(di/dt) parameter: ID = 20.7 A 3400 3200 3000 Tj = 125°C Q rr [nC] 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 100 200 300 400 500 600 700 Tj = 25°C A/µs 900 di/dt Rev. 2.4 Page 9 2005-06-09 SPP20N60CFD Definition of diodes switching characteristics Rev. 2.4 Page 10 2005-06-09 SPP20N60CFD PG-TO-220-3-1, PG-TO220-3-21 Rev. 2.4 Page 11 2005-06-09 SPP20N60CFD Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 Page 12 2005-06-09