SPS01N60C3

SPS01N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS @ Tjmax RDS(on) ID 650 6 0.8 V Ω A PG-TO251-3-11 Type SPS01N60C3 Package Ordering Code Marking 01N60C3 PG-TO251-3-11 - Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 0.6 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 0.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C Symbol ID Value 0.8 0.5 Unit A I D puls EAS 1.6 20 0.01 0.8 ±20 ±30 11 -55... +150 15 W °C V/ns A V mJ VGS Ptot T j , T stg dv/dt Operating and storage temperature Reverse diode dv/dt 3) Rev. 2.0 Page 1 2005-10-24 SPS01N60C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 0.8 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=0.8A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=250µΑ, VGS=V DS V DS=600V, VGS=0V, Tj=25°C, Tj=150°C Symbol min. RthJC RthJA RthJA Tsold - Values typ. max. 11 75 75 50 260 Unit K/W °C Values typ. 700 3 0.1 5.6 15.1 max. 3.9 600 2.1 - Unit V µA 1 50 100 6 nA Ω Gate-source leakage current I GSS V GS=30V, VDS=0V V GS=10V, ID=0.5A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Rev. 2.0 Page 2 2005-10-24 SPS01N60C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V DD=350V, ID=0.8A, V GS=0 to 10V V DD=350V, ID=0.8A Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Conditions min. V DS≥2*I D*RDS(on)max, ID=0.5A V GS=0V, V DS=25V, f=1MHz Values typ. 0.75 100 40 2.5 30 25 55 30 max. 82 45 - Unit S pF V DD=350V, V GS=0/10V, ID=0.8A, RG=100Ω ns - 0.9 2.2 3.9 5.5 5 - nC V(plateau) V DD=350V, ID=0.8A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3I