SPU02N60S5

SPU02N60S5 SPD02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID PG-TO252 2 3 1 600 3 1.8 PG-TO251 V Ω A 1 2 3 Type Package Ordering Code SPU02N60S5 SPD02N60S5 PG-TO251 PG-TO252 Q67040-S4226 Q67040-S4213 Marking 02N60S5 02N60S5 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 1.8 1.1 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 1.35 A, VDD = 50 V I D puls EAS 3.2 50 0.07 1.8 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 1.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C VGS Ptot T j , T stg 25 -55... +150 Operating and storage temperature Rev. 2.5 Page 1 2008-04-07 SPU02N60S5 SPD02N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 1.8 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, *) 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=80µΑ, VGS=VDS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C Symbol min. RthJC RthJA Values typ. max. 5 75 75 50 260 - Unit K/W RthJA Tsold - °C Values typ. 700 4.5 0.5 2.7 7.3 max. 5.5 600 3.5 - Unit V V(BR)DS VGS=0V, ID=1.8A µA 1 50 100 3 nA Ω Gate-source leakage current IGSS VGS=20V, VDS=0V VGS=10V, ID=1.1A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) *) TO252: reflow soldering, MSL3; TO251: wavesoldering Rev. 2.5 Page 2 2008-04-07 SPU02N60S5 SPD02N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD=350V, ID=1.8A, VGS=0 to 10V VDD=350V, ID=1.8A Symbol Conditions min. Values typ. 1.4 240 77 4.4 35 35 35 20 max. 42 30 Unit g fs Ciss Coss Crss t d(on) tr t d(off) tf V DS≥2*I D*RDS(on)max, ID=1.1A - S pF V GS=0V, V DS=25V, f=1MHz V DD=350V, V GS=0/10V, ID=1.8A, RG=50Ω ns - 2.3 4.5 7.3 8 9.5 - nC V(plateau) VDD=350V, ID=1.8A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.5 Page 3 2008-04-07 SPU02N60S5 SPD02N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=350V, IF =IS , diF/dt=100A/µs Symbol IS ISM Conditions min. TC=25°C Values typ. 1 860 1.6 max. 1.8 3.2 1.2 1460 - Unit A V ns µC Typical Transient Thermal Characteristics Symbol Value typ. Unit Symbol Value typ. Unit Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.1 0.184 0.306 1.207 0.974 0.251 K/W Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00002806 0.0001113 0.0001679 0.000547 0.001388 0.019 Ws/K Tj R th1 R th,n T case E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.5 Page 4 2008-04-07 SPU02N60S5 SPD02N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) 28 SPU02N60S5 ID = f ( V DS ) parameter : D = 0 , T C=25°C 10 1 W 24 22 20 A Ptot 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 10 -1 ID 18 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC °C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Typ. output characteristic 4 Drain-source on-state resistance ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 6 20V RDS(on) = f (Tj) parameter : ID = 1.1 A, VGS = 10 V 17 SPU02N60S5 Ω 14 A 12V RDS(on) 12 10 8 6 4 2 0 -60 98% typ ID 4 10V 3 9V 8.5V 8V 2 1 7.5V 7V 6V 0 0 5 10 15 V VDS 25 -20 20 60 100 °C 180 Tj Page 5 Rev. 2.5 2008-04-07 SPU02N60S5 SPD02N60S5 5 Typ. transfer characteristics 6 Typ. gate charge VGS = f (Q Gate) parameter: ID = 1.8 A pulsed 16 V 0.2 VDS max SPU02N60S5 ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 6 A 12 0.8 VDS max VGS ID 4 10 3 8 6 2 4 1 2 0 0 4 8 12 VGS 20 0 0 1 2 3 4 5 6 7 8 nC 10 V Q Gate 7 Forward characteristics of body diode 8 Avalanche SOA IF = f (VSD) parameter: Tj , tp = 10 µs 10 1 SPU02N60S5 IAR = f (tAR) par.: Tj ≤ 150 °C 2 A A 1.6 10 0 1.4 T j(START)=25°C IF IAR 1.2 1 0.8 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 0.6 0.4 0.2 Tj(START)=125°C 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 VSD µs 10 t AR 4 Rev. 2.5 Page 6 2008-04-07 SPU02N60S5 SPD02N60S5 9 Avalanche energy 10 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPU02N60S5 EAS = f (Tj) par.: ID = 1.35 A, VDD = 50 V 50 V mJ V(BR)DSS °C 680 660 640 620 EAS 30 20 600 580 560 0 20 540 -60 10 40 60 80 100 120 160 -20 20 60 100 °C 180 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 pF 10 3 Ciss C 10 2 Coss 10 1 Crss 10 0 0 10 20 30 40 50 60 70 80 V 100 VDS Rev. 2.5 Page 7 2008-04-07 SPU02N60S5 SPD02N60S5 Definition of diodes switching characteristics Rev. 2.5 Page 8 2008-04-07 SPU02N60S5 SPD02N60S5 PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK) Rev. 2.5 Page 9 2008-04-07 SPU02N60S5 SPD02N60S5 PG-TO251-3-1, PG-TO251-3-21 (I-PAK) Rev. 2.5 Page 10 2008-04-07 SPU02N60S5 SPD02N60S5 Rev. 2.5 Page 11 2008-04-07