NJ72

Databook.fxp 1/13/99 2:09 PM Page F-26 F-26 01/99 NJ72 Process Silicon Junction Field-Effect Transistor ¥ VHF/UHF Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.020" X 0.020" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ72 Process. Datasheet IFN5564, IFN5565 IFN5566 J308, J309 J308, J309 J310 Datasheet U308, U309 U430, U431 VCR2N At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Drain Source ON Resistance Input Capacitance Feedback Capacitance gfs rds(on) Ciss Crss 22 40 6.5 2.5 mS Ω pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 –1 Min – 25 Typ – 40 – 10 – 100 90 – 5.5 Max Unit V pA mA V NJ72 Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV ID = 1 mA, VGS = ØV VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-27 01/99 F-27 NJ72 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.3 V Gfs as a Function of VGS(OFF) 25 Transconductance in mS 25 VGS = Ø V Drain Current in mA 20 VGS = – 0.5 V 15 VGS = –1.0 V 10 VGS = –1.5 V 5 VGS = –2.0 V 0 5 10 15 20 20 15 10 5 0 –1 –2 –3 –4 –5 –6 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Drain Source (on) Resistance in Ω Drain Saturation Current in mA 100 80 60 40 20 80 70 60 50 40 30 20 10 0 –1 Rds as a Function of VGS(OFF) 0 –1 –2 –3 –4 –5 –6 –2 –3 –4 –5 –6 Drain Source Cutoff Voltage in Volts Drain Source Cutoff Voltage in Volts Input Capacitance as a Function of VGS 15 13 VDS = Ø V 11 9 7 5 0 –4 –8 – 12 – 16 Gate Source Voltage in Volts VDS = 5 V VDS = 10 V Feedback Capacitance in pF Input Capacitance in pF 7 6 5 4 Feedback Capacitance as a Function of VGS VDS = Ø V VDS = 5 V VDS = 10 V 3 2 0 –4 –8 – 12 – 16 Gate Source Voltage in Volts