5962F0151001VXC

® IS-139ASRH Data Sheet June 18, 2008 FN9000.3 Single Event Radiation Hardened Quad Voltage Comparator The single event effects and total dose radiation hardened IS-139ASRH consists of four independent single or dual supply voltage comparators on a single monolithic substrate. The common mode input voltage range includes ground, even when operated from a single supply, and the low supply current makes these comparators suitable for low power applications. These types were designed to directly interface with TTL and CMOS inputs. TM Features • Electrically Screened to SMD # 5962-01510 • QML Qualified per MIL-PRF-38535 Requirements • Radiation Hardness - Total Dose. . . . . . . . . . . . . . . . . . . . . 300krad(Si) (Max) - Single Event Latch-up . . . . . . . . . . . . >84MeV/mg/cm2 - Single Event Upset . . . . . . . . . . . . . . . >84MeV/mg/cm2 • Operating Supply Voltage Range . . . . . . . . . . . . 9V to 30V • Input Offset Voltage (VIO). . . . . . . . . . . . . . . . . 5mV (Max) • Quiescent Supply Current . . . . . . . . . . . . . . . . 3mA (Max) • Differential Input Voltage Range Equal to the Supply Voltage The IS-139ASRH is fabricated on our dielectrically isolated Rad Hard Silicon Gate (RSG) process, which provides immunity to single event latch-up and the capability of highly reliable performance in any radiation environment. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the IS-139ASRH are contained in SMD 5962-01510. A “hot-link” is provided on the Intersil website for downloading. Applications • DC-DC Power Conversion • Pulse Generators • Timing Circuitry • Level Shifting • Analog to Digital Conversion Pinout IS9-139ASRH (FLATPACK CDFP4-F20) TOP VIEW NC OUTB NC OUTA NC NC VCC -INA +INA -INB 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 OUTC OUTD NC GND NC +IND -IND +INC -INC +INB Ordering Information ORDERING NUMBER 5962F0151001VXC 5962F0151001QXC IS9-139ASRH/PROTO INTERNAL MKT. NUMBER IS9-139ASRH-Q IS9-139ASRH-8 IS9-139ASRH/PROTO TEMP. RANGE (°C) -55 to +125 -55 to +125 -55 to +125 PACKAGE DRAWING NUMBER K20.A K20.A K20.A 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002, 2008. All Rights Reserved. Star*Power™ is a trademark of Intersil Americas Inc. All other trademarks mentioned are the property of their respective owners. Die Characteristics DIE DIMENSIONS 3750µm x 4510µm (148 mils x 178 mils) 483µm ± 25.4µm (19 mils ± 1 mil) INTERFACE MATERIALS Glassivation Type: Silox (SiO2) Thickness: 8.0kÅ ± 1.0kÅ Top Metallization Type: AlSiCu Thickness: 16.0kÅ ± 2kÅ Substrate Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish Silicon ASSEMBLY RELATED INFORMATION Substrate Potential Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density