CD40257BMS

CD40257BMS December 1992 CMOS Quad 2 Line to 1 Line Data Selector/Multiplexer Pinout CD40257BMS TOP VIEW Features • High Voltage Type (20V Rating) • 3-State Outputs • 100% Tested for Quiescent Current at 20V INPUT SELECT 1 16 VDD 15 OUTPUT DISABLE 14 A4 13 B4 12 D4 11 A3 10 B3 9 D3 • 5V, 10V and 15V Parametric Ratings • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC • Noise Margin (Over Full Package/Temperature Range) - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V • Standardized Symmetrical Output Characteristics • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” A1 2 B1 3 D1 4 A2 5 B2 6 D2 7 VSS 8 Applications • Digital Multiplexing • Shift Right/Shift Left Registers • True/Complement Selection Functional Diagram OUTPUT DISABLE 15 A1 B1 2 3 5 6 11 A3 B3 A4 B4 10 14 13 1 INPUT SELECT VDD = 16 VSS = 8 12 D4 9 D3 7 D2 4 D1 Description CD40257BMS is a data selector/multiplexer featuring three state outputs which can interface directly with and drive data lines of bus oriented systems. The CD40257BMS is supplied in these 16-lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4T H1E H3X A2 B2 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 File Number 3364 7-1442 Specifications CD40257BMS Absolute Maximum Ratings DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . ±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Reliability Information Thermal Resistance θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) Tri-State Output Leakage VIL VIH VIL VIH IOZL VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VIN = VDD or GND VOUT = 0V VDD = 20V VDD = 18V Tri-State Output Leakage IOZH VIN = VDD or GND VOUT = VDD VDD = 20V VDD = 18V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. GROUP A SUBGROUPS 1 2 3 1 2 3 1 2 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1 2 3 1 2 3 o LIMITS TEMPERATURE +25oC +125oC -55oC +25oC +125 oC MIN -100 -1000 -100 o MAX 2 200 2 100 1000 100 50 -0.53 -1.8 -1.4 -3.5 -0.7 2.8 UNITS µA µA µA nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V -55oC +25oC +125oC -55oC +25 C, +125 C, -55 C +25oC +25oC +25oC +25oC +25 C +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC -55oC +25 oC o o 0.53 1.4 3.5 -2.8 0.7 +25oC, +125oC, -55oC 14.95 VOH > VOL < VDD/2 VDD/2 3.5 11 -0.4 -12 -0.4 - 1.5 4 0.4 12 0.4 V V V V µA µA µA µA µA µA +125oC -55oC 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. 7-1443 Specifications CD40257BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 9 10, 11 9 10, 11 9 10, 11 +25oC +125oC, -55oC LIMITS MIN MAX 300 405 380 513 190 257 200 270 UNITS ns ns ns ns ns ns ns ns PARAMETER Propagation Delay Data Input Output Propagation Delay Select to Output SYMBOL TPHL1 TPLH1 TPHL TPLH2 CONDITIONS VDD = 5V, VIN = VDD or GND (Notes 1, 2) VDD = 5V, VIN = VDD or GND (Notes 1, 2) +25oC +125oC, -55oC Propagation Delay TPZH, HZ VDD = 5V, VIN = VDD or GND Output Disable to Output TPZL, LZ (Notes 2, 3) Transition Time TTHL TTLH VDD = 5V, VIN = VDD or GND (Notes 1, 2) +25oC +125oC, -55oC +25oC +125oC, -55oC NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. 3. CL = 50pF, RL = 1K, Input TR, TF < 20ns. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC MIN 4.95 9.95 0.36 0.64 0.9 1.6 2.4 4.2 MAX 1 30 2 60 2 120 50 50 -0.36 -0.64 -1.15 -2.0 -0.9 -1.6 -2.4 -4.2 UNITS µA µA µA µA µA µA mV mV V V mA mA mA mA mA mA mA mA mA mA mA mA mA mA +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VOL VOH VOH IOL5 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC -55oC Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC -55oC Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC -55oC Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC -55oC Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC -55oC Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC -55oC 7-1444 Specifications CD40257BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS(Continued) LIMITS PARAMETER Input Voltage Low Input Voltage High Propagation Delay Data Input to Output Propagation Delay Select to Output SYMBOL VIL VIH TPHL1 TPLH1 TPHL2 TPLH2 CONDITIONS VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V VDD = 15V VDD = 10V VDD = 15V NOTES 1, 2 1, 2 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 4 1, 2, 4 1, 2, 3 1, 2, 3 1, 2 TEMPERATURE +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25 C +25oC +25 C +25 C +25 C +25oC +25oC +25 C o o o o o MIN +7 - MAX 3 140 100 170 130 100 80 100 80 7.5 UNITS V V ns ns ns ns ns ns ns ns pF Propagation Delay TPZH, HZ VDD = 10V Output Disable to Output TPZL, LZ VDD = 15V Transition Time TTHL TTLH CIN VDD = 10V VDD = 15V Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. CL = 50pF, RL = 1K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH ∆VTN VTP ∆VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10µA VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 7.5 -0.2 ±1 2.8 ±1 VOL < VDD/2 1.35 x +25oC Limit UNITS µA V V V V V ns NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER Supply Current - MSI-1 Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A ± 0.2µA ± 20% x Pre-Test Reading ± 20% x Pre-Test Reading DELTA LIMIT 7-1445 Specifications CD40257BMS TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 Subgroups 1, 2, 3, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4 CONFORMANCE GROUPS Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 (Note 1) Static Burn-In 2 (Note 1) Dynamic BurnIn (Note 1) Irradiation (Note 2) NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V OPEN 4, 7, 9, 12 4, 7, 9, 12 4, 7, 9, 12 GROUND 1-3, 5, 6, 8, 10, 11, 13-15 8, 15 8, 15 8 VDD 16 1-3, 5, 6, 10, 11, 13, 14, 16 16 1-3, 5, 6, 10, 11, 13-16 4, 7, 9, 12 2, 3, 5, 6, 10, 11, 13, 14 1 9V ± -0.5V 50kHz 25kHz 7-1446 Specifications CD40257BMS Logic Diagram TRUTH TABLE OUTPUT DISABLE 15* INPUT SELECT 1* VDD A1 2* INPUTS 3-STATE OUTPUT DISABLE 1 0 0 D1 4 OUTPUT SELECT X 0 0 1 1 A X 0 1 X X B X X X 0 1 D Z 0 1 0 1 Logic 0 = Low 0 0 B1 3* X = Don’t care Logic 1 = High Z = High impedance VSS A2 5* B2 6* A3 11* B3 10* A4 14* B4 13* 3 ADDITIONAL IDENTICAL CIRCUITS D2 7 VDD D3 9 VSS D4 12 * ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK FIGURE 1. Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) 30 25 20 15 10 5 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 7.5 5.0 2.5 10V 10V 5V 0 5 10 15 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS 7-1447 CD40257BMS Typical Performance Characteristics (Continued) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V 0 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5 0 0 -5 -10 -15 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) -10V -20 -25 -10V -10 -15V -30 -15V -15 FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS PROPAGATION DELAY TIME (tPHL, tPLH) (ns) 400 AMBIENT TEMPERATURE (TA) = +25oC FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC TRANSITION TIME (tTHL, tTLH) (ns) 300 200 SUPPLY VOLTAGE (VDD) = 5V 200 SUPPLY VOLTAGE (VDD) = 5V 150 100 10V 50 15V 100 10V 15V 0 0 20 60 80 40 LOAD CAPACITANCE (CL) (pF) 100 0 0 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FIGURE 6. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE (DATA INPUT TO OUTPUT) 105 POWER DISSIPATION PER (PD) (µW) 8 6 4 2 FIGURE 7. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 15V 104 8 6 4 2 5V 103 8 6 4 2 10V 102 8 6 4 2 LOAD CAPACITANCE CL = 50pF CL = 15pF 2 4 68 10 1 10 102 103 104 INPUT FREQUENCY (fIN) (kHz) 2 4 68 2 4 68 2 4 68 2 4 68 105 FIGURE 8. TYPICAL DYNAMIC POWER DISSIPATION AS A FUNCTION OF INPUT FREQUENCY (ONE INPUT TO ONE OUTPUT) 7-1448 CD40257BMS Chip Dimensions and Pad Layout Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 1449