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ISL6610CBZ-INT

ISL6610CBZ-INT

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    SOIC14

  • 描述:

    BUFFER/INVERTER BASED MOSFET DRI

  • 数据手册
  • 价格&库存
ISL6610CBZ-INT 数据手册
ISL6610, ISL6610A ® Data Sheet Dual Synchronous Rectified MOSFET Drivers The ISL6610, ISL6610A integrates two ISL6609, ISL6609A drivers with enable function removed and is optimized to drive two independent power channels in a synchronousrectified buck converter topology. These drivers, combined with an Intersil ISL63xx or ISL65xx multiphase PWM controller, form a complete high efficiency voltage regulator at high switching frequency. The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6610, ISL6610A features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The ISL6610, ISL6610A also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the schottky diode that may be utilized in a power system to protect the load from negative output voltage damage. In addition, the ISL6610As bootstrap function is designed to prevent the BOOT capacitor from overcharging, should excessively large negative swings occur at the transitions of the PHASE node. November 22, 2006 FN6395.0 Features • 5V Quad N-Channel MOSFET Drives for Two Synchronous Rectified Bridges • Pin-to-pin Compatible with ISL6614 (12V Drive) • Adaptive Shoot-Through Protection • 0.4Ω On-Resistance and 4A Sink Current Capability • Supports High Switching Frequency - Fast Output Rise and Fall - Low Tri-State Hold-Off Time • BOOT Capacitor Overcharge Prevention (ISL6610A) • Low VF Internal Bootstrap Diode • Power-On Reset • QFN Package - Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat No Leads-Product Outline - Near Chip-Scale Package Footprint; Improves PCB Utilization, Thinner Profile • Pb-Free Plus Anneal Available (RoHS Compliant) Related Literature • Technical Brief TB389 “PCB Land Pattern Design and Surface Mount Guidelines for QFN (MLFP) Packages” • Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)” Ordering Information PART NUMBER (Note) TEMP. RANGE (°C) PART MARKING PACKAGE (Pb-Free) PKG. DWG. # ISL6610CBZ 6610CBZ 0 to +70 14 Ld SOIC ISL6610CRZ 66 10CRZ 0 to +70 16 Ld 4x4 QFN L16.4x4 ISL6610IBZ 6610IBZ -40 to +85 14 Ld SOIC Applications ISL6610IRZ 66 10IRZ -40 to +85 16 Ld 4x4 QFN L16.4x4 • Core Voltage Supplies for Intel® and AMD® Microprocessors ISL6610ACBZ 6610ACBZ 0 to +70 14 Ld SOIC ISL6610ACRZ 66 10ACRZ 0 to +70 16 Ld 4x4 QFN L16.4x4 • High Frequency Low Profile High Efficiency DC/DC Converters ISL6610AIBZ 6610AIBZ -40 to +85 14 Ld SOIC ISL6610AIRZ 66 10AIRZ -40 to +85 16 Ld 4x4 QFN L16.4x4 • High Current Low Voltage DC/DC Converters • Synchronous Rectification for Isolated Power Supplies 1 M14.15 M14.15 M14.15 M14.15 Add “-T” suffix for tape and reel. NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2006. All Rights Reserved AMD® is a registered trademark of Advanced Micro Devices, Inc. All other trademarks mentioned are the property of their respective owners. ISL6610, ISL6610A Pinouts GND 3 12 UGATE1 LGATE1 4 11 BOOT1 PVCC 5 10 BOOT2 PGND 6 9 UGATE2 LGATE2 7 8 PHASE2 PHASE1 13 PHASE1 16 15 14 13 GND 1 12 UGATE1 LGATE1 2 11 BOOT1 17 GND PVCC 3 10 BOOT2 PGND 4 9 NC1 5 6 7 8 NC2 2 VCC PWM2 PHASE2 14 VCC PWM1 1 LGATE2 PWM1 PWM2 ISL6610, ISL6610A (16 LD QFN) TOP VIEW ISL6610, ISL6610A (14 LD SOIC) TOP VIEW UGATE2 Block Diagram ISL6610, ISL6610A RBOOT PVCC VCC BOOT1 UGATE1 4.9K SHOOTTHROUGH PROTECTION PHASE1 CHANNEL 1 PVCC PWM1 LGATE1 4.6K PGND CONTROL LOGIC VCC PVCC 4.9K PGND RBOOT BOOT2 UGATE2 PWM2 SHOOTTHROUGH PROTECTION 4.6K GND PHASE2 CHANNEL 2 PVCC LGATE2 PGND PAD FOR ISL6610CR/10ACR, THE PAD ON THE BOTTOM SIDE OF THE QFN PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND. INTEGRATED 3Ω RESISTOR (RBOOT) AVAILABLE ONLY IN ISL6610A 2 FN6395.0 November 22, 2006 ISL6610, ISL6610A Typical Application - Multiphase Converter Using ISL6610 Gate Drivers BOOT1 +5V +12V UGATE1 VCC PHASE1 LGATE1 +5V DUAL DRIVER ISL6610 VCC VSEN +5V BOOT2 COMP FB PVCC +12V UGATE2 ISEN1 PGOOD PWM1 EN PWM2 VID MAIN ISEN2 CONTROL ISL65xx PWM1 PHASE2 NC2 PWM2 LGATE2 NC1 GND PGND +VCORE ISEN3 FS/DIS PWM3 PWM4 GND BOOT1 +5V +12V ISEN4 UGATE1 VCC PHASE1 LGATE1 DUAL DRIVER ISL6610 PVCC +5V BOOT2 +12V UGATE2 PWM1 PHASE2 PWM2 LGATE2 GND 3 PGND FN6395.0 November 22, 2006 ISL6610, ISL6610A Absolute Maximum Ratings Thermal Information Supply Voltage (PVCC, VCC) . . . . . . . . . . . . . . . . . . . . -0.3V to 7V Input Voltage (VEN, VPWM) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V BOOT Voltage (VBOOT-GND). . . -0.3V to 25V (DC) or 36V (
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