CRSM034N06L2

CRSM034N06L2 SkyMOS2 N-MOSFET 60V, 2.8mΩ, 80A Features Product Summary • Uses CRM(CQ) advanced SkyMOS2 technology VDS 60V • Extremely low on-resistance RDS(on) RDS(on)@10V typ 2.8mΩ • Excellent QgxRDS(on) product(FOM) RDS(on)@4.5V typ 3.6mΩ • Qualified according to JEDEC criteria ID 80A Applications • Synchronous Rectification for AC/DC Quick Charger • Battery management 100% Avalanche Tested • UPS (Uninterrupible Power Supplies) CRSM034N06L2 Package Marking and Ordering Information Part # Marking Package Packing CRSM034N06L2 SM034N06L2 DFN5X6 Tape&Reel Reel Size Tape Width Qty N/A N/A 5000pcs Symbol Value Unit VDS 60 V Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Package limit) TC = 25°C (Silicon limit) ID TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) 80 117 A 74 ID pulse 320 A Avalanche energy, single pulse (L=0.3mH, Rg=25Ω) EAS 135 mJ Gate-Source voltage VGS ±20 V Power dissipation (TC = 25°C ) Ptot 79.1 W Tj , T stg -55...+150 °C Operating junction and storage temperature ©China Resources Microelectronics (Chongqing) Limited Page 1 CRSM034N06L2 SkyMOS2 N-MOSFET 60V, 2.8mΩ, 80A Thermal Resistance Parameter Symbol Max Thermal resistance, junction – lead. RthJL 1.58 Thermal resistance, junction – ambient RthJA 47.0 Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition Static Characteristic Drain-source breakdown voltage BVDSS 60 66 - V VGS=0V, ID=250uA Gate threshold voltage VGS(th ) 1.2 1.7 2.2 V VDS=VGS,ID=250uA VDS=60V,VGS=0V Zero gate voltage drain current IDSS - 0.02 1 - - 10 - 10 100 - 2.8 3.4 - 3.6 4.4 gfs - 102 - Input Capacitance Ciss - 3224 - Output Capacitance Coss - 1050 - Reverse Transfer Capacitance Crss - 34 - Gate Total Charge QG - 54.2 - Gate-Source charge Qgs - 10.2 - Gate-Drain charge Qgd - 7.8 - Turn-on delay time td(on) - 11.6 - tr - 46.5 - td(off) - 47 - tf - 58 - RG - 2.2 - Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Transconductance µA Tj=25°C Tj=125°C nA mΩ VGS=±20V,VDS=0V VGS=10V, ID=20A VGS=4.5V, ID=20A S VDS=5V,ID=20A pF VGS=0V, VDS=30V, f=1MHz nC VGS=10V, VDS=30V, ID=20A, f=1MHz ns VGS=10V, VDD=30V, RG_ext=2.7Ω Ω VGS=0V, VDS=0V, f=1MHz Dynamic Characteristic Rise time Turn-off delay time Fall time Gate resistance ©China Resources Microelectronics (Chongqing) Limited Page 2 CRSM034N06L2 SkyMOS2 N-MOSFET 60V, 2.8mΩ, 80A Body Diode Characteristic Parameter Symbol Value min. typ. max. Unit Test Condition VGS=0V,ISD=20A Body Diode Forward Voltage VSD - 0.78 1.2 V Body Diode Reverse Recovery Time trr - 34 - ns Body Diode Reverse Recovery Charge Qrr - 100 - nC ©China Resources Microelectronics (Chongqing) Limited IF=20A, dI/dt=400A/µ s Page 3 CRSM034N06L2 SkyMOS2 N-MOSFET 60V, 2.8mΩ, 80A Typical Performance Characteristics Fig 2: Transfer Characteristics 10V 4.5V 3.5V ID (A) ID (A) Fig 1: Output Characteristics 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 3V VGS=2.5V 0 1 2 3 4 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 VDS=5V 125°C 25°C 5 0 1 2 VDS (V) 3 4 5 VGS (V) Fig 3: Rds(on) vs Drain Current and Gate Voltage Fig 4: Rds(on) vs Gate Voltage 5.0 ID=20A 12 VGS=4.5V RDS(on) (mΩ) RDS(on) (mΩ) 14 3.0 10 8 VGS=10V 6 125°C 4 25°C 1.0 2 5 10 15 20 25 30 0 1 2 3 4 5 6 Fig 5: Rds(on) vs. Temperature 8 9 10 Fig 6: Capacitance Characteristics 1.8 10000 1.7 Ciss 1.5 C - Capacitance (PF) 1.6 RDS(on)_Normalized 7 VGS (V) ID (A) VGS=10V ID=20A 1.4 1.3 1.2 VGS=4.5V ID=20A 1.1 1000 Coss 100 1.0 Crss VGS=0V f=1MHz 0.9 10 0.8 25 50 75 100 Tj - Junction Temperature (°C) 125 150 0 10 20 30 VDS (V) ©China Resources Microelectronics (Chongqing) Limited Page 4 CRSM034N06L2 SkyMOS2 N-MOSFET 60V, 2.8mΩ, 80A Fig 8: Body-diode Forward Characteristics Fig 7: Gate Charge Characteristics 10 IS - Diode Current(A) 8 VGS (V) 100 VDS=30V ID=20A 6 4 10 125˚C 25˚C 1 2 0.1 0 0 10 20 30 40 0.2 50 0.6 0.8 1 1.2 1.4 VSD - Diode Forward Voltage(V) Qg (nC) Fig 10: Drain Current Derating Fig 9: Power Dissipation 90 80 80 70 70 60 60 ID (A) 90 50 50 40 40 30 30 20 20 10 10 0 VGS≥10V 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) TC - Case Temperature (°C) Fig 11: Safe Operating Area 1000 1us 100 Limited by Rds(on) 10us 100us ID (A) Ptot (W) 0.4 10 1ms 10ms DC 1 Single pulse Tc=25˚C 0.1 0.1 1 10 100 VDS (V) ©China Resources Microelectronics (Chongqing) Limited Page 5 CRSM034N06L2 SkyMOS2 N-MOSFET 60V, 2.8mΩ, 80A Fig 12: Max. Transient Thermal Impedance 10 D=0.5 ,0.2 ,0.1, 0.05, 0.02, 0.01, Single pulse ZthJC (˚C/W) 1 0.1 Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 tp (sec) ©China Resources Microelectronics (Chongqing) Limited Page 6 CRSM034N06L2 SkyMOS2 N-MOSFET 60V, 2.8mΩ, 80A Test Circuit & Waveform ©China Resources Microelectronics (Chongqing) Limited Page 7 CRSM034N06L2 SkyMOS2 N-MOSFET 60V, 2.8mΩ, 80A Package Outline: DFN5X6 Symbol Dimensions In Millimeters Min. Max. Dimensions In Inches Min. Max. A 0.80 1.20 0.031 0.047 A1 0.00 0.05 0.000 0.002 b 0.30 0.51 0.012 0.020 c 0.15 0.35 0.006 0.014 D 4.80 5.40 0.189 1.27 BSC e 0.213 0.050 BSC E 5.66 6.06 0.223 0.239 G 0.30 0.71 0.012 0.028 H 5.90 6.35 0.232 0.250 J 3.32 3.92 0.131 0.154 K 3.61 4.25 0.142 0.167 L1 0.05 0.25 0.002 0.010 L2 0.00 0.15 0.000 0.006 12° 0° R θ 0.25 REF 0° 0.010 REF ©China Resources Microelectronics (Chongqing) Limited 12° Page 8 CRSM034N06L2 SkyMOS2 N-MOSFET 60V, 2.8mΩ, 80A Revision History Revison Date Major changes 1.0 2018-5-8 Release of formal version. 1.1 2019-6-3 Revise outline size 2.0 2019-6-25 Supplement package outline info. Disclaimer Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability, such as automotive, aviation/aerospace and life-support devices or systems. Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal injury, death or property damage. Customer are solely responsible for providing adequate safe measures when design their systems. CRM(CQ) reserves the right to improve product design, function and reliability without notice. ©China Resources Microelectronics (Chongqing) Limited Page 9