IPT2008-DEB

IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT2008-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. IPT2008-xxB series is 3 Quadrants triacs, This is specially recommended for use on inductive Loads.. IPT2008-xxB MAIN FEATURES Symbol IT(RMS) VDRM / VRRM VTM Value 20 800 ≤ 1.65 Unit A V V TO-220B ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (360º conduction angle ) Tj = 25℃ Tj = 25℃ Tc = 70℃ t = 8.3ms t = 10ms Symbol Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t Repetitive F = 50Hz Non repetitive dI / dt IGM PG(AV) Value -40 to +150 -40 to +125 800 800 900 900 20 210 200 200 20 100 8 1 Unit ℃ V V A A A²s A/us A W Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing tp = 10ms Critical Rate of rise of on-state current Gate supply : IG = 500mA dIG/dt = 1A/us Peak gate current Average gate power dissipation tp = 20us, Tj = 125 ℃ Tj = 125 ℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPT2008-xxB ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) IPT2006-xxB BE IGT VGT VGD VD = 12V RL = 33Ω Tj = 25 ℃ VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ IG = 1.2 IGT, Tj = 125 ℃ IT = 500mA Gate open VD = 67% VDRM gate open Tj = 125 ℃ (dV/dt) c=0.1V/us Tj = 125 ℃ (dI/dt)c (dV/dt) c=10V/us Tj = 125 ℃ Without snubber Tj = 125 ℃ MIN I – II – III I – II – III I – II – III I – III MAX II IH dV/dt MAX MIN 100 50 400 60 50 250 18 80 75 500 11 A/ms mA V/us MAX MAX MIN 50 50 CE 35 1.5 0.2 50 70 mA DE 50 mA V V Symbol Test Condition Quadrant Unit IL STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Test Conditions ITM = 28A, t p = 380uS VD = VDRM VR = VRRM Tj = 25 ℃ Tj = 25 ℃ Tj = 125 ℃ Value (MAX) 1.65 20 3 Unit V uA mA THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case (AC) Value 1.3 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPT2008-xxB PACKAGE MECHANICAL DATA TO-220B Millimeters Min A B C C2 C3 D E F G H L1 L2 L3 V 1.14 2.65 40º 4.4 0.61 0.46 1.23 2.4 8.6 9.8 6.2 4.8 28 3.75 1.7 2.95 Typ Max 4.6 0.88 0.70 1.32 2.72 9.7 10.4 6.6 5.4 29.8 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 3 IPT2008-xxB IPT2008-xxB 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4