IPT20Q08-CEA

IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT20Q08-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. The IPT20Q08-xxA(Insulated version) series are isolated internally, they provided a 2500V RMS isolation voltage from all three termials to external heatsink. IPT20Q08-xxA MAIN FEATURES Symbol IT(RMS) VDRM / VRRM VTM Value 20 800 ≤ 1.65 Unit A V V TO-220A ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (360º conduction angle ) Tj = 25℃ Tj = 25℃ Tc = 90℃ t = 8.3ms t = 10ms Symbol Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t Repetitive F = 50Hz Non repetitive dI / dt IGM PG(AV) Value -40 to +150 -40 to +125 800 800 900 900 20 210 200 200 20 100 8 1 Unit ℃ V V A A A²s A/us A W Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing tp = 10ms Critical Rate of rise of on-state current Gate supply : IG = 500mA dIG/dt = 1A/us Peak gate current Average gate power dissipation tp = 20us, Tj = 125 ℃ Tj = 125 ℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPT20Q08-xxA ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) IPT20Q08-xxA Symbol IGT VGT VGD Test Condition Quadrant I – II – III IV ALL MAX MAX MIN TE SE 10 1.3 0.2 30 CE 25 50 Unit mA V V VD = 12V RL = 30Ω VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ IG = 1.2 IGT ALL I – III – IV 40 mA 80 35 200 mA V/us IL IH dV/dt MAX II 40 MAX MIN 25 40 8.5 MIN 3.0 IT = 100mA VD = 67% VDRM gate open Tj = 125 ℃ (dV/dt) c = 0.1V/us Tj = 125 ℃ (dI/dt)c (dV/dt) c = 10V/us Tj = 125 ℃ Without snubber Tj = 125 ℃ STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Test Conditions ITM = 28A, tp = 380uS VD = VDRM VR = VRRM Tj = 25 ℃ Tj = 25 ℃ Tj = 125 ℃ Value (MAX) 1.65 20 3 Unit V uA mA THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case (AC) Value 2.1 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPT20Q08-xxA PACKAGE MECHANICAL DATA TO-220A Millimeters Min A B C C2 C3 D E F G H L1 L2 L3 V 1.14 2.65 40º 4.4 0.61 0.46 1.23 2.4 8.6 9.8 6.2 4.8 28 3.75 1.7 2.95 Typ Max 4.6 0.88 0.70 1.32 2.72 9.7 10.4 6.6 5.4 29.8 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 3 IPT20Q08-xxA IPT20Q08-xxA 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4