IP Semiconductor Co., Ltd.
High current density due to double mesa technology; SIPOS and Glass Passivation. IPT20Q08-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. The IPT20Q08-xxA(Insulated version) series are isolated internally, they provided a 2500V RMS isolation voltage from all three termials to external heatsink.
IPT20Q08-xxA
MAIN FEATURES
Symbol
IT(RMS) VDRM / VRRM VTM
Value
20 800 ≤ 1.65
Unit
A V V
TO-220A
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (360º conduction angle ) Tj = 25℃ Tj = 25℃ Tc = 90℃ t = 8.3ms t = 10ms
Symbol
Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t Repetitive F = 50Hz Non repetitive dI / dt IGM PG(AV)
Value
-40 to +150 -40 to +125 800 800 900 900 20 210 200 200 20 100 8 1
Unit
℃ V V A A A²s A/us A W
Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing
tp = 10ms
Critical Rate of rise of on-state current Gate supply : IG = 500mA dIG/dt = 1A/us Peak gate current Average gate power dissipation
tp = 20us, Tj = 125 ℃
Tj = 125 ℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPT20Q08-xxA
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
IPT20Q08-xxA
Symbol
IGT VGT VGD
Test Condition
Quadrant
I – II – III IV ALL MAX MAX MIN
TE
SE 10 1.3 0.2 30
CE 25 50
Unit
mA V V
VD = 12V RL = 30Ω
VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ IG = 1.2 IGT
ALL I – III – IV
40 mA 80 35 200 mA V/us
IL IH dV/dt
MAX II 40 MAX MIN 25 40 8.5 MIN 3.0
IT = 100mA VD = 67% VDRM gate open Tj = 125 ℃ (dV/dt) c = 0.1V/us Tj = 125 ℃
(dI/dt)c
(dV/dt) c = 10V/us Tj = 125 ℃ Without snubber Tj = 125 ℃
STATIC CHARACTERISTICS
Symbol
VTM IDRM IRRM
Test Conditions
ITM = 28A, tp = 380uS VD = VDRM VR = VRRM Tj = 25 ℃ Tj = 25 ℃ Tj = 125 ℃
Value (MAX)
1.65 20 3
Unit
V uA mA
THERMAL RESISTANCES
Symbol
Rth (j – c)
Parameter
Junction to case (AC)
Value
2.1
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPT20Q08-xxA
PACKAGE MECHANICAL DATA
TO-220A
Millimeters Min
A B C C2 C3 D E F G H L1 L2 L3 V 1.14 2.65 40º 4.4 0.61 0.46 1.23 2.4 8.6 9.8 6.2 4.8 28 3.75 1.7 2.95
Typ
Max
4.6 0.88 0.70 1.32 2.72 9.7 10.4 6.6 5.4 29.8
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPT20Q08-xxA
IPT20Q08-xxA
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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