2N2907AUB

Surface Mount NP General Purpose Transistor 2N2907AUB (TX, TXV) Features: • Ceramic 3 pin surface mount package (UBN) • Miniature package to minimize circuit board area • Hermetically sealed • Footprint and pin-out matches SOT-23 package transistors • Processed per MIL-PRF-19500/291 Description: The 2N2907AUB, 2N2907AUBTX and 2N2907AUBTXV are miniature, hermetically sealed, ceramic surface mount general purpose switching transistors. The miniature three pin ceramic package is ideal for upgrading commercial grade circuits to military reliability levels where plastic SOT-23 devices have been used. The “UB” suffix denotes the 3 terminal chip carrier package, type “B” per MIL-PRF-19500/291. Typical screening and lot acceptance tests per MIL-PRF-19500/291. The burn-in condition is VCB = 30 V, PD = 200 mW, TA = 25°C, t = 80 hrs. Refer to MIL-PRF-19500/291 for complete requirements. In addition, the TX and TXV versions receive 100% thermal response testing. Applications: • • • • • General switching Amplification Signal processing Radio transmission Logic gates Pin General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc Function 1 Base 2 Emitter 3 Collector TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Issue D 08/2016 Page 1 Surface Mount PNP General Purpose Transistor 2N2907AUB (TX, TXV) Electrical Specifications Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Collector-Base Voltage 60V Collector-Emitter Voltage 60V Emitter-Base Voltage 5.0V Collector Current-Continuous 600mA Operating Junction Temperature (TJ) -65° C to +200 °C Storage Junction Temperature (Tstg) -65° C to +200° C Power Dissipation @ TA = 25°C 0.5 W Power Dissipation @ Tc = 25° C 1.00 W(1) Soldering Temperature (vapor phase reflow for 30 seconds) 215° C Soldering Temperature (heated collet for 5 seconds) 260° C Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS OFF CHARACTERISTICS V(BR)CBO Collector-Base Breakdown Voltage 60 - V IC = 10 µA, IE = 0 V(BR)CEO Collector-Emitter Breakdown Voltage 60 - V IC = 10 mA, IB = 0(2) V(BR)EBO Emitter-Base Breakdown Voltage 5.0 - V IE = 10 µA, IC = 0 10 µA VCB = 50 V, IE = 0 10 µA VCB = 50 V, IE = 0, TA = 150° C ICBO Collector-Base Cutoff Current IEBO Emitter-Base Cutoff Current 10 µA VCE = 4.0 V, IC = 0 ICES Collector Emitter Cutoff Current 10 nA VEB = 50 V ON CHARACTERISTICS 75 - VCE = 10 V, IC = 0.1 mA - VCE = 10 V, IC = 1.0 mA - VCE = 10 V, IC = 10 mA - VCE = 10 V, IC = 150 mA(2) 50 - VCE = 10 V, IC = 500 mA(2) 50 - VCE = 10 V, IC = 1.0 mA, TA = -55°C 100 hFE Forward-Current Transfer Ratio 450 100 100 300 Note: 1. Derate linearly 6.6 mW/°C above 25° C 2. Pulse Width ≤300 µs, Duty Cycle ≤ 2.0% General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Issue D 08/2016 Page 2 Surface Mount PNP General Purpose Transistor 2N2907AUB (TX, TXV) Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS 0.40 V IC = 150 mA, IB= 15 mA(2) 1.60 V IC = 500 mA, IB= 50 mA(2) 1.30 V IC = 150 mA, IB= 15 mA(2) 2.60 V IC = 500 mA, IB= 50 mA(2) ON CHARACTERISTICS VCE (SAT) VBE(SAT) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL-SIGNAL CHARACTERISTICS | hfe | Small Signal Forward Current Transfer Ratio 100 - VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz | hfe | Small Signal Forward Current Transfer Ratio 2.0 - VCE = 20 V, IC = 20 mA, f = 100 MHz Cobo Open Circuit Output Capacitance 8.0 pF VCB = 10 V, 100 kHz ≤ f ≤ 1.0 MHZ Cibo Input Capacitance (Output Open) 30 pF VEB = 2.0 V, 100 kHz ≤ f ≤ 1.0 MHZ SWITCHING CHARACTERISTICS ton Turn-On Time 45 ns VCC = 30 V, IC = 150 mA, IB1 = 15 mA toff Turn-Off Time 300 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA Note: 1. Derate linearly 6.6 mW/°C above 25° C 2. Pulse Width ≤300 µs, Duty Cycle ≤ 2.0% General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Issue D 08/2016 Page 3 Surface Mount PNP General Purpose Transistor 2N2907AUB (TX, TXV) Standard Packaging: Waffle Pack Note: 1. Derate linearly 6.6 mW/°C above 25° C 2. Pulse Width ≤300 µs, Duty Cycle ≤ 2.0% General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Issue D 08/2016 Page 4